| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2017: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
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| Outline of Final Research Achievements |
The aim of study is to evaluate plastic deformation behavior on silicon surface of both defect and hydrogen. Two groups of silicon sample with/without surface damage introduced by reactive ion etching (RIE) and exposure to hydrogen plasma to introduce hydrogen into crystal, thus four types of samples were prepared. Depth profile and trapping state of hydrogen atoms diffused into each samples were measured by thermal desorption spectroscopy (TDS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS). Nanoindentation curve of each samples were compared under deep and shallow indentation depth. As a results, there found on change in indentation depth under same load level between two case with/without exposure to hydrogen plasma. In contrast to this, surface damage and hydrogen had significantly deeper indents than the other cases. These results suggested that plastic deformation of silicon is enhanced due to synergy effect of both defect and hydrogen even at room temperature.
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