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Single photon generation from Er atomic-layer doped semiconductors with micro-cavity structures

Research Project

Project/Area Number 15K18035
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Electronic materials/Electric materials
Research InstitutionSaitama University

Principal Investigator

TAKAMIYA Kengo  埼玉大学, 総合技術支援センター, 専門技術員 (70739458)

Project Period (FY) 2015-04-01 – 2017-03-31
Project Status Completed (Fiscal Year 2016)
Budget Amount *help
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2015: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Keywords単一光子 / エルビウム / 原子層ドープ / 微小共振器構造 / 非古典光源
Outline of Final Research Achievements

Various techniques have been studied for realizing single photon sources which play a key role in the field of quantum information technology. In this study, I focused my attention on the feature of Er emission and carried out an investigation to realize single photons with excellent characteristics in long distance transmission and temperature dependence.
It is found that the number of Er emission centers can be controlled by changing the growth temperature and time of the GaAs cap layer in Er atomic-layer doped GaAs. In addition, enhancement of Er emission intensity was achieved by fabricating Er atomic-layer doped GaAs with GaAs/AlAs distributed Bragg reflectors.

Report

(3 results)
  • 2016 Annual Research Report   Final Research Report ( PDF )
  • 2015 Research-status Report
  • Research Products

    (6 results)

All 2017 2016 2015

All Presentation (6 results) (of which Int'l Joint Research: 1 results)

  • [Presentation] ErドープGaAsからの発光のMBE成長温度依存性2017

    • Author(s)
      五十嵐大輔、髙宮健吾、八木修平、伊藤隆、秋山英文、矢口裕之
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県、横浜市)
    • Year and Date
      2017-03-17
    • Related Report
      2016 Annual Research Report
  • [Presentation] レーザ照射によるGaInNAs混晶半導体の発光効率への影響2016

    • Author(s)
      米倉成一、髙宮健吾、八木修平、上田修、矢口裕之
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県、新潟市)
    • Year and Date
      2016-09-15
    • Related Report
      2016 Annual Research Report
  • [Presentation] Effect of Low Temperature Growth and a Distributed Bragg Reflector on the emission from Molecular Beam Epitaxy-Grown Er δ-doped GaAs2016

    • Author(s)
      K. Takamiya, M. Suto, K. Iimura, S. Yagi, H. Yaguchi
    • Organizer
      the 19th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Le Corum(Montpelier, France)
    • Year and Date
      2016-09-06
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] AlAs/GaAs分布ブラッグ反射鏡を有するErδドープGaAsの発光特性2015

    • Author(s)
      須藤 真樹、金 日国、高宮 健吾、八木 修平、矢口 裕之
    • Organizer
      応用物理学会
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2015-09-13
    • Related Report
      2015 Research-status Report
  • [Presentation] GaAs MBE成長におけるEr原子の表面偏析の温度依存性2015

    • Author(s)
      金 日国、高宮 健吾、八木 修平、土方 泰斗、矢口 裕之
    • Organizer
      応用物理学会
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2015-09-13
    • Related Report
      2015 Research-status Report
  • [Presentation] ErドープGaAsからの発光に対する低温成長の影響2015

    • Author(s)
      飯村 啓泰、金 日国、高宮 健吾、八木 修平、矢口 裕之
    • Organizer
      応用物理学会
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2015-09-13
    • Related Report
      2015 Research-status Report

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Published: 2015-04-16   Modified: 2018-03-22  

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