Development of High-temperature cBN Thin Film DevicesFor Severe Environments

• Project/Area Number: 16106009
• Research Category: Grant-in-Aid for Scientific Research (S)
• Allocation Type: Single-year Grants
• Research Field: Material processing/treatments
• Research Institution: The University of Tokyo
• Principal Investigator: YOSHIDA Toyonobu The University of Tokyo, 大学院・工学系研究科, 教授 (00111477)
• Co-Investigator(Kenkyū-buntansha): 幾原 雄一 東京大学, 工学部・総合研究機構, 教授 (70192474) ; 近藤 高志 東京大学, 大学院・工学系研究科, 准教授 (60205557)
• Co-Investigator(Renkei-kenkyūsha): IKUHARA Yuuichi 東京大学, 工学系研究科総合研究機構, 教授 (70192474) ; KONDO Takashi 東京大学, 大学院・工学系研究科, 准教授 (60205557)
• Project Period (FY): 2004 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥113,490,000 (Direct Cost: ¥87,300,000、Indirect Cost: ¥26,190,000); Fiscal Year 2008: ¥9,880,000 (Direct Cost: ¥7,600,000、Indirect Cost: ¥2,280,000); Fiscal Year 2007: ¥21,710,000 (Direct Cost: ¥16,700,000、Indirect Cost: ¥5,010,000); Fiscal Year 2006: ¥18,200,000 (Direct Cost: ¥14,000,000、Indirect Cost: ¥4,200,000); Fiscal Year 2005: ¥23,660,000 (Direct Cost: ¥18,200,000、Indirect Cost: ¥5,460,000); Fiscal Year 2004: ¥40,040,000 (Direct Cost: ¥30,800,000、Indirect Cost: ¥9,240,000)
• Keywords: 高温耐環境デバイス / cBN 薄膜 / プラズマプロセス / ドーピング / プラズマ加工 / 先端機能デバイス / 半導体物性 / 表面・界面物性 / 材料加工・処理 / 先端機能デパイス / cubic boron nitride / hexagonal boron nitride / UV emission / wide band gap / doping / 立方晶窒化ホウ素 / 乱層構造sp2結合窒化ホウ素 / ワイドバンドギャップ / 電気伝導度 / ナノインデンテーション / turbostratic boron nitride / wide bandgap / sputtering / IVP-CVD

Research Abstract

アルミニウムが軟化するほどの高温や強い紫外・粒子線に晒される原子炉近傍などの過酷な環境下でも動作する立方晶窒化ホウ素(cBN)の薄膜を使った半導体デバイス創製基盤確立を目指し、二種の異なるプラズマプロセスを適用して、ガス・イオンエネルギー動的制御機構と不純物添加法を新規に開発し、cBN 薄膜で初めてとなる伝導度制御を実現すると共に、Si表面原子ステップへの部分的なエピタキシャル成長核を見出した。

Research Products

• [Journal Article] Effects of magnesium doping on growth and electric conductivity of nanocrystalline cubic boron niteride thin films, J. Phys. (2009)
  • Author(s): K. Kojima, K. Nose, M. Kambara, T. Yoshida
  • Journal Title: D-Applied physics 42[5] Pages: 555304-555304
  • Peer Reviewed
• [Journal Article] Effects of magnesium doping on growth and electric conductivity of nanocrystalline cubiv boron niteride thin films (2009)
  • Author(s): K. Kojima, K. Nose, M. Kanbara, T. Yoshida
  • Journal Title: J. Phys.D-Applied physics 42[5] Pages: 55304-55304
  • Peer Reviewed
• [Journal Article] Semiconducting properties of zinc-doped cubic boron nitridethin films (2007)
  • Author(s): K. Nose and T. Yoshida
  • Journal Title: J. Appl. Phys 102 Pages: 63711-63711
  • Peer Reviewed
• [Journal Article] Direct nucleation of cubic boron nitride on silicon substrate (2007)
  • Author(s): H.S. Yang, C. Iwamoto, T. Yoshida
  • Journal Title: Diamond Related Mater 16[3] Pages: 642-642
  • Peer Reviewed
• [Journal Article] Effects of Si impurity on the nucleation and growth of cubic boron nitride thin films (2007)
  • Author(s): H. Oba , K. Nose and T. Yoshida
  • Journal Title: Surf. Coat. Technol 201 Pages: 5502-5502
  • Peer Reviewed
• [Journal Article] Semiconducting properties of zinc-doped cubic boron nitride thin films (2007)
  • Author(s): K. Nose, T. Yoshida
  • Journal Title: J. Appl. Phys 102
  • Peer Reviewed
• [Journal Article] Direct nucleation of cubic boron nitride on silicon substrate (2007)
  • Author(s): H.S.Yang, C.Iwamoto, T.Yoshida
  • Journal Title: DIAMOND ＆ RELATED MATERIALS 16 Pages: 642-644
• [Journal Article] Effects of Sl impurity on the nucleation and growth of cubic boron nitride thin films (2007)
  • Author(s): H.Oba, K.Nose, T.Yoshida
  • Journal Title: SUFRACE ＆ COATING TECUNOLOGY 201 Pages: 5502-5505
• [Journal Article] T. YoshidaElectric conductivity of boron nitride thin films enhanced by in situ doping of zinc (2006)
  • Author(s): K. Nose, H. Oba, T. Yoshida
  • Journal Title: Appl. Phys. Lett 89[11] Pages: 112124-112124
  • Peer Reviewed
• [Journal Article] Electric conductivity of boron nitride thin films enhanced by in situ doping of zinc (2006)
  • Author(s): K.Nose, H.Oba, T.Yoshida
  • Journal Title: APPLIED PHYSICS LETTERS 89 Pages: 112124-112124
• [Journal Article] Effects of Si impurity on the nucleation and growth of cubic boron nitride thin films (2006)
  • Author(s): Oba, H, Nose, K, Yoshida, T, et al.
