Silicon single-electron devices : Time-space control of transport and development of new functions

• Project/Area Number: 16106006
• Research Category: Grant-in-Aid for Scientific Research (S)
• Allocation Type: Single-year Grants
• Research Field: Electron device/Electronic equipment
• Research Institution: Shizuoka University
• Principal Investigator: TABE Michiharu Shizuoka University, 電子工学研究所, 教授 (80262799)
• Co-Investigator(Kenkyū-buntansha): IKEDA Hiroya 静岡大学, 電子工学研究所, 准教授 (00262882) ; ONO Yukinori NTT, 物性科学基礎研究所, 主任研究員 (80374073) ; AMEMIYA Yoshihito 北海道大学, 工学研究科, 教授 (80250489) ; ISHIKAWA Yasuhiko 静岡大学, 電子工学研究所, 助手 (60303541) ; RATNO Nuryadi 静岡大学, 創造科学技術大学院, 助教 (70402245)
• Project Period (FY): 2004 – 2007
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥96,590,000 (Direct Cost: ¥74,300,000、Indirect Cost: ¥22,290,000); Fiscal Year 2007: ¥10,920,000 (Direct Cost: ¥8,400,000、Indirect Cost: ¥2,520,000); Fiscal Year 2006: ¥8,190,000 (Direct Cost: ¥6,300,000、Indirect Cost: ¥1,890,000); Fiscal Year 2005: ¥50,180,000 (Direct Cost: ¥38,600,000、Indirect Cost: ¥11,580,000); Fiscal Year 2004: ¥27,300,000 (Direct Cost: ¥21,000,000、Indirect Cost: ¥6,300,000)
• Keywords: 少数電子素子 / マイクロ・ナノデバイス / 量子ドット / トンネル現象 / 走査プローブ顕微鏡 / シリコン / 単電子デバイス / マルチドット

Research Abstract

本研究においては、これまで(1)ランダム多重トンネル接合系における単電子転送の実証とそのシミュレーション解析、(2)マルチドット型単電子FET 特性の可視域光子との相互作用解明、(3)極低温KFM によるチャネル内の単一リン・ボロンドーパントの検出、(4)転位網利用周期ポテンシャルを利用した単電子特性の実現、を行った。これらを総合することにより、ランダム系シリコン多重ドット単電子デバイスの輸送制御に見通しが得られた。

Research Products

• [Journal Article] Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-On-Insulator Field-Effect Transistors (2009)
  • Author(s): D. Moraru, M. Ligowski, K. Yokoi, T. Mizuno and M. Tabe
  • Journal Title: APEX, to be published
  • NAID: 10025087024
  • Peer Reviewed
• [Journal Article] Single-Gated Single-Electron Transfer in Nonuniform Arrays of Quantum Dots (2009)
  • Author(s): K. Yokoi, D. Moraru, M. Ligowski and M. Tabe
  • Journal Title: Jpn. J. Appl. Phys Vol.48
  • NAID: 120001820459
  • Peer Reviewed
• [Journal Article] Observation of individual dopants in a thin silicon layer by low temperture Kelvin Prove Force Microscope (2008)
  • Author(s): M. Ligowski, D. Moraru, M. Anwar, T. Mizuno, R. Jablonski and M. Tabe
  • Journal Title: Appl. Phys. Lett Vol.93, No.14
  • Peer Reviewed
• [Journal Article] Si Multidot FETs for Single-Electron Transfer and Single-Photon Detection (2008)
  • Author(s): M. Tabe
  • Journal Title: ACTA PHYSICA POLONICA A 113 Pages: 811-814
  • Peer Reviewed
• [Journal Article] Thermal agglomeration of ultrathin silicon-on-insulator layers:crystalline orientation dependence (2008)
  • Author(s): Youjun Fan
  • Journal Title: Japanese Journal Applied Physics 47 Pages: 1461-1464
  • Peer Reviewed
• [Journal Article] Quantized electron transfer through random multiple tunnel junctions in phosphorous-doped silicon nanowires (2007)
  • Author(s): D. Moraru, Y. Ono, H. Inokawa and M. Tabe
  • Journal Title: Phys. Rev. B Vol.76, no.7
  • Peer Reviewed
• [Journal Article] Detection of field-induced single -acceptor ionization in Si by singleholetunneling transistor (2007)
  • Author(s): Z. A. Burhanudin, R. Nuryadi and M. Tabe
