Development of tunnel transistor with molecular superlattice
Project/Area Number |
15K13819
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Research Category |
Grant-in-Aid for Challenging Exploratory Research
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Allocation Type | Multi-year Fund |
Research Field |
Device related chemistry
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Research Institution | National Institute for Materials Science |
Principal Investigator |
Wakayama Yutaka 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, グループリーダー (00354332)
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Project Period (FY) |
2015-04-01 – 2017-03-31
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Project Status |
Completed (Fiscal Year 2016)
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Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2015: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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Keywords | トンネル現象 / 分子自己組織化膜 / 縦型トンネルトランジスタ / 自己組織化分子膜 / 縦型トランジスタ / 半導体デバイス / トンネルトランジスタ |
Outline of Final Research Achievements |
A main purpose of this study is to develop a vertical tunnel transistor. Key component of this device is binary molecular monolayers, which were incorporated in a double-tunneling junction to work as quantum dots for electron tunneling. An advantage of organic molecules is that energy levels of molecules can be tuned precisely by designing molecular structures. In fact, we observed multi-step tunneling in accordance with the energy levels of respective molecules. Furthermore, electron-tunneling can be modulated under side-gate bias voltages. Thus, vertically-aligned tunneling transistor with multi-value switching operation were successfully developed by using organic molecules.
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Report
(3 results)
Research Products
(12 results)
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[Journal Article] Substrate-independent growth of atomically precise chiral graphene nanoribbons2016
Author(s)
Dimas G. de Oteyza, Aran Garcia-Lekue, Manuel Vilas-Varela, Nestor Merino, Eduard Carbonell-Sanroma, Martina Corso, Guillaume Vasseur, Mikel Abadia, Celia Rogero, Dolores Perez, Enrique Guitian, J. Ignacio Pascual, J. Enrique Ortega, Yutaka Wakayama, Diego Pena
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Journal Title
ACS Nano
Volume: 10
Issue: 9
Pages: 9000-9008
DOI
Related Report
Peer Reviewed / Int'l Joint Research
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[Patent(Industrial Property Rights)] 半導体装置2016
Inventor(s)
若山裕、小橋和義、早川竜馬、知京豊裕
Industrial Property Rights Holder
国立研究開発法人物質・材料研究機構
Industrial Property Rights Type
特許
Industrial Property Number
2016-167281
Filing Date
2016-08-29
Related Report