Selective epitaxial growth of nitride nano-hetero structures on patterned silicon substrate

• Project/Area Number: 16106001
• Research Category: Grant-in-Aid for Scientific Research (S)
• Allocation Type: Single-year Grants
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Nagoya University
• Principal Investigator: SAWAKI Nobuhiko Nagoya University, 大学院・工学研究科, 教授 (70023330)
• Co-Investigator(Kenkyū-buntansha): YAMAGUCHI Masahito 名古屋大学, 大学院・工学研究科, 准教授 (20273261) ; TANAKA Shigeyasu 名古屋大学, エコトピア科学研究所, 准教授 (70217032) ; HONDA Yoshio 名古屋大学, 大学院・工学研究科, 助教 (60362274)
• Project Period (FY): 2004 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥115,960,000 (Direct Cost: ¥89,200,000、Indirect Cost: ¥26,760,000); Fiscal Year 2008: ¥7,020,000 (Direct Cost: ¥5,400,000、Indirect Cost: ¥1,620,000); Fiscal Year 2007: ¥13,780,000 (Direct Cost: ¥10,600,000、Indirect Cost: ¥3,180,000); Fiscal Year 2006: ¥11,310,000 (Direct Cost: ¥8,700,000、Indirect Cost: ¥2,610,000); Fiscal Year 2005: ¥13,910,000 (Direct Cost: ¥10,700,000、Indirect Cost: ¥3,210,000); Fiscal Year 2004: ¥69,940,000 (Direct Cost: ¥53,800,000、Indirect Cost: ¥16,140,000)
• Keywords: 窒化物半導体 / ナノへテロ構造 / MOVPE / 選択成長 / 不純物ドーピング / GaN / ナノヘテロ構造 / ファセット成長 / 光デバイス / 面間拡散 / 光導波路 / シリコン基板 / 時間分解分光 / Si基板 / 界面構造 / 電子線ホログラフィー

Research Abstract

加工Si基板上への選択MOVPE法により、(0001)、(1-101)、(11-22)ならびに(11-20)面を有するAlGaN/GaN、GaN/InGaN微細ヘテロ構造を作製した。この構造は自然形成原理に従って形成されるため、表面平坦性、結晶性に優れることを明らかにした。特に、窒素を最表面とする(1-101)半極性面GaNは不純物ドーピング特性に優れ、Mgドーピングで高い正孔濃度が得られ、炭素ドーピングでもp形伝導が得られることを明らかにした。Si基板上に半極性GaN-LEDとストライプレーザ構造を作製し、光集積デバイスのためのナノへテロエピタキシの有効性を実証した

Research Products

• [Journal Article] Growth and properties of semi-polar GaN on a patterned silicon substrate (2009)
  • Author(s): N. Sawaki, T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi and T. Tanaka
  • Journal Title: J. Crystal Growth Online 14 Jan. doi.10.1016 Pages: 1-8
  • Peer Reviewed
• [Journal Article] Growth of non-polar (11-20)GaN on a patterned (110)Si substrate by selective MOVPE (2008)
  • Author(s): T.Tanikawa, D.Rudolph, T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki
  • Journal Title: J.Crystal Growth 310 Pages: 4999-5002
  • Peer Reviewed
• [Journal Article] Fabrication and properties of semi- polar (1-101) and (11-22)InGaN/GaN MQW light emitting diode on patterned Si substrates (2008)
  • Author(s): T.Hikosaka, T.Tanikawa, Y.Honda, M.Yamaguchi, and N.Sawaki
  • Journal Title: phys. sta. sol.(c) 5 Pages: 2234-2237
  • Peer Reviewed
• [Journal Article] Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE (2008)
  • Author(s): T.Tanikawa, T.Hikosaka, Y.Honda, M.Yamaguchi and N.Sawaki
  • Journal Title: phys. sta. sol.(c) 5 Pages: 2966-2968
  • Peer Reviewed
• [Journal Article] Time-resolved spectroscopy in an undoped GaN (1-101) (2008)
  • Author(s): E-H., Kim, 他
  • Journal Title: phys. stat. sol. (c) 5 Pages: 367-369
  • Peer Reviewed
• [Journal Article] Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN MQW light emitting diode on patterned Si substrates (2008)
  • Author(s): T. Hikosaka, 他
  • Journal Title: phys. sta. sol. (c) 5 Pages: 2234-2237
  • Peer Reviewed
• [Journal Article] Energy relaxation process of photo-generated carriers in Mgdoped (0001) GaN and (1-101)GaN (2008)
  • Author(s): J. Saida, 他
