| Project/Area Number |
15K13943
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nagoya University |
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Principal Investigator |
Ohta Akio 名古屋大学, 工学研究科, 特任助教 (10553620)
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| Co-Investigator(Kenkyū-buntansha) |
黒澤 昌志 名古屋大学, 工学研究科, 講師 (40715439)
洗平 昌晃 名古屋大学, 未来材料・システム研究所, 助教 (20537427)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | 二次元結晶 / 電子状態 / 結晶成長 / IV族半導体 / シリコン / ゲルマニウム / シリセン |
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| Outline of Final Research Achievements |
We have studied a new growth technique of Si- or Ge-based two-dimentional crystal. An epitaxial Ag(111) layer was grown on Si(111) (or Ge(111)) substrate, and a segregation of Si (or Ge) on the epitaxial Ag(111) by the annealing in nitrogen ambience was found to be detected. In addition, the amount of the segregated Si (or Ge) could be controlled by the annealing condition such as time and temperature. As a highlight, a periodic structure of bi-layer Ge atom corresponding to a two-dimensional crystal on the atomically flat Ag surface were clearly observed from the high resolution cross section TEM image of the Ag/Ge structure after the annealing at 450 degree.
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