| Project/Area Number |
15K13959
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Meijo University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
宮嶋 孝夫 名城大学, 理工学部, 教授 (50734836)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 価電子帯制御 / 窒化物半導体 / アンチモン / 正孔 / トンネル接合 / 低温成長 / サーファクタント効果 |
|---|
| Outline of Final Research Achievements |
In this study, we attempted to create GaNSb, an anion-controlled nitride alloy, towards high hole concentration and low resistive p-type nitride semiconductors by increasing an energy level of valence band maxima. We obtained up to 1% Sb content in GaNSb and smooth GaNSb surfaces even grown at low temperature, 800 oC. However, it is found that Sb resulted in poor PL intensity of GaInN QWs, then we have decided not to use Sb source in the MOVPE reactor. Instead, we have obtained low temperature p-side structures by using tunnel junctions and low temperature grown n-GaN, showing a reasonable device resistance.
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