中空構造Si膜を用いた低温転写技術によるフレキシブル基板上での局所集積回路作製

• Project/Area Number: 15K18054
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: Hiroshima University
• Principal Investigator: 酒池 耕平 広島大学, 先端物質科学研究科, その他 (00740383)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Project Status: Adopted (Fiscal Year 2015)
• Budget Amount: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000); Fiscal Year 2017: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2015: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)