| Project/Area Number |
15K13976
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Hiroshima University |
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Principal Investigator |
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2016: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2015: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | フレキシブルエレクトロニクス / 転写技術 / 単結晶シリコン / 転写 |
|---|
| Outline of Final Research Achievements |
On the development of single-crystalline silicon layer transfer technology to PET substrate, following results became clear; 1) single-crystalline layer on PET forms Si-O-C bonds by low temperature anneal, which gives strong attachment, 2) SiO2 pillar can be formed in tapered shape by ion implantation to BOX layer, which make the separation possible between SOI/BOX layer interface, 3) NMOS inverters fabricated on PET are operated at 3MHz on the basis of present layer transfer technology.
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