Mid-infrared exciton control based on low-dimensional image charge effects in narrow-gap semiconductors
Project/Area Number |
15K13348
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Research Category |
Grant-in-Aid for Challenging Exploratory Research
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Allocation Type | Multi-year Fund |
Research Field |
Crystal engineering
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Research Institution | Japan Advanced Institute of Science and Technology |
Principal Investigator |
Suzuki Toshi-kazu 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 教授 (80362028)
|
Project Period (FY) |
2015-04-01 – 2018-03-31
|
Project Status |
Completed (Fiscal Year 2017)
|
Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2017: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
|
Keywords | 狭ギャップ半導体 / 低次元系 / クーロン相互作用 / 固定電荷 / 混合酸化物 / InAs / 異種材料融合技術 / 低次元電子 / 低周波ノイズ |
Outline of Final Research Achievements |
We fabricated and investigated InAs/low-k structures, where high-quality InAs thin films are bonded on host low-dielectric-constant (low-k) flexible substrates. From low-frequency noise measurements of the InAs/low-k, we found that the relevant length of Coulomb interaction is ~ 20 nm for electrons in the InAs. We also fabricated and investigated InAs/high-k/low-k structures, where high-k insulator layers are inserted between the InAs and the low-k. As a result, it is found that the InAs/high-k/low-k can suppress interface fluctuation scattering of electrons, whereas Coulomb scattering is enhanced by unintentional interface fixed charges.
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Report
(4 results)
Research Products
(11 results)