| Project/Area Number |
15K18043
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
OHMAGARI Shinya 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 研究員 (40712211)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2017: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | ダイヤモンド / ホウ素ドープ / 低抵抗 / ウェハ / 化学気相成長法 / 欠陥 / 縦型パワーデバイス / 低抵抗ウェハ / 結晶成長 / 結晶構造 / 厚膜合成 / ドーピング / パワーデバイス / 省エネルギー / 低損失 |
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| Outline of Final Research Achievements |
Since diamond has superior physical properties than SiC and GaN, it is expected as material for ultra low-loss power electronics. The excellent switching capabilities has been demonstrated for both unipolar and bipolar devices. For practical vertical device structure, low-resistivity wafers are required. However, as for the conventional CVD, the instability of crystal growth such as soot formation, low doping efficiency has been a problem. In this research, heavily boron-doped diamond wafers were fabricated by hot filament CVD method which has advantageous in large area growth. We realized high doping concentration exceeding 1E21 cm-3, and low-resistivity wafer of the few mΩcm. The crystal quality was equivalent to that of commercially available insulating wafers. The high rectifying operation of vertical Schottky barrier diodes was also demonstrated.
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