  • Journal Title: SURFACE & COATINGS TECHNOLOGY in press
• [Journal Article] Defect-induced electronic conduction of tBN (2005)
  • Author(s): K. Nose, HS. Yang, H. Oba, and T. Yoshida
  • Journal Title: thin films, Diamond Related Mater. 14[11-12] Pages: 1960-1963
  • Peer Reviewed
• [Journal Article] Mechanical properties of boron nitride films prepared by plasma-enhanced chemical vapor deposition (2005)
  • Author(s): H.S. Yang and T. Yoshida
  • Journal Title: Surf. Coat. Technol 200[1-4] Pages: 984-987
  • Peer Reviewed
• [Journal Article] Electrical characterization of p-type cubic boron nitride/n-type silicon heterojunction diodes (2005)
  • Author(s): K. Nose, HS. Yang, and T. Yoshida
  • Journal Title: Diamond Related Mater 14[8] Pages: 1297-1301
  • Peer Reviewed
• [Journal Article] Peculiar deformation characteristics of turbostratic boron nitride thin film (2005)
  • Author(s): H. Yang, C. Iwamoto, and T. Yoshida
  • Journal Title: Thin Solid Films 483(1-2) Pages: 218-221
  • Peer Reviewed
• [Journal Article] Defect-induced electronic conduction of tBN thin films (2005)
  • Author(s): Nose, K, Yang, HS, Oba, H, et al.
  • Journal Title: DIAMOND AND RELATED MATERIALS 14・11-12 Pages: 1960-1963
• [Journal Article] Mechanical properties of boron nitride films prepared by plasma-enhanced chemical vapor deposition (2005)
  • Author(s): Yang, HS, Yoshida, T
  • Journal Title: SURFACE & COATINGS TECHNOLOGY 200・1-4 Pages: 984-987
• [Journal Article] Electrical characterization of p-type cubic boron nitride/n-type silicon heterojunction diodes (2005)
  • Author(s): Nose, K, Yang, HS, Yoshida, T
  • Journal Title: DIAMOND AND RELATED MATERIALS 14・8 Pages: 1297-1301
• [Journal Article] Peculiar deformation characteristics of turbostratic boron nitride thin (2005)
  • Author(s): Yang, H, Iwamoto, C, Yoshida, T
  • Journal Title: THIN SOLID FILMS 483・1-2 Pages: 218-221
• [Journal Article] Mechanical properties of boron nitride films prepared by plasma-enhanced chemical vapor deposition (2005)
  • Author(s): H.S.Yang, T.Y.shida
  • Journal Title: Surface and coating technologies (印刷中)
• [Journal Article] Peculiar deformation characteristics of turbostratic boron nitride thin films (2005)
  • Author(s): H.S.Yang, C.Iwamoto, T.Yoshida
  • Journal Title: Thin Solid Films (印刷中)
• [Journal Article] Electrical characterization of p-type cubic boron nitride / n-type silicon heterojunction diodes (2005)
  • Author(s): K.Nose, H.S.Yang, T.Yoshida
  • Journal Title: Diamond and Related Materials (印刷中)
• [Presentation] Plasma processing of nano-crystalline semiconductive cBN thin films (2008)
  • Author(s): T. Yoshida
  • Organizer: 3^<rd> Int. School of Advanced Plasma Tech
  • Place of Presentation: Varenna, Italy
  • Year and Date: 2008-07-30
• [Presentation] Plasma processing of nano-crystalline seniconductive cBN thin filns (invited) (2008)
  • Author(s): T Yoshida
  • Organizer: 3^rd Int.School of Advanced Plasma Tech