  • Journal Title: Appl. Phys. Lett. Vol.91, No.4
  • Peer Reviewed
• [Journal Article] Detection of field-induced single-acceptor ionization in Si by single-holetunneling transistor (2007)
  • Author(s): Zainal A. Burhanudin
  • Journal Title: Applied Physics Letters 91
  • Peer Reviewed
• [Journal Article] Quantized electron transfer through random multiple tunnel junctions in phosphorous-doped silicon nanowires (2007)
  • Author(s): Daniel Moraru
  • Journal Title: Physical Review B 76
  • Peer Reviewed
• [Journal Article] Numerical study of turnstile operation in random-multidot-channel field-effect transistor (2006)
  • Author(s): H. Ikeda and M. Tabe
  • Journal Title: Appl. Phys. Lett. Vol.91, No.4
  • Peer Reviewed
• [Journal Article] Single-electron tunneling in a silicon-on-insulator layer embedding an artificial dislocation network (2006)
  • Author(s): Y. Ishikawa, C. Yamamoto and M. Tabe
  • Journal Title: Appl. Phys. Lett. Vol.88
  • NAID: 120000796478
  • Peer Reviewed
• [Journal Article] Single-photon-induced random telegraph signal in a two-dimensional multiple-tunnel-junction array (2006)
  • Author(s): R. Nuryadi, Y. Ishikawa and M. Tabe
  • Journal Title: Phys. Rev. 73
  • NAID: 120000795244
  • Peer Reviewed
• [Journal Article] Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer (2006)
  • Author(s): Zainal A.Burhanudin, Ratno Nuryadi, Yasuhiko Ishikawa, Michiharu Tabe
  • Journal Title: Thin Solid Films 508 Pages: 235-238
• [Journal Article] Numerical study of turnstile operation in random-multidot-channel field-effect transistor (2006)
  • Author(s): Hiroya Ikeda, Michiharu Tabe
  • Journal Title: Journal of Applied Physics 99
• [Journal Article] Single-photon-induced random-telegraph-signal in a two-dimensional multiple-tunnel-junction array (2006)
  • Author(s): Ratno Nuryadi, Yasuhiko Ishikawa, Michiharu Tabe
  • Journal Title: Physical Review B 73・4
  • NAID: 120000795244
• [Journal Article] Single-electron tunneling in a silicon-on-insulator layer embedding an artificial dislocation network (2006)
  • Author(s): Yasuhiko Ishikawa, Chihiro Yamamoto, Michiharu Tabe
  • Journal Title: Applied Physics Letters 88・7
  • NAID: 120000796478
• [Journal Article] Fowler-Nordheim Current Oscillations in Si(111)/SiO_2/twisted-Si(111) Tunneling Structures (2006)
  • Author(s): Daniel Moraru, Hiroshi Kato, Seiji Horiguchi, Yasuhiko Ishikawa, Hiroya Ikeda, Michiharu Tabe
  • Journal Title: Japanese Journal of Applied Physics 45・11
  • NAID: 10018158638
• [Journal Article] Numerical Study of Turnstile Operation in Random-Multidot-Channel Field-Effect Translator (2006)
  • Author(s): Hiroya Ikeda, Michiharu Tabe
  • Journal Title: Journal of Applied Physics (掲載決定)
• [Journal Article] Conductivity Enhancement in Thin Silicon-on-Insulator Layer Embedding Artificial Dislocation Network (2005)
  • Author(s): Yasuhiko Ishikawa, Kazuaki Yamauchi, Chihiro Yamamoto, Michiharu Tabe
  • Journal Title: Materials Research Society Symposium Proceedings 864
• [Journal Article] Thermally induced formation of Si wire array on an ultrathin (111) silicon-on-insulator substrate (2005)
  • Author(s): Zainal A.Burhanudin, Ratno Nuryadi, Yasuhiko Ishikawa, Michihar Tabe
