Development of electronic applications of high sp 3 ratio amorphous carbon films with assistance of deuterium termination by reduction of electronic defects
| Project/Area Number |
15K18038
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2016: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2015: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | アモルファス炭素膜 |
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| Outline of Final Research Achievements |
The amorphous isotope 13 C carbon films was fabricated by FCVA and the MIS type device was fabricated using these films and the characteristics were evaluated. We prepared 13C target on 12C usual target as target for FCVA.In the case of the FCVA method,it was impossible to deposit film due to heat generation by passage of currentat boundary of 12C and 13C. Therefore, amorphous isotope 13 C carbon films were deposited by CVD method from 13 C methane. And Al/a-C:H/Si devices with MIS structure were investigated. It was suggested that the electronic state of 13 C effected these films properties from the evaluation of thier light absorption and thier photovoltaic characteristics.
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Report
(3 results)
Research Products
(4 results)
