| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2016: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2015: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
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| Outline of Final Research Achievements |
Electromigration (EM) damage mechanism of Sn58Bi (wt%) solder, which is so called next-generation low-temperature solder, was clarified. In addition, in terms of EM reliability issues in solder joint, several countermeasures for enhancing EM resistance of Sn58Bi solder were proposed, as well as the proposition of applying EM mechanism to new metal recycle technology.
On the basis of a developed test structure, in which different micro-sized solder strips were jointed and the minimum solder length was 50μm, the critical condition for initiation of EM damage was investigated with a high degree of accuracy. The variations in growth of intermetallic compound layer and local electrical resistance and temperature with the decreasing solder size, were investigated. Moreover, coating of artificial passivation layer and addition of microelements for enhancing EM resistance were proposed, and their effects were verified.
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