| Project/Area Number |
15K21145
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Nano/Microsystems
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2016: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000)
Fiscal Year 2015: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
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| Keywords | ガスセンサー / 原子層薄膜 / グラフェン / 遷移金属ダイカルコゲナイド / ヘテロ接合 / ダイオード / 光起電力 / MoS2 / ショットキー障壁 |
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| Outline of Final Research Achievements |
In this project, we investigated the impact of adsorption of gas molecules on carrier transport across the vdWs heterojunction consisting of atomically thin-layered materials and explored the novel functions of the heterojunction device useful for gas sensing. We fabricated a pn-junction device using WSe2/MoS2 heterostructure and a Schottky junction device using graphene/MoS2 heterostructure and measured their responses upon exposure of NO2 gas. We found a photovoltaic gas response under light illumination in the WSe2/MoS2 device, and a giant response owing to the Schottky barrier height modulation in the graphene/MoS2 device, and its tunability by bias and gate voltages
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