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Development of sensitive charge-pumping spin-resonance method and its application to spin control in electron-pair recombination process

Research Project

Project/Area Number 15K13970
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Electron device/Electronic equipment
Research InstitutionShizuoka University (2016)
University of Toyama (2015)

Principal Investigator

ONO YUKINORI  静岡大学, 電子工学研究所, 教授 (80374073)

Co-Investigator(Kenkyū-buntansha) 土屋 敏章  島根大学, 総合理工学研究科, 教授 (20304248)
堀 匡寛  静岡大学, 電子工学研究所, 講師 (50643269)
Project Period (FY) 2015-04-01 – 2017-03-31
Project Status Completed (Fiscal Year 2016)
Budget Amount *help
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2016: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2015: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Keywordsチャージポンピング / 電子スピン共鳴 / シリコン酸化膜界面
Outline of Final Research Achievements

We developed the charge-pumping (CP) electrically detected magnetic resonance (EDMR), and improved its sensitivity. Owing to the improved sensitivity, we successfully performed the CP-EDMR experiments on silicon MOS transistors. The current sensitivity is as low as 103 spins and it is expected that single spin detection is possible by higher frequency (GHz range) operations. We also demonstrated that the energy spectroscopy can be performed by the CP-EDMR.
These results indicated that the developed CP-EDMR allows us to investigate the spin correlation during the CP process.

Report

(3 results)
  • 2016 Annual Research Report   Final Research Report ( PDF )
  • 2015 Research-status Report
  • Research Products

    (30 results)

All 2017 2016 2015 Other

All Journal Article (8 results) (of which Int'l Joint Research: 1 results,  Peer Reviewed: 8 results,  Acknowledgement Compliant: 5 results) Presentation (21 results) (of which Int'l Joint Research: 13 results,  Invited: 6 results) Remarks (1 results)

  • [Journal Article] Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors2017

    • Author(s)
      A.Samanta, M.Muruganathan, M.Hori, Y.Ono, H.Mizuta, M.Tabe, D.Moraru
    • Journal Title

      Appl.Phys.Lett.

      Volume: 110 Issue: 9

    • DOI

      10.1063/1.4977836

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Improvement of charge-pumping electrically detected magnetic resonance and its application to silicon metal-oxide-semiconductor field-effect transistor2017

    • Author(s)
      M.Hori, T.Tsuchiya, Y.Ono
    • Journal Title

      Appl. Phys. Express

      Volume: 10 Issue: 1 Pages: 015701-015701

    • DOI

      10.7567/apex.10.015701

    • NAID

      210000135738

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Time-domain charge pumping on silicon-on-indulator MOS devices2017

    • Author(s)
      T.Watanabe, M.Hori, T.Tsuchiya, A.Fujiwara, Y.Ono
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 56 Issue: 1 Pages: 011303-011303

    • DOI

      10.7567/jjap.56.011303

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed
  • [Journal Article] EDMR on Recombination Process in Silicon MOSFET at Room Temperature2017

    • Author(s)
      M. Hori, Y. Ono
    • Journal Title

      Springer Series Advances in Intelligent Systems and Computing, Recent Global Research and Education :Technological Challenges

      Volume: 519 Pages: 89-93

    • DOI

      10.1007/978-3-319-46490-9_13

    • ISBN
      9783319464893, 9783319464909
    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Manipulation of Single Charges Using Dopant Atoms in Silicon - Interplay with Intervalley Phonon Emission2017

    • Author(s)
      Y. Ono, M. Hori, G. P. Lansbergen, A. Fujiwara
    • Journal Title

      Springer Series Advances in Intelligent Systems and Computing, Recent Global Research and Education :Technological Challenges

      Volume: 519 Pages: 137-141

    • DOI

      10.1007/978-3-319-46490-9_20

    • ISBN
      9783319464893, 9783319464909
    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Fabrication and single-electron-transfer operation of a triple-dot single-electron transistor2015

    • Author(s)
      M. Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi
    • Journal Title

