| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2017: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2016: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2015: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Outline of Final Research Achievements |
To control reliability and degradation issue such as threshold voltage (VTH) instability in AlGaN/GaN high-electron-mobility transistors (AlGaN/GaN HEMTs) with metal-insulator-semiconductor (MIS) structures, we have investigated insulator/AlGaN interface properties. The correlation between the interface properties and VTH instability in AlGaN/GaN MIS HEMTs were discussed on the basis of both experimental and theoretical results. From the analysis of the results, we have come to the conclusion that that the interface states at insulator/AlGaN caused VTH instability in AlGaN/GaN MIS HEMTs. In addition, aluminum titanate, a novel and promising gate dielectric was successfully fabricated by ultrasonic spray-assisted mist chemical vapor deposition (mist CVD), which is a low-cost and low-damage alternative for dielectric deposition.
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