  • Place of Presentation: Varenna, Itaky
  • Year and Date: 2008-07-28
• [Presentation] Some issues of the plasma processing and characterization of nanocrystalline BN thin film(inbited) (2008)
  • Author(s): T. Yoshida
  • Organizer: HTPP-10
  • Place of Presentation: Patras Greece
  • Year and Date: 2008-07-07
• [Presentation] ICP-CVD法によるhBN薄膜堆積における結晶構造制御応物学会/春季 (2008)
  • Author(s): 十倉祐紀、神原淳、吉田豊信
  • Organizer: 27a-S-4
  • Place of Presentation: 東京
  • Year and Date: 2008-03-27
• [Presentation] Some issues of the plasma (2008)
  • Author(s): T. Yoshida
  • Organizer: processing and characterization of nanocrystalline BN thin film, HTPP-10
  • Place of Presentation: Patras, Greece,
• [Presentation] Processing and Characterization of nano-crystalline cBN films (2007)
  • Author(s): T. Yoshida
  • Organizer: 台湾薄膜科学技術会議2007年会
  • Place of Presentation: Taipei, Dec
  • Year and Date: 2007-12-22
• [Presentation] Processing and Characterization of nano-crystalline cBN films (2007)
  • Author(s): T. Yoshida
  • Organizer: 台湾薄膜科学技術会議2007年会
  • Place of Presentation: Taipei
  • Year and Date: 2007-12-22
• [Presentation] Some issues on the plasma surface engineering for the last 20 years (2007)
  • Author(s): T. Yoshida
  • Organizer: International workshop on adv. thin films and surface tech
  • Place of Presentation: Shawwan
  • Year and Date: 2007-11-13
• [Presentation] Some issues on the plasma sutface engineering for the last 20 years (2007)
  • Author(s): T, Yoshida
  • Organizer: lntemational workshop on adv.thin films and surface tech.
  • Place of Presentation: Shawwan
  • Year and Date: 2007-11-13
• [Presentation] Processing and Characterization of nano-crystalline cBN films (2007)
  • Author(s): T, Yoshida
  • Organizer: Doyama Sympo.
  • Place of Presentation: Tokyo
  • Year and Date: 2007-09-06
• [Presentation] Semiconductingcubic boron nitride thin films preparedby in-situ sputter-doping, (2007)
  • Author(s): K. Nose, T. Yoshida
  • Organizer: 18^<th> Int. Symposium on Plasma Chem
  • Place of Presentation: Kyoto
  • Year and Date: 2007-08-30
• [Presentation] X-Ray Diffraction Study Of Cubic-and Hexagonal-Boron-Nitride Thin Films Grown byInductively-Coupled Plasma Enhanced Chemical Vapor Deposition (2007)
  • Author(s): K. Nakamura, S. Hirano, K. lnaba, K. Nose, T. Yoshida
  • Organizer: 18thInt.Symp.on Plasma Chem.
  • Place of Presentation: Kyoto
  • Year and Date: 2007-08-30
• [Presentation] Semiconducting cubic boron nitride thin films prepared by in-situ sputter-doping (2007)
  • Author(s): K, Nose, T. Yoshida
  • Organizer: 18th lnt.Symp.on Plasma Chem.
  • Place of Presentation: Kyoto
  • Year and Date: 2007-08-28
• [Presentation] X-Ray DiffractionStudy of Cubic- andHexagonal-Boron-Nitride Thin FilmsGrown by Inductively-Coupled PlasmaEnhanced Chemical Vapor Deposition (2007)
  • Author(s): K. Nakamura, S. Hirano, K. Inaba, K. Nose, T. Yoshida
  • Organizer: 18^<th> Int. Symposium on Plasma Chem.
