Anion-controlled nitride-based semiconductor alloys towards laser diodes in unexploited wavelength regions

• Project/Area Number: 15K13959
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Meijo University
• Principal Investigator: Takeuchi Tetsuya 名城大学, 理工学部, 教授 (10583817)
• Co-Investigator(Kenkyū-buntansha): 宮嶋 孝夫 名城大学, 理工学部, 教授 (50734836)
• Project Period (FY): 2015-04-01 – 2017-03-31
• Project Status: Completed (Fiscal Year 2016)
• Budget Amount: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2015: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
• Keywords: 価電子帯制御 / 窒化物半導体 / アンチモン / 正孔 / トンネル接合 / 低温成長 / サーファクタント効果

Outline of Final Research Achievements

In this study, we attempted to create GaNSb, an anion-controlled nitride alloy, towards high hole concentration and low resistive p-type nitride semiconductors by increasing an energy level of valence band maxima. We obtained up to 1% Sb content in GaNSb and smooth GaNSb surfaces even grown at low temperature, 800 oC. However, it is found that Sb resulted in poor PL intensity of GaInN QWs, then we have decided not to use Sb source in the MOVPE reactor. Instead, we have obtained low temperature p-side structures by using tunnel junctions and low temperature grown n-GaN, showing a reasonable device resistance.

Research Products

• [Journal Article] GaInN-based tunnel junctions with graded layers (2016)
  • Author(s): Daiki Takasuga, Yasuto Akatsuka, Masataka Ino, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
  • Journal Title: Applied Physics Express Volume: 9 Issue: 8 Pages: 081005-081005
  • DOI: 10.7567/apex.9.081005
  • NAID: 210000138004
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] GaNSb alloys grown with H2 and N2 carrier gases (2016)
  • Author(s): Daisuke Komori, Kaku Takarabe, Tetsuya Takeuchi, Takao Miyajima, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
  • Journal Title: Jpn. J. Appl. Phys. Volume: 55 Issue: 5S Pages: 05FD01-05FD01
  • DOI: 10.7567/jjap.55.05fd01
  • Peer Reviewed / Acknowledgement Compliant
• [Presentation] Low-temperature-grown p-side structure with tunnel junction towards long wavelength nitride-based LED (2017)
  • Author(s): J. Yoshinaga, K. Suzuki, D. Takasuka, N. Koide, T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasaki
  • Organizer: LEDIA’17
  • Place of Presentation: Yokohama, Japan
  • Int'l Joint Research
• [Presentation] GaInNトンネル接合とn型GaNSbによる低温p側構造の作製 (2016)
  • Author(s): 鈴木 健太, 財部 覚, 小森 大資, 高須賀 大貴, 小出 典克、竹内 哲也, 岩谷 素顕, 上山 智,赤﨑 勇
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京
  • Year and Date: 2016-03-19
• [Presentation] GaInN トンネル接合と n 型 GaNSb による低温 p 側構造の作製 (2016)
  • Author(s): 鈴木 健太、財部 覚、高須賀 大貴、小出 典克、 竹内 哲也、岩谷 素顕、上山 智、赤﨑 勇
  • Organizer: 第8回窒化物半導体結晶成長講演会
  • Place of Presentation: 京都
• [Presentation] Low-temperature grown p-side structure with GaInN tunnel junction and n-GaNSb (2016)
  • Author(s): K. Suzuki, K. Takarabe, D. Komori, D. Takasuka, N. Koide, T. Takeuchi, M. Iwaya, S. Kamiyama and I. Akasaki
  • Organizer: LEDIA'16
  • Place of Presentation: Yokphama, Japan
  • Int'l Joint Research
• [Presentation] 高速成長（0.43 μm/h）させたGaInN量子井戸の弱・強励起PL評価 (2016)
  • Author(s): 市川 竜弥、高須賀 大貴、財部 覚、竹内 哲也、上山 智、岩谷素顕、赤﨑 勇
  • Organizer: 第5回 結晶工学未来塾
  • Place of Presentation: 東京
• [Presentation] GaNSb におけるGaSb モル分率のキャリアガス依存性 (2015)
  • Author(s): 小森 大資, 財部 覚, 鈴木 健太, 竹内 哲也, 上山 智, 岩谷 素顕, 宮嶋 孝夫, 小出 典克,赤﨑 勇
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋
  • Year and Date: 2015-09-13
• [Presentation] MOVPE Growth of AlNSb Alloys (2015)
  • Author(s): K. Suzuki, D. Komori, H. Sasajima, K. Takarabe, T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
  • Organizer: The 3rd International Confenerce on Light-Emitting Devices and thier Induatrial Applications
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 2015-04-22
  • Int'l Joint Research
• [Presentation] Carrier Gas Dependence on GaNSb MOVPE Growth (2015)
  • Author(s): D. Komori, H. Sasajima, K. Takarabe, K. Suzuki, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
  • Organizer: The 3rd International Confenerce on Light-Emitting Devices and thier Induatrial Applications
  • Place of Presentation: Yoohama, Japan
  • Year and Date: 2015-04-22
  • Int'l Joint Research
• [Patent(Industrial Property Rights)] 窒化物半導体発光素子及びその製造方法 (2015)
  • Inventor(s): 竹内哲也、小森大資、財部覚、岩谷素顕、赤崎勇
  • Industrial Property Rights Holder: 竹内哲也、小森大資、財部覚、岩谷素顕、赤崎勇
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2015-084802
  • Filing Date: 2015-04-17