Development of sensitive charge-pumping spin-resonance method and its application to spin control in electron-pair recombination process

• Project/Area Number: 15K13970
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: Shizuoka University (2016); University of Toyama (2015)
• Principal Investigator: ONO YUKINORI 静岡大学, 電子工学研究所, 教授 (80374073)
• Co-Investigator(Kenkyū-buntansha): 土屋 敏章 島根大学, 総合理工学研究科, 教授 (20304248) ; 堀 匡寛 静岡大学, 電子工学研究所, 講師 (50643269)
• Project Period (FY): 2015-04-01 – 2017-03-31
• Project Status: Completed (Fiscal Year 2016)
• Budget Amount: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000); Fiscal Year 2016: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000); Fiscal Year 2015: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
• Keywords: チャージポンピング / 電子スピン共鳴 / シリコン酸化膜界面

Outline of Final Research Achievements

We developed the charge-pumping (CP) electrically detected magnetic resonance (EDMR), and improved its sensitivity. Owing to the improved sensitivity, we successfully performed the CP-EDMR experiments on silicon MOS transistors. The current sensitivity is as low as 103 spins and it is expected that single spin detection is possible by higher frequency (GHz range) operations. We also demonstrated that the energy spectroscopy can be performed by the CP-EDMR.
These results indicated that the developed CP-EDMR allows us to investigate the spin correlation during the CP process.

