| Project/Area Number |
15K13350
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Crystal engineering
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| Research Institution | Kyoto University |
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Principal Investigator |
Fujita Shizuo 京都大学, 工学研究科, 教授 (20135536)
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| Co-Investigator(Renkei-kenkyūsha) |
KANEKO Kentaro 京都大学, 工学研究科, 助教 (50643061)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2015: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | 酸化物半導体 / 伝導性制御 / 酸化還元反応 / 酸化スズ / 酸化ガリウム |
|---|
| Outline of Final Research Achievements |
In order for controlling p/n conduction types and carrier concentrations in oxide semiconductors, efforts were given to produce reduction reactions in parallel with oxidation processes. By adding reducing agents such as ammonia and glucose in source solutions or applying reducible growth conditions in mist CVD, we aimed at forming acceptors in oxide semiconductors for which p-type conductivity has been limited. Successful growth of p-type tin oxide as well as formation of acceptors in indium oxide and gallium oxide encourages future evolution of the current technology for device applications.
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