Thin film formation of refractory metals using mist CVD method
| Project/Area Number |
15K14181
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Material processing/Microstructural control engineering
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| Research Institution | Kyoto University |
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Principal Investigator |
IKENOUE Takumi 京都大学, エネルギー科学研究科, 助教 (00633538)
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| Co-Investigator(Kenkyū-buntansha) |
三宅 正男 京都大学, エネルギー科学研究科, 准教授 (60361648)
平藤 哲司 京都大学, エネルギー科学研究科, 教授 (70208833)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | リフラクトリーメタル / タングステン / モリブデン / 炭化物 / ミストCVD法 |
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| Outline of Final Research Achievements |
In this project, various precursors and solvents were examined for thin film formation of refractory metals by solution-based mist CVD method.
The case of using a source solution containing oxygen atoms in the precursor or solvent, an oxide thin film was obtained.However, when an acetonitrile solution of molybdenum chloride or tungsten chloride was used as a source, molybdenum carbide or tungsten carbide was formed above 650 oC. These results were in good agreement with the stable region considered from the equilibrium reaction of the precursor and solvent thermal decomposition products.
As described above, it was shown that mist CVD method can be applied to film formation not only oxide but also carbide or another compound by appropriately selecting precursor and solvent of source solution.
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Report
(3 results)
Research Products
(1 results)