  • Journal Title: phys. sta. sol. (c) 5 Pages: 1746-1749
  • Peer Reviewed
• [Journal Article] Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE (2008)
  • Author(s): T. Tanikawa, 他
  • Journal Title: phys. sta. sol. (c) 5 Pages: 2966-2968
  • Peer Reviewed
• [Journal Article] Reduction of Mg segregation in a metalorganic vapor phase epitaxially grown GaN layer by a low-temperature AIN interlayer (2008)
  • Author(s): K. Tomita, 他
  • Journal Title: J. Appl. Phys. 104 Pages: 14906-14906
  • Peer Reviewed
• [Journal Article] Selective MOVPE of III-nitrides and device fabrication on an Si substrate (2008)
  • Author(s): N. Sawaki
  • Journal Title: Proc. SPIE 7279 Pages: 727902-727902
• [Journal Article] Al doping in (1-101)GaN films grownon patterned (001)Si substrate (2007)
  • Author(s): T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki, J
  • Journal Title: Appl. Phys 101.103513 Pages: 1-5
  • Peer Reviewed
• [Journal Article] Transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN hetero- structures (2007)
  • Author(s): X.X.Han, Y.Honda, T.Narita, M.Yamaguchi, and N.Sawaki, J
  • Journal Title: Phys.: Condens. Matter 19, 046204 Pages: 1-11
  • Peer Reviewed
• [Journal Article] Mg doping in (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE (2007)
  • Author(s): T.Hikosaka, N.Koide, Y.Honda, M.Yamaguchi, and N.Sawaki
  • Journal Title: J.Crystal Growth 298 Pages: 207-210
  • Peer Reviewed
• [Journal Article] Series resistance of n-Si/AlGaN/GaN structure grown by MOVPE (2007)
  • Author(s): Y.Honda, S.Kato, M.Yamaguchi, and N.Sawaki
  • Journal Title: phys. stat. sol 4 Pages: 2740-2743
  • Peer Reviewed
• [Journal Article] Mg doping in (1-101) GaN grown on a 7-degree-off oriented (001) Si subst rate by selective MOVPE (2007)
  • Author(s): T. Hikosaka, 他
  • Journal Title: J. Crystal Growth 298 Pages: 207-210
  • Peer Reviewed
• [Journal Article] MOVPE growth and cathodoluminescence properties of GaN microcrystal co-doped with Zn and Si (2007)
  • Author(s): Y. Honda, 他
  • Journal Title: J. Crystal Growth 300 Pages: 110-113
  • Peer Reviewed
• [Journal Article] Al doping in (1-101) GaN films grown on patterned (001) Si substrate (2007)
  • Author(s): T. Eikosaka, 他
  • Journal Title: J. Appl. Phys. 101
  • Peer Reviewed
• [Journal Article] Time-resolved photoluminescence spectroscopy in AIGaN/GaN SQW structure grown on a (111) Si substrate (2007)
  • Author(s): E-H. Kim, 他
  • Journal Title: physica status solidi (c) 4 Pages: 2838-2841
  • Peer Reviewed
• [Journal Article] Acceptor Level due to Carbon in a (1-101) AIGaN (2007)
  • Author(s): N. Sawaki, 他
  • Journal Title: AIP Conf. Proc. 893(CD-ROM) Pages: 281-281
• [Journal Article] Subband structure and transport properties of two-dimensional electrongas in AlxGa1-xN/GaN heterostructures (2007)
  • Author(s): X-X. Han, 他
  • Journal Title: physica status solidi (c) 4 Pages: 2334-2337
  • Peer Reviewed
• [Journal Article] The surface diffusion of Ga species on an AIGaN facet structure in low pressure MOVPE (2007)
  • Author(s): T. Narita, 他
  • Journal Title: physica status solidi (c) 4 Pages: 2506-2509
  • Peer Reviewed
• [Journal Article] Transport properties of the two-dimensional electron gas in AlxGal?xN/GaN heterostructures (2007)
  • Author(s): Xiuxun Han, 他
