| Project/Area Number |
15K13967
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
Masaharu Kobayashi 東京大学, 生産技術研究所, 准教授 (40740147)
Takuya Saraya 東京大学, 生産技術研究所, 助手 (90334367)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 半導体物性 / 大規模集積回路 / MOSFET / ナノワイヤトランジスタ / しきい値電圧自己調整 / MOSトランジスタ / 規模集積回路 |
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| Outline of Final Research Achievements |
In this study, silicon nanowire transistor with threshold voltage (Vth) self-adjusting mechanism was designed and fabricated in order to realize ultra-low voltage operating transistors. In this mechanism, Vth decreases at the ON-state and Vth increases at the OFF-state, resulting in ultra-low voltage operation. The width of the fabricated nanowire transistor was as small as 38nm. It was confirmed that the fabricated nanowire transistor has the Vth self-adjusting mechanism at supply voltage as low as 0.1V.
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