| Project/Area Number |
15K13353
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
末光 眞希 東北大学, 電気通信研究所, 教授 (00134057)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2016: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | グラフェン / 結晶成長 / 電界効果トランジスタ / 接合 / トランジスタ / 高品質SiC単結晶薄膜 |
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| Outline of Final Research Achievements |
Excellent physical properties of graphene enables to realize transistors operating at terahertz frequencies. I have succeeded in growing high-quality graphene on substrates suitable for device application by using fabrication method of singlecrystalline SiC thin film that was separated from SiC single bulk crystal and bonded with the subtrates suitable for device applications.Graphene thus formed exhibits a linearity of band dispersions and high carrier mobility. Furthermore, I have succeeded in fabricating transistors using graphene thus formed, and showed that it is suitable for high-speed electronic device applications.
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