  • Journal Title: Applied Physics Letters 87・12
• [Journal Article] Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in Si/SiO_2 double-barrier structure (2005)
  • Author(s): Yasuhiko Ishikawa, Hiroya Ikeda, Michiharu Tabe
  • Journal Title: Applied Physics Letters 86・1
• [Journal Article] Current fluctuation in single-hole transport through a two-dimensional Si multidot (2005)
  • Author(s): Ratno Nuryadi, Hiroya Ikeda, Yasuhiko Ishikawa, Michiharu Tabe
  • Journal Title: Applied Physics Letters 86・13
• [Journal Article] Diffusion of Li in the silicon oxide films and evaluation of Li-induced surface potential (2005)
  • Author(s): Masahiko Maeda, Teruyoshi Watanabe, Yasuhiro Imai, Yasuhiko Ishikawa, Michiharu Tabe
  • Journal Title: Applied Surface Science (掲載決定)
• [Journal Article] Photoinduced Effects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor (2004)
  • Author(s): Hiroya Ikeda, Ratno Nuryadi, Yasuhiko Ishikawa, Michiharu Tabe
  • Journal Title: Japanese Journal of Applied Physics 43・6B
  • NAID: 10013161190
• [Presentation] Observation of discrete dopant potential and its application to Si single-electron devices (2009)
  • Author(s): M. Tabe, D. Moraru, M. Ligowski, M. Anwar, K. Yokoi, R. Jablonski and T. Mizuno
  • Organizer: 6th International Conference on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Los Angeles, California, USA
• [Presentation] Si single-electron devices : manipulation of individual dopants manipulation of individual dopants (2008)
  • Author(s): M. Tabe
  • Organizer: The 5th International Workshop on Nanoscale Semiconductor Devices (IWNSD)
  • Place of Presentation: Seoul, Korea
  • Year and Date: 2008-05-16
• [Presentation] Effects of assistant electrons on single-electron transfer in random multidot arrays (2008)
  • Author(s): D. Moraru
  • Organizer: 2008年春季第55回応用物理学関係連合講演会
  • Place of Presentation: 船橋
  • Year and Date: 2008-03-28
• [Presentation] Boron-ionization in Si observed by LT-KFM (2008)
  • Author(s): M. Ligowski
  • Organizer: 2008年春季第55回応用物理学関係連合講演会
  • Place of Presentation: 船橋
  • Year and Date: 2008-03-28
• [Presentation] 均一系多重ドットMOS-FETの作製と評価 (2008)
  • Author(s): 海老澤 一仁
  • Organizer: 2008年春季第55回応用物理学関係連合講演会
  • Place of Presentation: 船橋
  • Year and Date: 2008-03-28
• [Presentation] 人工転位網を内包したSOI-MOSFETの単電子輸送特性 (2008)
  • Author(s): 笠井 勇希
  • Organizer: 2008年春季第55回応用物理学関係連合講演会
  • Place of Presentation: 船橋
  • Year and Date: 2008-03-28
• [Presentation] Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electront transfer (2008)
  • Author(s): Daniel Moraru
  • Organizer: 電子情報通信学会SDM/ED合同研究会
  • Place of Presentation: 札幌
  • Year and Date: 2008-01-30
• [Presentation] Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope (2008)
  • Author(s): Maciej Ligowski
  • Organizer: 電子情報通信学会SDM/ED合同研究会
  • Place of Presentation: 札幌
  • Year and Date: 2008-01-30
• [Presentation] Application and Observation of Discrete Dopant Potential for Si Single-Electron Devices (2008)
  • Author(s): M. Tabe, D. Moraru, M. Ligowski, M. Anwar, R. Jablonski and T. Mizuno
  • Organizer: IUMRS International Conference in Asia 2008 (IUMRS-ICA
  • Place of Presentation: Nagoya
