| Project/Area Number |
15K18058
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2016: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2015: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
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| Keywords | トポロジカル / グラフェン / バレー流 / 超格子 / 量子輸送 / 窒化ホウ素 / バリスティック伝導 / 量子バレーホール効果 / バレー軌道磁性 / 有機分子 / スピントロニクス / バレートロニクス / 有機物 / スピン / バレーホール効果 / ポルフィリン |
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| Outline of Final Research Achievements |
We have succeeded to fabricate graphene/hBN superlattice devices and have found the non-local resistance, which should be zero in usual case, becomes the order of quantum resistance. This indicates the first observation of the quantum valley Hall state via transport measurements and the results appeared in Science Advances. In such superlattice structure, an electron possesses valley degree of freedom, and it is expected that such valley current doesn't generate joule heating, indicating the possibility to achieve low power consumption devices. These results are important for realize valleytronics devices, quantum interference devices, and topological superconducting quantum information devices.
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