| Project/Area Number |
15K17483
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
General applied physics
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
Azuma Yasuo 東京工業大学, 科学技術創成研究院, 准教授 (80452415)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2016: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2015: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | 単電子デバイス / 単一電子素子 / 単一電子現象 / ナノメカニカル |
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| Outline of Final Research Achievements |
Current standard devices can be realized based on nanomechanical Coulomb blockade shuttle phenomena, which is electron shuttle transportation by mechanical vibration in nanometer scale. Here we fabricated nanogap electrodes on substrates by electron-beam lithography. Combining the nanogap electrodes and metal nanoparticles, single-electron transistors are fabricated and the number of electrons on the nanoparticles are controlled. We also fabricated nanogap electrodes including a beam structure. Under the application of the RF signal, we observe a tunneling current between the nanogap electrodes with the beam structure. The tunneling current shows a peak value at a specific frequency which corresponds to an eigenfrequency of the beam structure. From the peak current value and the eigenfrequency, almost one electron transport in a period of beam vibration. Therefore, electron shuttle phenomena can be demonstrated on solid-state devices.
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