Gas sensor application of the heterojunction interface in the atomically-thin layered materials

• Project/Area Number: 15K21145
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Nano/Microsystems; Electronic materials/Electric materials
• Research Institution: Osaka University
• Principal Investigator: Tabata Hiroshi 大阪大学, 工学研究科, 助教 (00462705)
• Project Period (FY): 2015-04-01 – 2017-03-31
• Project Status: Completed (Fiscal Year 2016)
• Budget Amount: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000); Fiscal Year 2016: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000); Fiscal Year 2015: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
• Keywords: ガスセンサー / 原子層薄膜 / グラフェン / 遷移金属ダイカルコゲナイド / ヘテロ接合 / ダイオード / 光起電力 / MoS2 / ショットキー障壁

Outline of Final Research Achievements

In this project, we investigated the impact of adsorption of gas molecules on carrier transport across the vdWs heterojunction consisting of atomically thin-layered materials and explored the novel functions of the heterojunction device useful for gas sensing. We fabricated a pn-junction device using WSe2/MoS2 heterostructure and a Schottky junction device using graphene/MoS2 heterostructure and measured their responses upon exposure of NO2 gas. We found a photovoltaic gas response under light illumination in the WSe2/MoS2 device, and a giant response owing to the Schottky barrier height modulation in the graphene/MoS2 device, and its tunability by bias and gate voltages

Research Products

• [Journal Article] Unpredicted Surface Termination of α-Fe2O3(0001) Film Grown by Mist Chemical Vapor Deposition (2017)
  • Author(s): Shun Osaka, Osamu Kubo, Kazuki Takahashi, Masaya Oda, Kentaro Kaneko, Hiroshi Tabata, Shizuo Fujita, Mitsuhiro Katayama
  • Journal Title: Surface Science Volume: 660 Pages: 9-15
  • DOI: 10.1016/j.susc.2017.02.002
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Pressure-Sensing Properties of Single-Walled Carbon Nanotubes Covered with a Corona-Poled Piezoelectric Polymer (2016)
  • Author(s): Takeshi Ikawa, Hiroshi Tabata, Takeshi Yoshizawa, Ken Utaka, Osamu Kubo, Mitsuhiro. Katayama
  • Journal Title: Applied Physics Letters Volume: 109 Issue: 3 Pages: 0331041-5
  • DOI: 10.1063/1.4959091
  • Peer Reviewed
• [Journal Article] Structural and Electronic Properties of Barium-Induced Surfaces on Si(111): Barium Disilicide and Si(111) 2 × 8 Reconstruction (2016)
  • Author(s): O. Kubo, T. Otsuka, S. Okasaka, S. Osaka, H. Tabata and M. Katayama
  • Journal Title: Japanese Journal of Applied Physics Volume: 55
  • NAID: 210000146978
  • Peer Reviewed
• [Presentation] Gas response characteristics of graphene/MoS2 heterojunction to NO2 (2016)
  • Author(s): H. Tabata, Y. Sato, O. Kubo, M. Katayama
  • Organizer: 29th International Microprocesses and Nanotechnology Conference (MNC2016)
  • Place of Presentation: ANA Crowne Plaza Kyoto, Kyoto, Japan
  • Year and Date: 2016-11-08
  • Int'l Joint Research
• [Presentation] P(VDF-TrFE)被膜SWNT薄膜のポーリングによる電気特性制御 (2016)
  • Author(s): 田代征久, 田畑博史, 久保理, 片山光浩
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 新潟県新潟市 朱鷺メッセ
  • Year and Date: 2016-09-13
• [Presentation] Gas-sensing response of graphene/MoS2 van der Waals heterostructure (2016)
  • Author(s): H. Tabata, Y. Sato, K. Oi, T. Asashita, O. Kubo, M. Katayama
  • Organizer: 7th Graphene and 2D materials Satellite Symposium of 17th International Conference on the Science and Applications of Nanotubes and Low-dimensional Materials
  • Place of Presentation: University of Vienna, Austria
  • Year and Date: 2016-08-13
  • Int'l Joint Research
• [Presentation] 揮発性化合物検知に向けたSWNTキャパシタの作製と応答特性評価 (2016)
  • Author(s): 杉浦知樹, 田畑博史, 久保理, 片山光浩
  • Organizer: 応用物理学会関西支部平成２８年度第１回講演会
  • Place of Presentation: 大阪府池田市 産業技術総合研究所関西センター
  • Year and Date: 2016-06-17
• [Presentation] MoS2－グラフェンへテロ構造のガス応答に関する研究 (2016)
  • Author(s): 麻下卓嗣, 佐藤雄太, 田畑博史, 大井皓平, 久保理, 片山光浩
  • Organizer: 応用物理学会関西支部平成２８年度第１回講演会
  • Place of Presentation: 大阪府池田市 産業技術総合研究所関西センター
  • Year and Date: 2016-06-17
• [Presentation] MoS2-単層グラフェンへテロ構造の局所ガス応答特性評価 (2016)
  • Author(s): 佐藤雄太、大井皓平、麻下卓嗣、田畑博史、久保理、片山光浩
  • Organizer: 第６３回応用物理学会春季学術講演会
  • Place of Presentation: 東工大 大岡山キャンパス
  • Year and Date: 2016-03-20
• [Presentation] PTCDAプロモータを用いたCVD法によるMoS2薄膜の成長と評価 (2016)
  • Author(s): 大井皓平、田畑博史、久保理、片山光浩
  • Organizer: 第６３回応用物理学会春季学術講演会
  • Place of Presentation: 東工大 大岡山キャンパス
  • Year and Date: 2016-03-20
• [Presentation] MoS2/グラフェンヘテロ構造を用いたFETの作製とガス応答特性評価 (2015)
  • Author(s): 大井 皓平, 佐藤 雄太, 田畑 博史, 久保 理, 片山 光浩
  • Organizer: 応用物理学会関西支部平成27年度第2回講演会「ナノスケール材料の構造・物性制御技術の最前線 ～関西若手研究者を中心としたイノベーションの発信～」
  • Place of Presentation: 大阪大学 中ノ島センター
  • Year and Date: 2015-09-30