Nanoscale properties in strongly correlated oxide 3D nanostructures and their application for an electronic phase change device (Fostering Joint International Research)
| Project/Area Number |
15KK0236
|
|---|
| Research Category |
Fund for the Promotion of Joint International Research (Fostering Joint International Research)
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Applied materials
|
|---|
| Research Institution | Osaka University |
|---|
Principal Investigator |
|
|---|
| Research Collaborator |
RAMANATHAN Shriram Purdue University, Materials Engineering, 教授
ZAO Fan Purdue University, Materials Engineering, Post Doctoral Fellow
SUN Yifei Purdue University, Materials Engineering, Post Doctoral Fellow
RAMADOSS Koushik Purdue University, Materials Engineering, Post Doctoral Fellow
KANKI Teruo 大阪大学, 産業科学研究所, 准教授
HATTORI Azusa 大阪大学, 産業科学研究所, 助教
YAMAMOTO Mahito 大阪大学, 産業科学研究所, 助教
|
|---|
| Project Period (FY) |
2016 – 2017
|
| Project Status |
Completed (Fiscal Year 2017)
|
| Budget Amount *help |
¥13,780,000 (Direct Cost: ¥10,600,000、Indirect Cost: ¥3,180,000)
|
|---|
| Keywords | 遷移金属酸化物 / 強相関電子系 / 金属‐絶縁体相転移 / ナノデバイス / イオンドーピング / ハイブリッドゲート / 酸化物エレクトロニクス / 電界効果トランジスタ / ナノ構造 / 電子相変化 / 化学反応トランジスタ |
|---|
| Outline of Final Research Achievements |
During September 25, 2016 to May 12th, 2017, the principal Investigator stayed at Prof. Ramanathan Lab., Purdue University, USA for collaborative research. It was discovered that H+ and Li+ dopings by Pt catalyst method enhanced electrical resistivity in EuNiO3 and SmNiO3 films by 5 to 6 orders of magnitude. In Epitaxial VO2 film, H+ doping enhanced their electrical resistivity, which is different tendency previously reported in polycrystalline VO2 films. In addition, we successfully observed electric field induced reversible and nonvolatile electric resistance changes in micropatterned SmNiO3 and EiNiO3 devices with asymmetric Pt and Au electrodes.
|
Report
(3 results)
Research Products
(7 results)
