| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Outline of Final Research Achievements |
In this study, we aimed to fabricate artificial heterovalent interfaces of wide-band-gap semiconductors for high-efficiency solar cells. First, we investigated electrical properties of nitride semiconductors grown on oxide materials. We found that high-quality InGaN films are grown on yttria-stabilized zirconia substrates below 480 °C. We also found that the electrical properties of the InGaN films strongly depended on the In composition. Next, we investigated the structural and electrical characteristics of oxynitride semiconductors, which would modify electrical properties of the heterovalent interfaces of nitride and oxide semiconductors.
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