| Project/Area Number |
15K13984
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
Numata Takayuki 国立研究開発法人産業技術総合研究所, 計量標準総合センター, 主任研究員 (60420288)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2016: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2015: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
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| Keywords | 赤外線 / レーザ / ビームプロファイル / イメージセンサ / 熱雑音 / 半導体 / 暗電流 / 可視化 |
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| Outline of Final Research Achievements |
A novel measurement technique of infrared laser beam profile using thermally excited carriers in semiconductor image sensor has been proposed and demonstrated. A mid-infrared laser beam from a carbon dioxide laser with known radiant power and beam size are locally irradiated on sensitive area of a silicon-based image sensor. Thermally excited carriers are detected by corresponding pixels and compose a beam spot-like image. Ratio of 1/e2 diameters between incident laser and detected signals among different size of incident laser beam showed their good correlation. The result shows a strong potential of this proposed method as a new measurement technique for infrared laser beam.
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