Research Products

• [Journal Article] Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors (2017)
  • Author(s): A.Samanta, M.Muruganathan, M.Hori, Y.Ono, H.Mizuta, M.Tabe, D.Moraru
  • Journal Title: Appl.Phys.Lett. Volume: 110 Issue: 9
  • DOI: 10.1063/1.4977836
  • Peer Reviewed
• [Journal Article] Improvement of charge-pumping electrically detected magnetic resonance and its application to silicon metal-oxide-semiconductor field-effect transistor (2017)
  • Author(s): M.Hori, T.Tsuchiya, Y.Ono
  • Journal Title: Appl. Phys. Express Volume: 10 Issue: 1 Pages: 015701-015701
  • DOI: 10.7567/apex.10.015701
  • NAID: 210000135738
  • Peer Reviewed
• [Journal Article] Time-domain charge pumping on silicon-on-indulator MOS devices (2017)
  • Author(s): T.Watanabe, M.Hori, T.Tsuchiya, A.Fujiwara, Y.Ono
  • Journal Title: Jpn. J. Appl. Phys Volume: 56 Issue: 1 Pages: 011303-011303
  • DOI: 10.7567/jjap.56.011303
  • Peer Reviewed
• [Journal Article] EDMR on Recombination Process in Silicon MOSFET at Room Temperature (2017)
  • Author(s): M. Hori, Y. Ono
  • Journal Title: Springer Series Advances in Intelligent Systems and Computing, Recent Global Research and Education :Technological Challenges Volume: 519 Pages: 89-93
  • DOI: 10.1007/978-3-319-46490-9_13
  • ISBN: 9783319464893, 9783319464909
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Manipulation of Single Charges Using Dopant Atoms in Silicon - Interplay with Intervalley Phonon Emission (2017)
  • Author(s): Y. Ono, M. Hori, G. P. Lansbergen, A. Fujiwara
  • Journal Title: Springer Series Advances in Intelligent Systems and Computing, Recent Global Research and Education :Technological Challenges Volume: 519 Pages: 137-141
  • DOI: 10.1007/978-3-319-46490-9_20
  • ISBN: 9783319464893, 9783319464909
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Fabrication and single-electron-transfer operation of a triple-dot single-electron transistor (2015)
  • Author(s): M. Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi
  • Journal Title: J. Appl. Phys. Volume: 118 Issue: 21
  • DOI: 10.1063/1.4936790
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Electrical activation and electron spin resonance measurements of arsenic implanted in silicon (2015)
  • Author(s): M. Hori, M. Uematsu, A. Fujiwara, Y. Ono
  • Journal Title: Applied Physics Letters Volume: 106 Issue: 14
  • DOI: 10.1063/1.4917295
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Evaluation of Accuracy of Charge Pumping Current in Time Domain (2015)
  • Author(s): T. Watanabe, M. Hori, T. Tsuchiya, Y. Ono
  • Journal Title: IEICE Transactions on Electronics Volume: E98.C Issue: 5 Pages: 390-394
  • DOI: 10.1587/transele.E98.C.390
  • NAID: 130005067742
  • ISSN: 0916-8524, 1745-1353
  • Peer Reviewed / Acknowledgement Compliant
• [Presentation] SOI MOS p-i-nダイオードの低温チャージポンピング (2017)
  • Author(s): 渡邉時暢, 堀匡寛, 小野行徳
  • Organizer: 電子情報通信学会研究会
  • Place of Presentation: 北海道大学（北海道・札幌市）
• [Presentation] Study of Electron Localization Effects in Donor-Acceptor Pairs in Low-Dimensional Si Tunnel Diodes (2017)
  • Author(s): Prabhudesai Gaurang, Anh Le The, Shibuya Mitsuki, Manoharan Muruganathan, Hori Masahiro, Ono Yukinori, Mizuta Hiroshi, Tabe Michiharu, Moraru Daniel
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜（神奈川県・横浜市）
• [Presentation] Study of Stability of A-few-donor Quantum Dots with Different Configurations for Room-Temperature Single-Electron Tunneling Operation (2017)
  • Author(s): Hasan KM Tarik, Samanta Arup, Affiff Adnan, Anh Le The, Manoharan Muruganathan, Hori Masahiro, Ono Yukinori ,Mizuta Hiroshi,Tabe Michiharu, Moraru Daniel
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜（神奈川県・横浜市）
• [Presentation] Silicon-on-insulator MOS デバイスにおける実時間チャージポンピングの応用 (2017)
  • Author(s): 渡邉 時暢, 堀 匡寛, 土屋 敏章, 藤原 聡, 小野 行徳
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜（神奈川県・横浜市）
• [Presentation] シリコンにおけるチャージポンプー電荷とスピンの室温極限操作に向けてー (2017)
  • Author(s): 小野 行徳, 堀匡寛, 土屋敏章
  • Organizer: 第29回シリサイド系半導体研究会
  • Place of Presentation: 八洲学園大学（神奈川県・横浜市）
  • Invited
• [Presentation] Charge pumping EDMR for MOS interface analysis (2016)
  • Author(s): M.Hori,Y.Ono
  • Organizer: The 18th Takayanagi Kenjiro Memorial Symposium
  • Place of Presentation: 静岡大学（静岡県・浜松市）
  • Year and Date: 2016-11-15
  • Int'l Joint Research / Invited
• [Presentation] Silicon Single Boron Transistor (2016)
  • Author(s): Y.Ono, M.Hori, A.Fujiwara
