Development of low-defect high-purity and single-chirality carbon nanotube device
| Project/Area Number |
15K18039
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo University of Science |
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Principal Investigator |
Maki Shimizu 東京理科大学, 理学部第一部物理学科, 助教 (80748690)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | カイラリティ / カーボンナノチューブ / 再成長 / 薄膜トランジスタ / カイラリティ分離 |
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| Outline of Final Research Achievements |
The regrowth technique of Single walled carbon nanotubes (SWCNTs) provide a approach for growing SWCNTs with controlled chirality without catalyst.
In this study we separated SWCNTs using gel chromatography and grown by chemical vapor deposition (CVD). We optimized the CVD condition and long SWCNTs were obtained. We investigated the effect of oxydation and observed the substrate before and after CVD process to clarify whether this nanotubes were obtained by regrowth or not.
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Report
(3 results)
Research Products
(4 results)
