• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Pulse power application of SiC power devices with ultra-low loss and high switching speed

Research Project

Project/Area Number 15K13927
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Power engineering/Power conversion/Electric machinery
Research InstitutionUniversity of Yamanashi

Principal Investigator

YANO Koji  山梨大学, 大学院総合研究部, 教授 (90252014)

Co-Investigator(Kenkyū-buntansha) 山本 真幸  山梨大学, 大学院総合研究部, 助教 (00511320)
Co-Investigator(Renkei-kenkyūsha) TANAKA Yasunori  産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 総括研究主幹 (20357453)
YATSUO Tsutomu  産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 非常勤研究員 (10399503)
Project Period (FY) 2015-04-01 – 2018-03-31
Project Status Completed (Fiscal Year 2017)
Budget Amount *help
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2017: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2016: ¥390,000 (Direct Cost: ¥300,000、Indirect Cost: ¥90,000)
Fiscal Year 2015: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Keywordsパワーデバイス / パルスパワー / SiC / ワイドバンドギャップ / 静電誘導トランジスタ / 高速半導体スイッチ
Outline of Final Research Achievements

The SiC-buried gate static induction transistor (SiC-BGSIT) was investigated for a switching device in a pulse power generator, and then device simulations made clear its electrical properties in an inductive energy storage circuit as a result of an optimum design of the BGSIT structure. It was made clear than the power loss per pulse can be reduced by 75% when the loss of the SiC-BGSIT is compared with that of the Si-static induction thyristor (SIThy). This effect can successfully contribute to the reduction of the size of the pulse generator.
In order to improve the performance of the SIC-BGSIT, the SiC screen grid vertical JFET, in which the screed grid regions are introduced underneath the buried p+ gate stripes of the BGSIT, was proposed. It was experimentally demonstrated that 3A-1,2kV SGVJFETs have a fall time less than 50ns during the turnoff period.This result suggests that the SGVJFET structure enhances the dV/dt in the voltage pulse.

Report

(4 results)
  • 2017 Annual Research Report   Final Research Report ( PDF )
  • 2016 Research-status Report
  • 2015 Research-status Report
  • Research Products

    (4 results)

All 2017 Other

All Presentation (1 results) (of which Int'l Joint Research: 1 results) Remarks (3 results)

  • [Presentation] A novel gate drive circuit for high speed turn-on switching of ultra-low feedback capacitance SiC-VJFET2017

    • Author(s)
      N. Kikuchi, T. Ishikawa, Y. Tanaka, K. Yano
    • Organizer
      Proceedings of International conference on Eeectrical machines and systems (ICEMS)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Remarks] 山梨大学研究者総覧

    • URL

      http://nerdb-re.yamanashi.ac.jp/Profiles/336/0033565/profile.html

    • Related Report
      2017 Annual Research Report
  • [Remarks] 山梨大学研究者総覧

    • URL

      http://nerdb-re.yamanashi.ac.jp/Profiles/334/0033325/profile.html

    • Related Report
      2016 Research-status Report
  • [Remarks] 産総研先進パワーエレクトロニクス研究センターHP(BGSIT)

    • URL

      https://unit.aist.go.jp/adperc/ci/teams/s-pdt.html#tanaka

    • Related Report
      2015 Research-status Report

URL: 

Published: 2015-04-16   Modified: 2019-03-29  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi