| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2015: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Outline of Final Research Achievements |
Various techniques have been studied for realizing single photon sources which play a key role in the field of quantum information technology. In this study, I focused my attention on the feature of Er emission and carried out an investigation to realize single photons with excellent characteristics in long distance transmission and temperature dependence.
It is found that the number of Er emission centers can be controlled by changing the growth temperature and time of the GaAs cap layer in Er atomic-layer doped GaAs. In addition, enhancement of Er emission intensity was achieved by fabricating Er atomic-layer doped GaAs with GaAs/AlAs distributed Bragg reflectors.
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