Development of monojunction Cu2O devices for water splitting devices
Project/Area Number |
15K14299
|
Research Category |
Grant-in-Aid for Challenging Exploratory Research
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Allocation Type | Multi-year Fund |
Research Field |
Energy engineering
|
Research Institution | Tokyo Institute of Technology |
Principal Investigator |
|
Co-Investigator(Kenkyū-buntansha) |
宮崎 尚 防衛大学校(総合教育学群、人文社会科学群、応用科学群、電気情報学群及びシステム工学群), 電気情報学群, 助教 (30531991)
|
Project Period (FY) |
2015-04-01 – 2018-03-31
|
Project Status |
Completed (Fiscal Year 2017)
|
Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2017: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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Keywords | Cu2O / 電気化学製膜 / 光電変換 / 水分解 / ドーピング / 水素生成 / pn接合 |
Outline of Final Research Achievements |
We investigated properties of Cu2O films for the development of water splitting devices with Cu2O homojunction. Although we investigated the effect of chlorine doping and deposition conditions to prepare n-type Cu2O, we could not realize clear n-type conductivity and homojunciton devices. However, we obtained big progresses in the improvement of p-type Cu2O and the device fabrication. We demonstrated that thermal annealing at 150℃ significantly improves hole mobility of electrochemically deposited p-type Cu2O. By using this p-type Cu2O, we successfully fabricated a ZnO/Cu2O heterojunction device with good long wavelength response.
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Report
(4 results)
Research Products
(11 results)