Establishment of carrier controlled semiconducting diamond by high-pressure and high-temperature technique
| Project/Area Number |
15K13957
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Ehime University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
松下 正史 愛媛大学, 理工学研究科(工学系), 准教授 (90432799)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | ダイヤモンド / 高温・高圧合成 / ドーピング / 電子材料 / イオン注入 / ナノ構造 / ナノ多結晶 / 半導体 / 不純物 / ナノ多結晶ダイヤモンド / 導電性 / 光物性 |
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| Outline of Final Research Achievements |
For the future application of electronic materials, we investigates the conductivity of nano-polycrystalline diamond synthesized by high-pressure and high-temperature technique. Also to control its conductivity, we tried impurity doping on the diamond. We observed semiconducting conductivity for the nano-polycrystalline diamond at temperatures higher than 400 degree C. Also, optical characteristics were investigated on that. When nano-polycrystalline diamond was synthesized with InP, it seemed to be introduced into the crystal. We prepared single crystalline diamond and put P ion implantation on its surface. After applying high pressure and high temperature for the diamond, unexpected pyramidal microstructure was formed on the surface.
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Report
(4 results)
Research Products
(13 results)
