Instantaneous separation of carriers using heterovalent interfaces of wide-band-gap semiconductors
| Project/Area Number |
15K13939
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | 窒化物半導体 / 酸化物半導体 |
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| Outline of Final Research Achievements |
In this study, we aimed to fabricate artificial heterovalent interfaces of wide-band-gap semiconductors for high-efficiency solar cells. First, we investigated electrical properties of nitride semiconductors grown on oxide materials. We found that high-quality InGaN films are grown on yttria-stabilized zirconia substrates below 480 °C. We also found that the electrical properties of the InGaN films strongly depended on the In composition. Next, we investigated the structural and electrical characteristics of oxynitride semiconductors, which would modify electrical properties of the heterovalent interfaces of nitride and oxide semiconductors.
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Report
(3 results)
Research Products
(7 results)
