Fabrication and spintronic application of spin gapless semiconductors
Project/Area Number |
15K13335
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Research Category |
Grant-in-Aid for Challenging Exploratory Research
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Allocation Type | Multi-year Fund |
Research Field |
Applied materials
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Research Institution | Nagoya University |
Principal Investigator |
Ueda Kenji 名古屋大学, 工学研究科, 准教授 (10393737)
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Project Period (FY) |
2015-04-01 – 2017-03-31
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Project Status |
Completed (Fiscal Year 2016)
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Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2015: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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Keywords | スピンギャップレス半導体 / ホイスラー / Mn2CoAl / ホイスラー合金 / 移動度 / 異常ホール効果 |
Outline of Final Research Achievements |
In this study, we have tried fabricating spin gapless semiconductors (SGS), which have fully spin polarized and high mobility carriers, and finding the way for use SGS as novel spintronic devices. We found that Mn2CoAl (MCA) is the most promising candidate of SGS, and high quality films of MCA can be obtained by ion-beam assisted sputtering. We also showed that MCA is promising as a novel spin source of both spin-polarized electrons and holes.
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Report
(3 results)
Research Products
(19 results)
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[Journal Article] Magnetization reversal of the domain structure in the anti-perovskite nitride Co3FeN investigated by high-resolution X-ray microscopy2016
Author(s)
T. Hajiri, S. Finizio, M. Vafaee, Y. Kuroki, H. Ando, H. Sakakibara, A. Kleibert, L. Howald, F. Kronast, K. Ueda, H. Asano, and M. Klaui
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Journal Title
J. Appl. Phys. 119
Volume: 119
Issue: 18
DOI
Related Report
Peer Reviewed / Int'l Joint Research
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