  • Organizer: ICNERE EECCiS2016
  • Place of Presentation: マラン（インドネシア）
  • Year and Date: 2016-10-31
  • Int'l Joint Research
• [Presentation] Manipulation of Single Charges Using Dopant Atoms in Silicon-Interplay with Intervalley Phonon Emission (2016)
  • Author(s): Y.Ono, M.Hori, G.P.Lansbergen, A.Fujiwara
  • Organizer: Inter Academia2016
  • Place of Presentation: ワルシャワ（ポーランド）
  • Year and Date: 2016-09-26
  • Int'l Joint Research
• [Presentation] EDMR on recombination process in Silicon MOSFETs at room Temperature (2016)
  • Author(s): M.Hori, Y.Ono
  • Organizer: Inter Academia2016
  • Place of Presentation: ワルシャワ（ポーランド）
  • Year and Date: 2016-09-26
  • Int'l Joint Research
• [Presentation] Charge Pumping Current from Single Si/SiO2 Interface Traps: Direct Observation of Pb Centers and Fundamental Trap-Counting by the Charge Pumping Method by the charge pumping method (2016)
  • Author(s): 土屋敏章,小野行徳
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ（新潟県・新潟市）
  • Year and Date: 2016-09-13
  • Invited
• [Presentation] 高感度チャージポンピングEDMR法の開発 (2016)
  • Author(s): 堀 匡寛, 成松諒一, 土屋敏章, 小野行徳
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ（新潟県・新潟市）
  • Year and Date: 2016-09-13
• [Presentation] Time domain charge pumping on silicon-on-insulator MOS transistors (2016)
  • Author(s): T.Watanabe, M.Hori, Y.Ono
  • Organizer: 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD2016)
  • Place of Presentation: 函館国際ホテル（北海道・函館市）
  • Year and Date: 2016-07-04
  • Int'l Joint Research
• [Presentation] Charge pumping EDMR towards charge/spin manipulation in silicon at room temperature (2016)
  • Author(s): M.Hori, R.Narimatsu, Y.Ono
  • Organizer: 2016 IEEE Silicon Nanoelectronics Workshop(SNW2016)
  • Place of Presentation: ホノルル（米国）
  • Year and Date: 2016-06-12
  • Int'l Joint Research
• [Presentation] Novel application of the charge pumping process for charge and spin control (2016)
  • Author(s): M.Hori,Y.Ono
  • Organizer: EMN Meeting on Quantum 2016
  • Place of Presentation: プーケット (タイ)
  • Year and Date: 2016-04-08
  • Int'l Joint Research / Invited
• [Presentation] Single-dopant transistor and pump-interplay with single phonon- (2016)
  • Author(s): 小野 行徳
  • Organizer: フォノンエンジニアリング講演会
  • Place of Presentation: 早稲田大学（東京都・新宿区）
  • Invited
• [Presentation] Fabrication of triple-dot single-electron transistor and its turnstile operation (2015)
  • Author(s): M. Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, and Y. Takahashi
  • Organizer: 28th International Microprocesses and Nanotechnology Conference(MNC2015)
  • Place of Presentation: Toyama International Conference Center, Toyama
  • Year and Date: 2015-11-10
  • Int'l Joint Research
• [Presentation] Cryogenic Charge Pumping using Silicon on Insulators (2015)
  • Author(s): T. Watanabe, M. Hori, T. Saruwatari, A. Fujiwara, and Y. Ono
  • Organizer: 8th International Microprocesses and Nanotechnology Conference(MNC2015)
  • Place of Presentation: Toyama International Conference Center, Toyama
  • Year and Date: 2015-11-10
  • Int'l Joint Research
• [Presentation] Electrically detected magnetic resonance study on silicon PN junction (2015)
  • Author(s): Y. Nishiuchi, K. Furuta, T. Mitani, M. Hori, Y. Ono
  • Organizer: 2015 Asdia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: Jeju Island, Korea
  • Year and Date: 2015-07-01
  • Int'l Joint Research
• [Presentation] Charge pumping by point defects - Towards ultimate control of recombination in silicon (2015)
  • Author(s): Y. Ono M. Hori
  • Organizer: Silicon nanoelectronics for advanced applications
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2015-06-16
  • Int'l Joint Research / Invited
• [Presentation] ESR measurements of As donor electrons in silicon (2015)
  • Author(s): M. Hori, M. Uematsu, A. Fujiwara, Y. Ono
  • Organizer: The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015)
  • Place of Presentation: TOKI MESSE Niigata Convention Center Niigata, Japan
  • Year and Date: 2015-06-16
  • Int'l Joint Research
• [Presentation] Low Temperature Charge Pumping in SOI Gated PIN Diode (2015)
  • Author(s): T. Watanabe, M. Hori, T. Saruwatari, A. Fujiwara, and Y. Ono
  • Organizer: 2015 Silicon Nanoelectronics Workshop(SNW-2015)
  • Place of Presentation: Rega Royal Hotel Kyoto, Japan
  • Year and Date: 2015-06-14
  • Int'l Joint Research
• [Remarks] 静岡大学電子工学研究所 小野・堀研究室ホームページ
  • URL: https://wwp.shizuoka.ac.jp/nano/