Clarification of crystal growth mechanism for development of large bulk GaN single crystal
| Project/Area Number |
15K17459
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Crystal engineering
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| Research Institution | Mie University |
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Principal Investigator |
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| Research Collaborator |
MORIKAWA Yoshitada 大阪大学, 工学研究科, 教授
MORI Yusuke 大阪大学, 工学研究科, 教授
YOSHIMURA Masashi 大阪大学, レーザーエネルギー学研究センター, 教授
IMADE Mamoru 大阪大学, 工学研究科, 准教授
KAKIMOTO Koichi 九州大学, 応用力学研究所, 教授
KANGAWA Yoshihiro 九州大学, 応用力学研究所, 教授
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2017: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2016: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2015: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 窒化ガリウム / 結晶成長 / 第一原理計算 / Naフラックス成長 / OVPE成長 / 不純物 |
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| Outline of Final Research Achievements |
For the development of large bulk GaN single crystal, we carried out numerical analysis using first-principles calculations aimed at clarifying the crystal growth mechanism in Na flux method and OVPE method. First we investigated the effect of C addition on increase in growth rate and found that the CN ions those stably existed in the C-added Na-Ga melts dissociate in the vicinity of GaN crystal surface. Next, we investigated the stable surface structures of the polar, non-polar, and semi-polar GaN surfaces and estimated desorption energies of oxygen impurities from the GaN crystal surfaces.
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Report
(4 results)
Research Products
(18 results)
