| Project/Area Number |
15K17936
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Materials/Mechanics of materials
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
Nobuyuki Shishido 名古屋工業大学, 工学(系)研究科(研究院), 研究員 (00570235)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2016: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2015: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | 信頼性 / 界面強度 / 電子デバイス / ナノテク / 結晶塑性 / 微視組織 / FCC金属 / その場試験 / 異種材界面 / 塑性変形 / 強度 / 単結晶 |
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| Outline of Final Research Achievements |
In this research, the diversity of fracture strength for the metal/insulator interface in semiconductor interconnects was investigated. Single crystalline copper and the interface structure consists of single crystalline copper and insulation layers were subjected to microscale mechanical test under scanning electron microscopy in order to evaluate the plasticity of single crystal copper and Cu/SiN interface strength quantitatively. Considering the obtained results, the surface energy of Cu/SiN interface strongly depends on the crystal plane orientation of Cu crystal facing to SiN layer. In addition, the diversity of resistance for Cu/SiN interface fracture is magnified by both the anisotropy of plasticity due to copper crystallinity and above-mentioned the diversity of Cu/SiN surface energy.
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