| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2017: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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| Outline of Final Research Achievements |
We investigated properties of Cu2O films for the development of water splitting devices with Cu2O homojunction. Although we investigated the effect of chlorine doping and deposition conditions to prepare n-type Cu2O, we could not realize clear n-type conductivity and homojunciton devices. However, we obtained big progresses in the improvement of p-type Cu2O and the device fabrication. We demonstrated that thermal annealing at 150℃ significantly improves hole mobility of electrochemically deposited p-type Cu2O. By using this p-type Cu2O, we successfully fabricated a ZnO/Cu2O heterojunction device with good long wavelength response.
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