      J. Appl. Phys.

      Volume: 118 Issue: 21

    • DOI

      10.1063/1.4936790

    • Related Report
      2015 Research-status Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Electrical activation and electron spin resonance measurements of arsenic implanted in silicon2015

    • Author(s)
      M. Hori, M. Uematsu, A. Fujiwara, Y. Ono
    • Journal Title

      Applied Physics Letters

      Volume: 106 Issue: 14

    • DOI

      10.1063/1.4917295

    • Related Report
      2015 Research-status Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Evaluation of Accuracy of Charge Pumping Current in Time Domain2015

    • Author(s)
      T. Watanabe, M. Hori, T. Tsuchiya, Y. Ono
    • Journal Title

      IEICE Transactions on Electronics

      Volume: E98.C Issue: 5 Pages: 390-394

    • DOI

      10.1587/transele.E98.C.390

    • NAID

      130005067742

    • ISSN
      0916-8524, 1745-1353
    • Related Report
      2015 Research-status Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Presentation] SOI MOS p-i-nダイオードの低温チャージポンピング2017

    • Author(s)
      渡邉時暢, 堀匡寛, 小野行徳
    • Organizer
      電子情報通信学会研究会
    • Place of Presentation
      北海道大学(北海道・札幌市)
    • Related Report
      2016 Annual Research Report
  • [Presentation] Study of Electron Localization Effects in Donor-Acceptor Pairs in Low-Dimensional Si Tunnel Diodes2017

    • Author(s)
      Prabhudesai Gaurang, Anh Le The, Shibuya Mitsuki, Manoharan Muruganathan, Hori Masahiro, Ono Yukinori, Mizuta Hiroshi, Tabe Michiharu, Moraru Daniel
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Related Report
      2016 Annual Research Report
  • [Presentation] Study of Stability of A-few-donor Quantum Dots with Different Configurations for Room-Temperature Single-Electron Tunneling Operation2017

    • Author(s)
      Hasan KM Tarik, Samanta Arup, Affiff Adnan, Anh Le The, Manoharan Muruganathan, Hori Masahiro, Ono Yukinori ,Mizuta Hiroshi,Tabe Michiharu, Moraru Daniel
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Related Report
      2016 Annual Research Report
  • [Presentation] Silicon-on-insulator MOS デバイスにおける実時間チャージポンピングの応用2017

    • Author(s)
      渡邉 時暢, 堀 匡寛, 土屋 敏章, 藤原 聡, 小野 行徳
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Related Report
      2016 Annual Research Report
  • [Presentation] シリコンにおけるチャージポンプー電荷とスピンの室温極限操作に向けてー2017

    • Author(s)
      小野 行徳, 堀匡寛, 土屋敏章
    • Organizer
      第29回シリサイド系半導体研究会
    • Place of Presentation
      八洲学園大学(神奈川県・横浜市)
    • Related Report
      2016 Annual Research Report
    • Invited
  • [Presentation] Charge pumping EDMR for MOS interface analysis2016

    • Author(s)
      M.Hori,Y.Ono
    • Organizer
      The 18th Takayanagi Kenjiro Memorial Symposium
    • Place of Presentation
      静岡大学(静岡県・浜松市)
    • Year and Date
      2016-11-15
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Silicon Single Boron Transistor2016

    • Author(s)
      Y.Ono, M.Hori, A.Fujiwara
    • Organizer
      ICNERE EECCiS2016
    • Place of Presentation
      マラン(インドネシア)
    • Year and Date
      2016-10-31
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Manipulation of Single Charges Using Dopant Atoms in Silicon-Interplay with Intervalley Phonon Emission2016

    • Author(s)
      Y.Ono, M.Hori, G.P.Lansbergen, A.Fujiwara
    • Organizer
      Inter Academia2016
    • Place of Presentation
      ワルシャワ(ポーランド)
    • Year and Date
      2016-09-26
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] EDMR on recombination process in Silicon MOSFETs at room Temperature2016

