| Project/Area Number |
15K13941
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
Akira Toriumi 東京大学, 大学院工学系研究科(工学部), 教授 (50323530)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 遷移金属カルコゲナイド / MoS2 / 原子層 / ランダムテレグラフィックシグナルズ / 2次元材料 |
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| Outline of Final Research Achievements |
We fabricated MoS2 FETs, in which MoS2 were mechanically exfoliated on SiO2/Si. We paid attention to the random telegraphic signals (RTSs) observed in mono-layer MoS2 FETs rather the PN junction formation, because a single defect may significantly affect the electron transport in the mono-layer. RTSs showing a defect-defect interaction were also observed and analyzed. Furthermore, intentionally prepared defects were also analyzed by RTS analysis. To our knowledge, the RTS observation in transition-metal dichalcogenides is the world-first report, and will become one of the research directions in this field.
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