• [Presentation] Si Single-Electron SOI-MOSFETs : Interplay with Individual Dopants and Photons (2008)
  • Author(s): M. Tabe, Z. A. Burhanudin, R. Nuryadi, D. Moraru, M. Ligowski, R. Jablonski and T. Mizuno
  • Organizer: MRS fall meeting 2008
  • Place of Presentation: Boston・MA
• [Presentation] シリコンナノ構造を利用した新機能単電子デバイス (2007)
  • Author(s): 池田 浩也
  • Organizer: 第97回応用物理学会シリコンテクノロジー分科会研究集会
  • Place of Presentation: 東京
  • Year and Date: 2007-11-26
• [Presentation] Si Single-Electron Devices:Interaction with Individual Dopants and Photons (2007)
  • Author(s): Michiharu Tabe
  • Organizer: Fifth International Symposium on Control of Semiconductor Interfaces(ISCSI-V)
  • Place of Presentation: Tokyo
  • Year and Date: 2007-11-12
• [Presentation] Si Bicrystal Structures for Multijunction Single-Electron Devices (2007)
  • Author(s): Michiharu Tabe
  • Organizer: 3rd International Workshop on New Group IV Semiconductor Nanoelectronics(SiGe (C) 2007)
  • Place of Presentation: Sendai
  • Year and Date: 2007-11-08
• [Presentation] Numerical Investigation of 1D and 2D Quantum Dot Arrays with Design Optimized for Single-Electron Transfer Operation (2007)
  • Author(s): D. Moraru
  • Organizer: The 3rd Korean-Japanese Student Workshop
  • Place of Presentation: Hamamatsu
  • Year and Date: 2007-10-31
• [Presentation] Single-Electron Devices:Interaction with Individual Dopants (2007)
  • Author(s): Michiharu Tabe
  • Organizer: The 9th Takayanagi Kenjiro Memorial Symposium&The 4th International Symposium on Nanovision Science
  • Place of Presentation: Hamamatsu
  • Year and Date: 2007-10-29
• [Presentation] Manipulation of Individual Electrons in Doped Silicon Nanostructures (2007)
  • Author(s): D. Moraru
  • Organizer: The 9th Takayanagi Kenjiro Memorial Symposium&The 4th International Symposiumon Nanovision Science
  • Place of Presentation: Hamamatsu
  • Year and Date: 2007-10-29
• [Presentation] Ionization of dopant atoms in Si invested by Kelvin Probe Force Microscope (2007)
  • Author(s): M. Ligowski
  • Organizer: The 9th Takayanagi Kenjiro Memorial Symposium&The 4th International Symposiumon Nanovisi on Science
  • Place of Presentation: Hamamatsu
  • Year and Date: 2007-10-29
• [Presentation] Numerical study on single-electron transfer operation in non-homogeneous quantum-dot arrays (2007)
  • Author(s): K. Yokoi
  • Organizer: The 9th Takayanagi Kenjiro Memorial Symposium&The 4th International Symposiumon Nanovisi on Science
  • Place of Presentation: Hamamatsu
  • Year and Date: 2007-10-29
• [Presentation] Single photon detection using silicon multidots single-hole-tunneling transistor (2007)
  • Author(s): R. Nuryadi
  • Organizer: Inter-Academia 2007 and Inter-Academia Young
  • Place of Presentation: Hamamatsu
  • Year and Date: 2007-09-28
• [Presentation] Single-electron transfer through purposely designed dopant arrays in silicon (2007)
  • Author(s): Daniel Moraru
  • Organizer: Inter-Academia 2007 and Inter-Academia Young
  • Place of Presentation: Hamamatsu
  • Year and Date: 2007-09-28
• [Presentation] Low temperature Si surface potential investigation by Kelvin Probe Force Microscope (2007)
  • Author(s): M. Ligowski
