| Project/Area Number |
15K13355
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | University of Tsukuba |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
KITA Eiji 筑波大学, 数理物質系, 教授 (80134203)
ITOH Hiroyoshi 関西大学, 理工学部, 教授 (00293671)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2015: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | 二次元界面伝導 / スパッタリング法 / 層状成長 / RHEED / 界面伝導 / 平坦化 |
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| Outline of Final Research Achievements |
In order to realize a high-quality interface of MFe2O4/SrTiO3(001), we carefully investigated the fabrication conditions of the hetero-interface of γ-Al2O3 / SrTiO3 (001) as the first step. We grew the γ-Al2O3 / SrTiO3 (001) structures by a reactive molecular beam epitaxy technique introducing different oxidizing agents with different oxidation ability. The oxygen deficiency at the interface seems to be a primary factor for the electric conduction, carrier densities and impurity scattering of γ-Al2O3 / SrTiO3 (001) interfaces.
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