| Project/Area Number |
15K17495
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Quantum beam science
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
Fujii Go 国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, 研究員 (30709598)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | 超伝導 / シリコン貫通電極 / X線検出器 / 超伝導トンネル接合 |
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| Outline of Final Research Achievements |
Our 100-pixel superconducting-tunnel-junction (STJ) array X-ray detectors exhibit a best energy resolution of about 5 eV in a soft X-ray range less than 1 keV. The energy resolution of the STJ array detectors is about 10 times higher than that of silicon drift detectors. In this study, in order to realize 1000 pixels, we have fabricated three-dimensional structure. First, we have fabricate 1024-pixel STJ array on the planarized SiO2 layer with embedded Nb wiring leads for the pixels. Average leak current of the STJs was 12.2 nA. Second, we have developed through-silicon via (TSV) array with copper. The TSVs with a diameter of 60 micron m was fabricated.
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