  • Journal Title: J. Phys.: Condens. Matter 19
  • Peer Reviewed
• [Journal Article] p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented(001)Si substrate by selective MOVPE (2006)
  • Author(s): T.Hikosaka, N.Koide, Y.Honda, M.Yamaguchi, and N.Sawaki
  • Journal Title: phys. stat.sol 3 Pages: 1425-1428
  • Peer Reviewed
• [Journal Article] Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure (2006)
  • Author(s): H.Kondo, N.Koide, Y.Honda, M.Yamaguchi, N.Sawaki
  • Journal Title: Jap. J. Appl. Phys. 45・5A Pages: 4015-4017
  • NAID: 40007248571
• [Journal Article] Cathodoluminescence Properties of InGaN codoped with Zn and Si (2006)
  • Author(s): Y.Honda, Y.Yanase, M.Yamaguchi, N.Sawaki
  • Journal Title: phys. stat. sol. (c) 3・6 Pages: 1915-1918
• [Journal Article] p-type conduction in a C-doped (1-101) GaN grown on a 7-degree-off oriented (001) Si substrate by selective MOVPE (2006)
  • Author(s): T.Hikosaka, N.Koide, Y.Honda, M.Yamaguchi, N.Sawaki
  • Journal Title: phys. stat. sol. (c) 3・6 Pages: 1425-1428
• [Journal Article] The surface diffusion of Ga on an A1GaN/GaN stripe structure in the selective MOVPE (2006)
  • Author(s): T.Narita, Y.Honda, M.Yamaguchi, N.Sawaki
  • Journal Title: phys. stat. sol. (b) 243・7 Pages: 1665-1668
• [Journal Article] Carbon Incorporation on (1 101) Facet of A1GaN in Metal Organic Vapor Phase Epitaxy (2006)
  • Author(s): N.Koide, T.Hikosaka, Y.Honda, M.Yamaguchi, N.Sawaki
  • Journal Title: Jap. J. Appl. Phys. 45・10A Pages: 7655-7660
• [Journal Article] Optical phonon-modes and electron-phonon interaction in a quantum dot (2006)
  • Author(s): M.Ishidal, M.Yamaguchi, N.Sawaki
  • Journal Title: Springer Proceedings in Physics Series 110 Pages: 253-256
• [Journal Article] Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet (2005)
  • Author(s): T.Narita, Y.Honda, M.Yamaguchi, and N.Sawaki
  • Journal Title: phys. stat. sol 2 Pages: 2349-2352
  • Peer Reviewed
• [Journal Article] Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet (2005)
  • Author(s): T.Narita, Y.Honda, M.Yamaguchi, N.Sawaki
  • Journal Title: Physica Stata Solidi 2 Pages: 2349-2352
• [Journal Article] Uniform growth of GaN on AlN templated (111)Si substrate by HVPE (2005)
  • Author(s): Y.Honda, M.Okano, M.Yamaguchi, N.Sawaki
  • Journal Title: Physica Stata Solidi 2 Pages: 2125-2128
• [Journal Article] Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001) Si by selective MOVPE (2005)
  • Author(s): T.Hikosaka, Y.Honda, N.Koide, M.Yamaguchi, N.Sawaki
  • Journal Title: IOP Conf.Series 184 Pages: 251-254
• [Journal Article] Incorporation of carbon on a (1-101)facet of GaN by MOVPE (2005)
  • Author(s): N.Koide, T.Hikosaka, Y.Honda, M.Yamaguchi, N.Sawaki
  • Journal Title: J.Cryst.Growth 284 Pages: 341-346
• [Journal Article] Doping of GaN, AlGaN by Mixed-Source HVPE (2005)
  • Author(s): J.Y.Yi, K.H.Kim, H.J.Lee, M.Yang, H.S.Ahn他
  • Journal Title: IOP Conf.Series 184 Pages: 373-376
• [Journal Article] Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy (2005)
  • Author(s): H.S.Ahn, K.H.Kim, M.Yang, J.Y.Yi, H.J.Lee他
  • Journal Title: Applied Surface Science 243 Pages: 178-182
• [Journal Article] Optical and electrical properties of (1-101)GaN grown on a 7°off-axis (001)Sisubstrate (2004)
