| Project/Area Number |
15K21076
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Nanomaterials chemistry
Thin film/Surface and interfacial physical properties
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
Kalita Golap 名古屋工業大学, 工学(系)研究科(研究院), 准教授 (20615629)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | Graphene / グラフェン / graphene |
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| Outline of Final Research Achievements |
In this study, we investigated synthesis of large graphene grain by atmospheric and low pressure CVD method using waste plastics and polystyrene as precursor. An oxide layer on copper foil was prepared by annealing treatment to achieve large graphene domain growth. The graphene nucleation was controlled by argon and hydrogen annealing process, and synthesis of large graphene grain was achieved by the CVD method. We were able to growth graphene domain as large as 1.6 mm using waste plastic as precursor. Furthermore, transparent electrode was prepared using the synthesized graphene film form waste materials. A sheet resistance of 120 Ω / Sq was achieved with a transmittance of 90% using the synthesized graphene film.
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