    • Author(s)
      M.Hori, Y.Ono
    • Organizer
      Inter Academia2016
    • Place of Presentation
      ワルシャワ(ポーランド)
    • Year and Date
      2016-09-26
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Charge Pumping Current from Single Si/SiO2 Interface Traps: Direct Observation of Pb Centers and Fundamental Trap-Counting by the Charge Pumping Method by the charge pumping method2016

    • Author(s)
      土屋敏章,小野行徳
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県・新潟市)
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
    • Invited
  • [Presentation] 高感度チャージポンピングEDMR法の開発2016

    • Author(s)
      堀 匡寛, 成松諒一, 土屋敏章, 小野行徳
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県・新潟市)
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
  • [Presentation] Time domain charge pumping on silicon-on-insulator MOS transistors2016

    • Author(s)
      T.Watanabe, M.Hori, Y.Ono
    • Organizer
      2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD2016)
    • Place of Presentation
      函館国際ホテル(北海道・函館市)
    • Year and Date
      2016-07-04
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Charge pumping EDMR towards charge/spin manipulation in silicon at room temperature2016

    • Author(s)
      M.Hori, R.Narimatsu, Y.Ono
    • Organizer
      2016 IEEE Silicon Nanoelectronics Workshop(SNW2016)
    • Place of Presentation
      ホノルル(米国)
    • Year and Date
      2016-06-12
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Novel application of the charge pumping process for charge and spin control2016

    • Author(s)
      M.Hori,Y.Ono
    • Organizer
      EMN Meeting on Quantum 2016
    • Place of Presentation
      プーケット (タイ)
    • Year and Date
      2016-04-08
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Single-dopant transistor and pump-interplay with single phonon-2016

    • Author(s)
      小野 行徳
    • Organizer
      フォノンエンジニアリング講演会
    • Place of Presentation
      早稲田大学(東京都・新宿区)
    • Related Report
      2016 Annual Research Report
    • Invited
  • [Presentation] Fabrication of triple-dot single-electron transistor and its turnstile operation2015

    • Author(s)
      M. Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, and Y. Takahashi
    • Organizer
      28th International Microprocesses and Nanotechnology Conference(MNC2015)
    • Place of Presentation
      Toyama International Conference Center, Toyama
    • Year and Date
      2015-11-10
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Presentation] Cryogenic Charge Pumping using Silicon on Insulators2015

    • Author(s)
      T. Watanabe, M. Hori, T. Saruwatari, A. Fujiwara, and Y. Ono
    • Organizer
      8th International Microprocesses and Nanotechnology Conference(MNC2015)
    • Place of Presentation
      Toyama International Conference Center, Toyama
    • Year and Date
      2015-11-10
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Presentation] Electrically detected magnetic resonance study on silicon PN junction2015

    • Author(s)
      Y. Nishiuchi, K. Furuta, T. Mitani, M. Hori, Y. Ono
    • Organizer
      2015 Asdia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Jeju Island, Korea
    • Year and Date
      2015-07-01
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Presentation] Charge pumping by point defects - Towards ultimate control of recombination in silicon2015

    • Author(s)
      Y. Ono M. Hori
    • Organizer
      Silicon nanoelectronics for advanced applications
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2015-06-16
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] ESR measurements of As donor electrons in silicon2015

    • Author(s)
      M. Hori, M. Uematsu, A. Fujiwara, Y. Ono
    • Organizer
      The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015)
    • Place of Presentation
      TOKI MESSE Niigata Convention Center Niigata, Japan
    • Year and Date
      2015-06-16
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Presentation] Low Temperature Charge Pumping in SOI Gated PIN Diode2015

    • Author(s)
      T. Watanabe, M. Hori, T. Saruwatari, A. Fujiwara, and Y. Ono
    • Organizer
      2015 Silicon Nanoelectronics Workshop(SNW-2015)
    • Place of Presentation
      Rega Royal Hotel Kyoto, Japan
    • Year and Date
      2015-06-14
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Remarks] 静岡大学電子工学研究所 小野・堀研究室ホームページ

    • URL

      https://wwp.shizuoka.ac.jp/nano/

    • Related Report
      2016 Annual Research Report

URL: 

Published: 2015-04-16   Modified: 2018-03-22  

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