Sublattice reversal epitaxy on high-index substrates for semiconductor coupled multilayer cavity
| Project/Area Number |
15K13956
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokushima |
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Principal Investigator |
Kitada Takahiro 徳島大学, 大学院理工学研究部(連携), 特任教授 (90283738)
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| Co-Investigator(Kenkyū-buntansha) |
井須 俊郎 徳島大学, 大学院ソシオテクノサイエンス研究部, 特任教授 (00379546)
熊谷 直人 国立研究開発法人産業技術総合研究所, 電子光技術研究部門, 主任研究員 (40732152)
盧 翔孟 徳島大学, 大学院理工学研究部(連携), 特任助教 (80708800)
南 康夫 徳島大学, 大学院理工学研究部(連携), 特任准教授 (60578368)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2015: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | 電子・電気材料 / 薄膜・量子構造 / 半導体非線形光学材料 / 微小光共振器 / テラヘルツ波発生 |
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| Outline of Final Research Achievements |
Sublattice reversal in III-V compound semiconductors was successfully demonstrated by GaAs/Ge/GaAs system grown on high-index (113)B GaAs substrates by molecular beam epitaxy. A thin layer of Ge was introduced as a group IV material to realize sublattice reversal epitaxy of GaAs on the (113)B substrate. Using the sublattice reversal by the GaAs/Ge/GaAs on (113)B, we also successfully grew a unique coupled cavity structure comprising of two GaAs cavity layers and three GaAs/AlAs distributed Bragg reflector multilayers, in which the second-order nonlinear susceptibility of the top side cavity is inverted from that of the bottom side cavity. Novel terahertz emitting devices with good performance are expected by the inverted coupled cavity structure based on the sublattice reversal technology on high-index substrates.
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Report
(3 results)
Research Products
(3 results)
