| Project/Area Number |
15K21684
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Crystal engineering
Electronic materials/Electric materials
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| Research Institution | Kanagawa Industrial Technology Center |
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Principal Investigator |
KUROUCHI Masahito 神奈川県産業技術センター, 電子技術部, 主任研究員 (10452187)
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| Research Collaborator |
YASUI Manabu 神奈川県産業技術センター, 電子技術部, 主任研究員
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2016: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2015: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
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| Keywords | 窒化物半導体 / 窒化アルミニウムガリウム / オーミック電極 / 電子線リソグラフィ / 電極 / 微細加工 |
|---|
| Outline of Final Research Achievements |
Difficulty in forming low-resistance ohmic contacts of deep UV light emitting diodes (LEDs) using Al-rich AlGaN is an important issue. Ohmic contacts on N-polar AlGaN plane have high potential because N-vacancies are generated efficiently in N-polar AlGaN plane by annealing process due to high evaporation rate of N. N-polar plane can be exposed by formation of 3-dimentional structures. Purpose of present study is to develop processing techniques of such 3-dimentional structures. In order to form high density patterns, electron beam lithography was investigated. Exposure conditions of half-pitch 50nm line-and-space patterns were examined. The relationship among dose, exposure area width and pattern size was fitted by 2-variable 2nd order functions, giving a fine fit. Conditions of proximity effect correction (PEC) are estimated from fitting parameters obtained from experimental data.
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