  • Author(s): T.Hikosaka, T.Narita, Y.Honda, M.Yamaguchi, and N.Sawaki
  • Journal Title: Appl. Phys. Lett 84 Pages: 4717-4719
  • Peer Reviewed
• [Journal Article] Photocurrent spectroscopy of a (0001)GaN/AlGaN/(111)Si heterostructure (2004)
  • Author(s): Y.Kuroiwa
  • Journal Title: Physica E 21 Pages: 787-792
• [Journal Article] Optical and electrical properties of (1-101)GaN grown on a 7°off-axis (001)Si substrate (2004)
  • Author(s): T.Hikosaka
  • Journal Title: Appl.Phys.Lett. 84・23 Pages: 4717-4719
• [Journal Article] Electron holography study of a GaN/AlGaN interface and a GaN crystal on Si substrates (2004)
  • Author(s): S.Tanaka
  • Journal Title: Proc. 8th Asia-Pacific Electron Microscopy Conference Pages: 507-508
• [Journal Article] Optical spectra of GaN/InGaN/GaN MQW structure grown on a (1-101) GaN facet (2004)
  • Author(s): E.H.Kim
  • Journal Title: phys.stat.sol.(c) 1 Pages: 2512-2515
• [Journal Article] Fabrication and optical properties of GaN micro-prism array on an Si substrate (2004)
  • Author(s): A.Nishioka
  • Journal Title: Proc. of Int. Conf. on Electrical Engineering 2004 3,1 Pages: 297-300
• [Journal Article] Electrical and optical properties of (1-101)GaN grown on a 7 degree off oriented (001) Si by selective MOVPE (2004)
  • Author(s): N.Sawaki
  • Journal Title: Proc. 5th Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipment Pages: 30-35
• [Presentation] DAP emission band in a carbon doped (1-101)GaN grown on (001) Si substrate (2008)
  • Author(s): Y. Honda, 他
  • Organizer: Intern. Workshop Nitride Semiconductor 2008
  • Place of Presentation: Montreux (Swiss)
  • Year and Date: 2008-10-06
• [Presentation] Growth and properties of semi-polar GaN on a patterned silicon substrate (Invited) (2008)
  • Author(s): N.Sawaki, T.Hikosaka, N.Koide, Y.Honda, and Yamaguchi
  • Organizer: ISGN-2
  • Place of Presentation: Izu
  • Year and Date: 2008-07-09
• [Presentation] Compound semiconductors- The crystal growth and creation of new functions- (2008)
  • Author(s): N. Sawaki
  • Organizer: 27 th Electronic Materials. Symposium
  • Place of Presentation: Izu (Japan)
  • Year and Date: 2008-07-09
• [Presentation] Growth and properties of semi-polar GaN on a patterned silicon substrate (2008)
  • Author(s): N. Sawaki, 他
  • Organizer: 2nd Intern. Symp. Growth of Nitrides
  • Place of Presentation: Izu (Japan)
  • Year and Date: 2008-07-08
• [Presentation] HVPE growth of semi-polar (11-22) GaN on GaN template (113) Si substrate (2008)
  • Author(s): Y. Suzuki, 他
  • Organizer: 2nd Intern. Symp. Growth of Nitrides
  • Place of Presentation: Izu (Japan)
  • Year and Date: 2008-07-08
• [Presentation] Reduction of Dislocations in a (11-22) GaN grown by selective MOVPE on. (113) Si (2008)
  • Author(s): T. Tanikawa, 他
  • Organizer: 2nd Intern. Symp. Growth of Nitrides
  • Place of Presentation: Izu (Japan)
  • Year and Date: 2008-07-08
• [Presentation] Mg Segregation in (1-101)GaN Grown on a 7 degree off-axis (001)Si Substrate by MOVPE (2008)
  • Author(s): K. Tomita, 他
  • Organizer: 2nd Intern. Symp. Growth of Nitrides
  • Place of Presentation: Izu (Japan)
  • Year and Date: 2008-07-08
• [Presentation] MOVPE Growth and Properties of GaN on (111)Si Us ing an AlInN Intermediate Layer (2008)
  • Author(s): M. Irie, 他
