Electric-double-layer doping into organic correlated electron systems

• Project/Area Number: 15K17714
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Condensed matter physics II
• Research Institution: Institute of Physical and Chemical Research
• Principal Investigator: Kawasugi Yoshitaka 国立研究開発法人理化学研究所, 加藤分子物性研究室, 研究員 (40590964)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Project Status: Completed (Fiscal Year 2017)
• Budget Amount: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000); Fiscal Year 2017: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000); Fiscal Year 2016: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000); Fiscal Year 2015: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
• Keywords: 分子性導体 / キャリアドーピング / モット絶縁体 / 電場誘起超伝導

Outline of Final Research Achievements

Charge carrier density is one of the most fundamental parameters that determines the electronic properties of strongly correlated electron systems. The properties can be drastically changed by varying this parameter, such as the case of metal-insulator transitions. In this study, the carrier density of organic correlated electron systems is electrostatically modified by means of electric double layer transistor.
By virtue of the high tunability of organic molecular material, both electron and hole carriers are successfully injected into the same sample of an organic Mott insulator (materials that are insulating because of electron electron interaction). The results indicate that a two-dimensional Mott insulator with next nearest neighbor hopping shows intrinsic doping asymmetry originating from the band structure.

Research Products

• [Journal Article] Organic Phase-transition Transistor with Strongly-correlated Electrons (2018)
  • Author(s): H. M. Yamamoto, M. Suda and Y. Kawasugi
  • Journal Title: Japanese Journal of Applied Physics Volume: 57 Issue: 3S2 Pages: 03EA02-03EA02
  • DOI: 10.7567/jjap.57.03ea02
  • NAID: 210000148737
  • Peer Reviewed
• [Journal Article] Critical Behavior in Doping-Driven Metal-Insulator Transition on Single-Crystalline Organic Mott-FET (2017)
  • Author(s): Yoshiaki Sato, Yoshitaka Kawasugi, Masayuki Suda, Hiroshi M Yamamoto, Reizo Kato
  • Journal Title: Nano Letters Volume: 17 Issue: 2 Pages: 708-714
  • DOI: 10.1021/acs.nanolett.6b03817
  • Peer Reviewed
• [Journal Article] Electron-hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator (2016)
  • Author(s): Yoshitaka Kawasugi, Kazuhiro Seki, Yusuke Edagawa, Yoshiaki Sato, Jiang Pu, Taishi Takenobu, Seiji Yunoki, Hiroshi M. Yamamoto, Reizo Kato
  • Journal Title: Nature Communications Volume: 7 Issue: 1 Pages: 12356-12356
  • DOI: 10.1038/ncomms12356
  • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Simultaneous enhancement of conductivity and Seebeck coefficient in an organic Mott transistor (2016)
  • Author(s): Yoshitaka Kawasugi, Kazuhiro Seki, Yusuke Edagawa, Yoshiaki Sato, Jiang Pu, Taishi Takenobu, Seiji Yunoki, Hiroshi M. Yamamoto, Reizo Kato
  • Journal Title: Appl. Phys. Lett. Volume: 109 Issue: 23 Pages: 233301-233301
  • DOI: 10.1063/1.4971310
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Presentation] 電気二重層ドーピングとひずみ制御による κ 型 ET 塩の超伝導相の探索II (2018)
  • Author(s): 川椙義高、関和弘、蒲江、竹延大志、柚木清 司、山本浩史、加藤礼三
  • Organizer: 日本物理学会第73回年次大会
• [Presentation] 電気二重層ドーピングとひずみ制御による κ 型 ET 塩の超伝導相の探索 (2017)
  • Author(s): 川椙義高、関和弘、蒲江、竹延大志、柚木清 司、山本浩史、加藤礼三
  • Organizer: 日本物理学会2017年秋季大会
• [Presentation] Electron-Hole Doping Asymmetry in an Organic Mott Insulator Investigated by Electric-double-Layer Doping (2017)
  • Author(s): Yoshitaka Kawasugi
  • Organizer: ISCOM2017 (The 12th International Symposium on Crystalline Organic Metals, Superconductors and Magnets)
  • Int'l Joint Research / Invited
• [Presentation] κ型ET塩に対する電気二重層を用いたキャリアドーピングIV (2016)
  • Author(s): 川椙義高、関和弘、枝川祐介、佐藤慶明、蒲江、竹延大志、柚木清司、山本浩史、加藤礼三
  • Organizer: 日本物理学会2016年秋季大会
  • Place of Presentation: 金沢大学(石川県金沢市)
  • Year and Date: 2016-09-13
• [Presentation] κ型ET塩に対する電気二重層を用いたキャリアドーピングIV (2016)
  • Author(s): 川椙義高、関和弘、枝川祐介、佐藤慶明、蒲江、竹延大志、柚木清司、山本浩史、加藤礼三
  • Organizer: 日本物理学会第72回年次大会
  • Place of Presentation: 金沢大学(石川県金沢市)
  • Year and Date: 2016-09-13
• [Presentation] Asymmetric Reconstruction of Fermi Surface in a Gate-Tuned Organic Mott Insulator (2016)
  • Author(s): Y. Kawasugi, K. Seki, Y. Edagawa, Y. Sato, J. Pu, T. Takenobu, S. Yunoki, H. M. Yamamoto, and R. Kato
  • Organizer: Gordon Research Conference: Conductivity & Magnetism in Molecular Materials
  • Place of Presentation: South Hadley, MA, USA
  • Year and Date: 2016-08-14
  • Int'l Joint Research
• [Presentation] 分子性導体に対する電界効果キャリアドーピング (2016)
  • Author(s): 川椙義高
  • Organizer: 日本物理学会第71回年次大会
  • Place of Presentation: 東北学院大学 (宮城県・仙台市)
  • Year and Date: 2016-03-19
• [Presentation] κ型ET塩に対する電気二重層を用いたキャリアドーピングIII (2015)
  • Author(s): 川椙義高、関和弘、枝川祐介、佐藤慶明、蒲江、竹延大志、山本浩史、加藤礼三
  • Organizer: 日本物理学会２０１５年秋季大会
  • Place of Presentation: 関西大学 (大阪府・吹田市)
  • Year and Date: 2015-09-16
• [Presentation] Carrier doping into a Mott insulator κ-(BEDT-TTF)2Cu[N(CN)2]Cl using electric double layer transistor” (2015)
  • Author(s): Yoshitaka Kawasugi, Kazuhiro Seki, Yusuke Edagawa, Yoshiaki Sato, Jiang Pu, Taishi Takenobu, Hiroshi M. Yamamoto, and Reizo Kato
  • Organizer: International Symposium on Crystalline Organic Metals (ISCOM)
  • Place of Presentation: Bad Gogging (Germany)
  • Year and Date: 2015-09-10
  • Int'l Joint Research
• [Book] 固体物理(記事タイトル: 分子性２次元モット絶縁体におけるフィリング制御の新展開) (2016)
  • Author(s): 川椙義高、関和弘、須田理行、山本浩史
  • Total Pages: 13
  • Publisher: アグネ技術センター
• [Remarks] 両極性動作する有機モット転移トランジスタを実現
  • URL: http://www.riken.jp/pr/press/2016/20160805_3/