Mid-infrared exciton control based on low-dimensional image charge effects in narrow-gap semiconductors

• Project/Area Number: 15K13348
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Crystal engineering
• Research Institution: Japan Advanced Institute of Science and Technology
• Principal Investigator: Suzuki Toshi-kazu 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 教授 (80362028)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Project Status: Completed (Fiscal Year 2017)
• Budget Amount: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000); Fiscal Year 2017: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
• Keywords: 狭ギャップ半導体 / 低次元系 / クーロン相互作用 / 固定電荷 / 混合酸化物 / InAs / 異種材料融合技術 / 低次元電子 / 低周波ノイズ

Outline of Final Research Achievements

We fabricated and investigated InAs/low-k structures, where high-quality InAs thin films are bonded on host low-dielectric-constant (low-k) flexible substrates. From low-frequency noise measurements of the InAs/low-k, we found that the relevant length of Coulomb interaction is ~ 20 nm for electrons in the InAs. We also fabricated and investigated InAs/high-k/low-k structures, where high-k insulator layers are inserted between the InAs and the low-k. As a result, it is found that the InAs/high-k/low-k can suppress interface fluctuation scattering of electrons, whereas Coulomb scattering is enhanced by unintentional interface fixed charges.

Research Products

• [Journal Article] Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics (2018)
  • Author(s): S. P. Le, D. D. Nguyen, and T. Suzuki
  • Journal Title: Journal of Applied Physics Volume: 123 Issue: 3 Pages: 034504-034504
  • DOI: 10.1063/1.5017668
  • Peer Reviewed
• [Journal Article] An InAs/high-k/low-k structure: electron transport and interface analysis (2017)
  • Author(s): T. Ui, R. Mori, S. P. Le, Y. Oshima, and T. Suzuki.
  • Journal Title: AIP Advances Volume: 7 Issue: 5 Pages: 055303-055303
  • DOI: 10.1063/1.4983176
  • NAID: 120006584033
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors (2016)
  • Author(s): S. P. Le, T. Ui, T. Q. Nguyen, H.-A. Shih, and T. Suzuki
  • Journal Title: Journal of Applied Physics Volume: 119 Issue: 20
  • DOI: 10.1063/1.4952386
  • NAID: 120006584035
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Low-frequency noise in InAs films bonded on low-k flexible substrates (2015)
  • Author(s): S. P. Le, T. Ui, and T. Suzuki
  • Journal Title: Applied Physics Letters Volume: 107 Issue: 19
  • DOI: 10.1063/1.4935458
  • NAID: 120006510328
  • Peer Reviewed / Acknowledgement Compliant
• [Presentation] ダブルリセス構造を有するノーマリオフ型AlGaN-GaN MOSFETのDIBL特性 (2018)
  • Author(s): 佐藤拓, 瓜生和也, 岡安潤一, 君島正幸, 鈴木寿一
  • Organizer: 電気学会電子デバイス研究会
  • Invited
• [Presentation] Threshold voltages of Al2O3/AlGaN/GaN and AlTiO/AlGaN/GaN metal-insulator-semiconductor devices (2017)
  • Author(s): S. P. Le, D. D. Nguyen, and T. Suzuki
  • Organizer: 49th International Conference on Solid State Devices and Materials
  • Int'l Joint Research
• [Presentation] Drain-induced barrier lowering in normally-off AlGaN-GaN MOSFETs with single- or double-recess overlapped gate (2017)
  • Author(s): T. Sato, K. Uryu, J. Okayasu, M. Kimishima, and T. Suzuki
  • Organizer: 49th International Conference on Solid State Devices and Materials
  • Int'l Joint Research
• [Presentation] Fabrication and characterization of InAs/high-k/low-k structures (2016)
  • Author(s): T. Ui, R. Mori, S. P. Le, Y. Oshima, and T. Suzuki
  • Organizer: 48th Int. Conf. on Solid State Devices and Materials
  • Place of Presentation: Tsukuba International Congress Center (茨城県つくば市)
  • Year and Date: 2016-09-26
  • Int'l Joint Research
• [Presentation] Low-frequency noise exponents in InAs thin films on flexible or GaAs(001) substrates (2016)
  • Author(s): S. P. Le, T. Ui, and T. Suzuki
  • Organizer: 43rd International Symposium on Compound Semiconductors
  • Place of Presentation: Toyama International Conference Center (富山県富山市)
  • Year and Date: 2016-06-26
  • Int'l Joint Research
• [Presentation] Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors (2015)
  • Author(s): S. P. Le, T. Ui, T. Q. Nguyen, H.-A. Shih, and T. Suzuki
  • Organizer: 47th Int. Conf. on Solid State Devices and Materials
  • Place of Presentation: Sapporo Convention Center (北海道札幌市)
  • Year and Date: 2015-09-28
  • Int'l Joint Research
• [Presentation] Fabrication and characterization of AlTiO/InAlN/AlN/GaN metal-Insulator-semiconductor field-effect transistor (2015)
  • Author(s): S. Yamaguchi, T. Ui, J. Liang, H.-A. Shih, and T. Suzuki
  • Organizer: 47th Int. Conf. on Solid State Devices and Materials
  • Place of Presentation: Sapporo Convention Center (北海道札幌市)
  • Year and Date: 2015-09-28
  • Int'l Joint Research