  • Place of Presentation: Kyoto
  • Year and Date: 2007-08-27
• [Presentation] 位相制御RFバイアススパッタリングによる立方晶窒化ホウ素薄膜の堆積と電気伝導性制御 (2007)
  • Author(s): 野瀬健二, 吉田豊信
  • Organizer: ニューダイヤモンドフォーラム
  • Place of Presentation: 東京
  • Year and Date: 2007-06-29
• [Presentation] ZnドープcBN薄膜の電気伝導性に与えるB/N組成比の影響 (2007)
  • Author(s): 野瀬健二, 吉田豊信
  • Organizer: 第54回応用物理学会, I-498,27-p-M-12
  • Place of Presentation: 東京
  • Year and Date: 2007-03-27
• [Presentation] Processing and Characterization of nano-crystalline cBN films (2007)
  • Author(s): T. Yoshida
  • Organizer: Doyama Symposium,
  • Place of Presentation: Tokyo
  • Year and Date: 2007-02-06
• [Presentation] Toward a new era of plasma surface engineering (2007)
  • Author(s): T. Yoshida
  • Organizer: AEPSE 2007
  • Place of Presentation: Nagasaki
• [Presentation] Preparation of High Conductive Cubic Boron Nitride Thin Films by in-situ Zinc Doping (2006)
  • Author(s): K. Nose, T. Yoshida
  • Organizer: Materials Research Society Fall meeting
  • Year and Date: 2006-11-29
• [Presentation] ICP-CVD法によるcBN核生成・成長に及ぼす動的ガス組成費の影響 (2006)
  • Author(s): 野瀬健二, 十倉祐紀, 中村圭輔, 吉田豊信
  • Organizer: 応物学会/秋季29p-X-9
  • Place of Presentation: 滋賀
  • Year and Date: 2006-08-29
• [Presentation] 時間依存バイアス法によるcBN核生成制御 (2006)
  • Author(s): 野瀬健二, 吉田豊信
  • Organizer: 応物学会/春季,22p-zp-13
  • Place of Presentation: 東京
  • Year and Date: 2006-03-22
• [Presentation] Vapor phase deposition of cBN thin films,Vapor phase deposition of cBN thin films (2006)
  • Author(s): T. Yoshida
  • Organizer: Iketani-Conference
  • Place of Presentation: Tokyo
• [Presentation] Zinc-doped nano-crystalline boron nitride thin films with semiconducting properties (2005)
  • Author(s): K. Nose, H. Oba, T. Yoshida
  • Organizer: The 3rd International symposium on Frontier of Nanochemistry and Nanomaterials
  • Place of Presentation: Kyoto
  • Year and Date: 2005-10-01
• [Presentation] Gallium Nitride in Court, Boron Nitride in Lab (2005)
  • Author(s): K. Nose, T. Yoshida
  • Organizer: Tinsghua University- University of Tokyo Student Forum 2005
  • Place of Presentation: Kyoto
  • Year and Date: 2005-09-26
• [Presentation] スパッタおよびCVDによるcBN薄膜堆積と電気伝導特性評価 (2005)
  • Author(s): 野瀬健二, 吉田豊信
  • Organizer: 応物学会/秋季シンポジウム講演
  • Place of Presentation: 徳島(No9132, 8p-N-8)
  • Year and Date: 2005-09-08
• [Presentation] Non- ohmic conduction up to 770 K in BN thin films deposited by phase- regulated RF bias sputtering in an ultra- high vacuum ambient (2005)
  • Author(s): K. Nose, H. Oba, T. Yoshida
  • Organizer: The 10th International Conference on New Diamond Science and Technology, 16-2
  • Place of Presentation: Tsukuba
  • Year and Date: 2005-04-12
• [Presentation] cBN films (2005)
  • Author(s): T. Yoshida
  • Organizer: UT Forum
  • Place of Presentation: Beijing, China
• [Presentation] Effects of Si impurity on the growth and nucleation of cubic boron nitride thinm films (2005)
  • Author(s): H. Oba, K. Nose and T. Yoshida
  • Organizer: The 5th Asian-European International Conference on Plasma Surface Engineering, ThP509
  • Place of Presentation: China
• [Presentation] Boron ion implantation for direct cBN nucleation on Si (2005)
  • Author(s): K. Nakamura and T. Yoshida
  • Organizer: The 5^<th> Asian-European International Conference on Plasma Surface Engineering, WeP509
  • Place of Presentation: China
• [Presentation] The fabrication of n-type cBN thin films with sputter-doping of Si (2004)
  • Author(s): H. Oba, K. Nose, T. Yoshida
  • Organizer: The 7th Asian-Pacific conference on Plasma Science Technology, 30P-9
  • Place of Presentation: Fukuoka
  • Year and Date: 2004-06-30
• [Presentation] Electronic conduction in as-deposited nano-crystalline boron nitride thin films (2004)
  • Author(s): K. Nose, H. Oba and T. Yoshida
  • Organizer: International conference of new diamond science and technology ICNDST-9
  • Place of Presentation: Tokyo
  • Year and Date: 2004-03-26
• [Presentation] Plasma Surface Engineering (2004)
  • Author(s): Zarzar Matsushita, K. Nose, T. Yoshida
  • Organizer: Garmisch
  • Place of Presentation: Germany
• [Book] "Plasma processing of nano crystalline semiconductive cubic boron nitride thin films" in "New Industrial Plasma Technology" edited by Y. Kawai
  • Author(s): K. Nose and T. Yoshida
  • Publisher: Wiley-VCH社
• [Remarks]
  • URL: http://www.plasma.t.u-tokyo.ac.jp/
• [Remarks] 「宇宙のプラズマをもっと身近なものに-プラズマを利用した新しいマテリアル(材料)を開発」と題した一般向け研究紹介を東京大学・工学部ウェブページにて公開
  • URL: http://www.t.u-tokyo.ac.jp/faculty/t_meibo/pdf/85087821.pdf
• [Remarks]
  • URL: http://www.plasma.t.u-tokyo.ac.jp