  • Organizer: Inter-Academia 2007 and Inter-Academia Young
  • Place of Presentation: Hamamatsu
  • Year and Date: 2007-09-27
• [Presentation] Development of New Functional Devices using Si Nanostructures-Single-Electron Turnstile Device and Thermoelectric Device- (2007)
  • Author(s): Hiroya Ikeda
  • Organizer: Inter-Academia 2007 and Inter-Academia Young
  • Place of Presentation: Hamamatsu
  • Year and Date: 2007-09-26
• [Presentation] Nanodevice Patternig by Electron-Beam lithography(Technical Report) (2007)
  • Author(s): Takeshi Mizuno
  • Organizer: Inter-Academia 2007 and Inter-Academia Young
  • Place of Presentation: Hamamatsu
  • Year and Date: 2007-09-26
• [Presentation] Design Control of Random Dopantinduced Multiple-Tunnel-Junction Arrays for Turnstile Operation (2007)
  • Author(s): D. Moraru
  • Organizer: 2007 International Conference on Solid State Devices and Materials(SSDM 2007)
  • Place of Presentation: Tsukuba
  • Year and Date: 2007-09-21
• [Presentation] Manipulation of single-electrons in Si nanodevices-Interplay with photons and ions- (2007)
  • Author(s): M. Tabe
  • Organizer: Mechatronics 2007
  • Place of Presentation: Warsaw, Poland
  • Year and Date: 2007-09-20
• [Presentation] KFM measurements of an ultrathin SOI-FET channel surface (2007)
  • Author(s): M. Ligowski
  • Organizer: Mechatronics 2007
  • Place of Presentation: Warsaw, Poland
  • Year and Date: 2007-09-20
• [Presentation] Photon-induced single-hole-tunneling current modulation in Si multiple-tunneljunction field-effect transistor (2007)
  • Author(s): Z. A. Burhanudin
  • Organizer: 2007 International Conference on Solid State Devices and Materials(SSDM 2007)
  • Place of Presentation: Tsukuba
  • Year and Date: 2007-09-19
• [Presentation] Direct Observation of Freeze-out Effect in Si by Kelvin Probe Force Microscope (2007)
  • Author(s): R. Nuryadi
  • Organizer: 2007 International Conference on Solid State Devices and Materials(SSDM 2007)
  • Place of Presentation: Tsukuba
  • Year and Date: 2007-09-19
• [Presentation] 基板中光誘起電荷の単正孔SOI-FETに与える効果 (2007)
  • Author(s): ブルハヌディン ザイナル
  • Organizer: 2007年秋季第68回応用物理学会学術講演会
  • Place of Presentation: 札幌
  • Year and Date: 2007-09-07
• [Presentation] 一次元不均一量子ドットアレイにおける単電子転送メカニズム (2007)
  • Author(s): モラル ダニエル
  • Organizer: 2007年秋季第68回応用物理学会学術講演会
  • Place of Presentation: 札幌
  • Year and Date: 2007-09-07
• [Presentation] KFMによるSOI-FET表面電位の観察とキャリアフリーズ・アウト効果 (2007)
  • Author(s): リゴフスキ マチェイ
  • Organizer: 2007年秋季第68回応用物理学会学術講演会
  • Place of Presentation: 札幌
  • Year and Date: 2007-09-07
• [Presentation] 横方向に周期的応力を導入したSOI-MOSFETの単電子輸送特性 (2007)
  • Author(s): 笠井 勇希
  • Organizer: 2007年秋季第68回応用物理学会学術講演会
  • Place of Presentation: 札幌
  • Year and Date: 2007-09-07
• [Presentation] シリコン多重ドットトランジスタ動作時のチャネル表面電位観察 (2007)
  • Author(s): 浅井 清涼
  • Organizer: 2007年秋季第68回応用物理学会学術講演会
  • Place of Presentation: 札幌
  • Year and Date: 2007-09-07
• [Presentation] Si multidot FETs for single-electron transfer and single-photon detection (2007)
  • Author(s): Michiharu Tabe
  • Organizer: 13th International Symposium on Ultrafast Phenomena in Semiconductors(13-UFPS)
  • Place of Presentation: Vilnius,Lithuania
  • Year and Date: 2007-08-27
