| Project/Area Number |
15K18036
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Meijo University (2016)
Chiba University (2015) |
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Principal Investigator |
Imai Daichi 名城大学, 理工学部, 助教 (20739057)
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| Research Collaborator |
Akihiko Yoshikawa 千葉大学, 産業連携学術研究推進機構スマートグリーンイノベーション研究拠点, 特任教授
Kazuhide Kusakabe 千葉大学, 産業連携学術研究推進機構スマートグリーンイノベーション研究拠点, 特任准教授
Wang Ke 千葉大学, 産業連携学術研究推進機構スマートグリーンイノベーション研究拠点, 特任准教授
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | 1分子層InN / 窒化物半導体 / 短周期超格子 / 擬似混晶（秩序混晶） |
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| Outline of Final Research Achievements |
Ordered InGaN ternary alloys based on (InN)1/(GaN)n short-period superlattices (SPSs) have attracted much attention for their application to advanced photonic and electronic devices, because these alloys can be potentially free from their immiscibility problems. Generally, band-gap energy (Eg) of SPSs is limited to the discrete value because effective In composition is determined by the volume ratio of InN and GaN layers. In this study, we have tried continuous energy band control of SPSs by changing not only the volume ratio of InN and GaN layers, but also the disk size of fractional ML InN, i.e. 1-ML InN coverage. We have revealed that the Eg of 1ML-InN/4ML-GaN SPSs could be continuously controlled by changing 1-ML InN coverage when the effective In composition was in the range of 6 to 11%. It was also observed that the Eg of these samples were smaller than those of conventional InGaN ternary alloys in the same In composition range.
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