  • Organizer: 2nd Intern. Symp. Growth of Nitrides
  • Place of Presentation: Izu (Japan)
  • Year and Date: 2008-07-08
• [Presentation] Maskless selective growth of semi-polar (11-22) GaN on Si (311) substrate by metal organic vapor phase epitaxy. (2008)
  • Author(s): M. Yang, 他
  • Organizer: 2nd Intern. Symp. Growth of Nitrides
  • Place of Presentation: Izu (Japan)
  • Year and Date: 2008-07-08
• [Presentation] Growth of non-polar (11-20) GaN on a patterned (110)Si substrate by selective MOVPE (2008)
  • Author(s): T. Tanikawa, 他
  • Organizer: 14 th Intern. Conf. MOVPE
  • Place of Presentation: Metz (France)
  • Year and Date: 2008-06-03
• [Presentation] Selective MOVPE of III-nitrides and device fabrication on an Si substrate (2008)
  • Author(s): N.Sawaki, N.Sawaki
  • Organizer: POEM2008
  • Place of Presentation: Wuhan
• [Presentation] Compound semiconductors- The crystal growth and creation of new functions-(Plenary) (2008)
  • Author(s): N.Sawaki
  • Organizer: EMS-27
  • Place of Presentation: Izu
• [Presentation] 加工シリコン基板上への半極性GaNの選択成長と物性 (2007)
  • Author(s): 彦坂年輝、谷川智之、本田善央、山口雅史、澤木宣彦
  • Organizer: JSPS-162研究会
  • Place of Presentation: 川口屋リバーサイドホテル
  • Year and Date: 2007-12-10
• [Presentation] 窒化物半導体材料とデバイスの将来展望 (2007)
  • Author(s): 澤木宣彦
  • Organizer: 第17回SiCおよび関連ワイドギャップ半導体研究会
  • Place of Presentation: 愛知県女性総合センター
  • Year and Date: 2007-11-29
• [Presentation] 窒化物半導体材料とデバイスの将来展望(プレナリー) (2007)
  • Author(s): 澤木宣彦
  • Organizer: SiCおよび関連ワイドギャップ半導体研究会
  • Place of Presentation: 愛知県女性総合センター
• [Presentation] Energy relaxation process of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN (2007)
  • Author(s): J.Saida, EH.Kim, T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki
  • Organizer: ICNS-7
  • Place of Presentation: Las Vegas
• [Presentation] Time-resolved spectroscopy in an undoped GaN (1-101) (2007)
  • Author(s): EH.Kim, T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki
  • Organizer: HCIS-15
  • Place of Presentation: Tokyo
• [Presentation] 青山健太郎, 田中成泰, 市橋幹雄, 本田善央, 澤木宣彦 (2007)
  • Author(s): 超高圧STEM-EBICによるGaN/Si界面の電気的特性の解析
  • Organizer: 第54回応用物理学関係連合講演会
  • Place of Presentation: 青山学院大学
• [Presentation] Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN MQW light emitting diode on patterned Si substrates (2007)
  • Author(s): T. Hikosaka, 他
  • Organizer: 7 th Intern. Conf. on Nitride Semiconductors (ICNS-7)
  • Place of Presentation: Las Vegas (USA)
• [Presentation] Energy relaxation process of photo-generated carriers in Mg doped (0001) GaN and (1-101) GaN (2007)
  • Author(s): N. Sawaki, 他
  • Organizer: 7 th Intern. Conf. on Nitride Semiconductors (ICNS-7)
  • Place of Presentation: Las Vegas (USA)
• [Presentation] Growth of semi-polar (11-22) GaN on a (113) Si substrate by selective MOVPE (2007)
  • Author(s): T. Tanikawa, 他
  • Organizer: Intern. Symposium Compound Semiconductors (ISCS) 2007
  • Place of Presentation: Kyoto (Japan)
• [Presentation] Acceptor Level due to Carbon in a (1-101)AlGaN (2006)
  • Author(s): N.Sawaki, N.Koide, T.Hikosaka, Y.Honda, and M.Yamaguchi
  • Organizer: 28th ICPS
  • Place of Presentation: Wien
• [Patent(Industrial Property Rights)] 窒化物半導体構造およびその製造方法 (2007)
  • Inventor(s): 澤木宣彦、本田善央、彦坂年輝、谷川智之
  • Industrial Property Rights Holder: 国立大学法人名古屋大学
  • Filing Date: 2007-06-07