| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Outline of Final Research Achievements |
Today's electronics strongly desires the low-voltage transistors for decreasing the power consumption of the next-generation integrated circuits. This research focused on the novel field-effect transistor which incorporates the metal-insulator transitions of VO2 in the transistor channel, and is expected to sharpen the switching slope and achieve the low-voltage operation. The transistor incorporating VO2 was successfully demonstrated, and its operation mechanism was elucidated through the evaluation of the local electronic states at the interface as well as the interaction between the interface and the rest of the VO2 channel.
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