| Project/Area Number |
15K17433
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Nanostructural physics
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| Research Institution | The University of Tokyo |
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Principal Investigator |
Arai Miho 東京大学, 生産技術研究所, 特任研究員 (20738588)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2016: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2015: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | ファンデルワールス接合 / 強磁性 / スピントロニクスデバイス / 原子層物質 / 強磁性体 / ファンデールワールスヘテロ構造 / 二次元原子層物質 / グラフェン / スピン注入 |
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| Outline of Final Research Achievements |
A van der Waals (vdW) junction based on two-dimensional materials presents a new method for constructing heterostructures with high quality interfaces. Since there are various layered materials, a number of combinations are applicable to built vdW heterostructures, such as metal, insulator, semiconductor, superconductor, and topological insulator. However, a vdW heterostructure including ferromagnetic layered materials is still missing. We fabricated Fe0.25TaS2/Fe0.25TaS2 and Fe0.25TaS2/ Cr1/3TaS2 junctions and observed magnetic resistance. We observed magneto-resistance signals witch can be assigned to the switching of magnetization between parallel and antiparallel configuration. The observed signal is attributed to a tunnel magneto-resistance effect. Our study demonstrates that vdW heterostructures can be used for spintoronics devices.
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