Realization of a high-efficiency thin-film solar cell using ionic BaSi2 semiconductor
| Project/Area Number |
15K18040
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | University of Yamanashi |
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Principal Investigator |
HARA Kosuke 山梨大学, 総合研究部, 特任助教 (40714134)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | シリサイド半導体 / 太陽電池 / 真空蒸着 / 硫化スズ / 電気的特性 |
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| Outline of Final Research Achievements |
The heterojunction consisting of tin sulfide (SnS) and barium silicide (BaSi2) semiconductors was proposed as a new structure of high-efficiency thin-film solar cells consisting of earth-abundant elements. Although the photovoltaic power generation was not observed using the SnS/BaSi2 stacked structures within the research period, one of the reasons was revealed to be the surface oxidation of the BaSi2 layer. By optimizing the thermal treatment duration after BaSi2 deposition and by covering the BaSi2 surface with amorphous Si, the surface oxidation was found to be significantly suppressed, which suggests the possible improvement of the SnS/BaSi2 device.
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Report
(3 results)
Research Products
(25 results)
