| Project/Area Number |
15K13499
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Condensed matter physics I
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
Hidetoshi Miyazaki 名古屋工業大学, 工学(系)研究科(研究院), 准教授 (10548960)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | トポロジカル絶縁体 / サマリウム酸化物 / 薄膜 / 分子線エピタキシー法 / Sm酸化物 / エピタキシャル成長 / 電子状態 |
|---|
| Outline of Final Research Achievements |
Topological insulators are materials which exhibit a fundamentally new physical phenomena that were first predicted by theorists. Recently, SmO is predicted to have a topological nontrivial ground state at ambient pressure.
In this study, we succeeded to fabricate SmO thin films by molecular beam epitaxy method controlled precisely adjusting the substrate temperature and oxygen partial pressure.
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