• [Presentation] Si single-electron FETs for single-photon detection (2007)
  • Author(s): Michiharu Tabe
  • Organizer: 2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD 2007)
  • Place of Presentation: Gyeongju,Korea
  • Year and Date: 2007-06-25
• [Presentation] Ionization of single-acceptors in p-Si epilayer observed using single-hole-tunneling transistor (2007)
  • Author(s): Z. A. Burhanudin
  • Organizer: 2007 Silicon Nanoelectronics Workshop
  • Place of Presentation: Kyoto
  • Year and Date: 2007-06-10
• [Presentation] Effects of Parameter Randomness on Quantized-electron transfer in 1D Multiple-Tunnel-Junction Arrays (2007)
  • Author(s): D. Moraru
  • Organizer: 2007 Silicon Nanoelectronics Workshop
  • Place of Presentation: Kyoto
  • Year and Date: 2007-06-10
• [Presentation] 多重ドットトランジスタによる単電子転送動作シミュレーション (2007)
  • Author(s): 池田 浩也
  • Organizer: 電子情報通信学会SDM, ED, CPM合同研究会
  • Place of Presentation: 浜松
  • Year and Date: 2007-05-24
• [Presentation] Pドープ極薄SOI-MOSFETの単電子特性学会等名 (2007)
  • Author(s): 永田 大輔
  • Organizer: 電子情報通信学会SDM, ED, CPM合同研究会
  • Place of Presentation: 浜松
  • Year and Date: 2007-05-24
• [Presentation] 低温KFMによる極薄SOI-MOSFETチャネル表面電位観察 (2007)
  • Author(s): ラトノ・ヌルヤディ
  • Organizer: 第6回日本表面科学会中部支部・学術講演会
  • Place of Presentation: 名古屋
  • Year and Date: 2007-04-14
• [Presentation] Pをカウンタドープした極薄SOI-MOSFETにおける単電子特性 (2007)
  • Author(s): 海老澤 一仁
  • Organizer: 第6回日本表面科学会中部支部・学術講演会
  • Place of Presentation: 名古屋
  • Year and Date: 2007-04-14
• [Presentation] 多重ドットトランジスタ交流動作時のチャネル表面電位の観察 (2007)
  • Author(s): 浅井 清涼
  • Organizer: 第6回日本表面科学会中部支部・学術講演会
  • Place of Presentation: 名古屋
  • Year and Date: 2007-04-14
• [Presentation] シリコン単電子デバイス-ランダムドット系での単電子操作と光応用- (2007)
  • Author(s): 田部道晴
  • Organizer: 応用物理学会 第20回上田記念講演会および東海支部40 周年記念会
  • Place of Presentation: 名古屋ガーデンパレス
  • Year and Date: 2007-01-06
• [Presentation] Si Single-Electron Devices : Interaction with Individual Dopants and Photons (2007)
  • Author(s): M. Tabe, R. Nuryadi, D. Moraru, Z. A. Burhanudin, H. Ikeda
  • Organizer: Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V)
  • Place of Presentation: Tokyo
• [Book] シリコンフォトニクス-先端光テクノロジーの新展開-、第4章「受光素子」 金光義彦・深津晋(共編) (2007)
  • Author(s): 田部道晴
  • Publisher: オーム社
• [Book] シリコンフォトニクスー先端光テクノロジーの新展開-第4章「受光素子」 (2007)
  • Author(s): 田部 道晴
  • Publisher: オーム社
• [Book] Eds : D. Ferry and S. Oda, CRC Press (2006)
  • Author(s): M. Tabe, H. Ikeda and Y. Ishikawa
  • Publisher: Silicon Nanoelectronics, chapter 6 Resonant tunneling in Si nanodevices
• [Book] Silicon Nanoelectronics, chap.6 Resonant tunneling in Si nanodevices(edited by Shunri Oda and David Ferry) (2006)
  • Author(s): Michiharu Tabe, Hiroya Ikeda, Yasuhiko Ishikawa
  • Publisher: CRC Press
• [Remarks] (1)田部 道晴 : 集積回路原子の「ムラ」検査-静岡大、微細化促す新技術日経産業新聞(2008.10.2)
• [Remarks] (2)田部 道晴 : 第20 回(平成18 年度)「高柳記念賞」受賞が新聞に掲載される.中日新聞、静岡新聞(2006.12.10)
• [Remarks] (3)田部道晴 : 「コンピューター光で動かせる? 光子を検出 微小シリコン開発」朝日新聞(2005.10.22)
• [Remarks] 電子工学研究所
  • URL: http://www.rie.shizuoka.ac.jp/index.html
• [Remarks] 田部研究室
  • URL: http://www.rie.shizuoka.ac.jp/~nanohome
• [Remarks]
  • URL: http://www.rie.shizuoka.ac.jp/index.html
• [Remarks]
  • URL: http://www.rie.shizuoka.ac.jp/~nanohome