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A research on silicon nano-devices for single-electron, quantum, CMOS integrated circuits operating at room temperature

Research Project

Project/Area Number 16201029
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Microdevices/Nanodevices
Research InstitutionThe University of Tokyo

Principal Investigator

HIRAMOTO Toshiro  The University of Tokyo, Institute of Industrial Science, Professor (20192718)

Co-Investigator(Kenkyū-buntansha) SAKURAI Takayasu  University of Tokyo, Institute of Industrial Science, Professor (90282590)
SARAYA Takuya  University of Tokyo, Institute of Industrial Science, Research Associate (90334367)
川口 博  東京大学, 生産技術研究所, 助手 (00361642)
Project Period (FY) 2004 – 2007
Project Status Completed (Fiscal Year 2007)
Budget Amount *help
¥49,530,000 (Direct Cost: ¥38,100,000、Indirect Cost: ¥11,430,000)
Fiscal Year 2007: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2006: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
Fiscal Year 2005: ¥15,600,000 (Direct Cost: ¥12,000,000、Indirect Cost: ¥3,600,000)
Fiscal Year 2004: ¥19,760,000 (Direct Cost: ¥15,200,000、Indirect Cost: ¥4,560,000)
KeywordsNanoelectronics / MOSFET / Single-Electron Transistor / Quantum Effect Device / Coulomb Blockade / CMOS / Functional Device / Analog Pattern Matching Circuit / 量子效果デバイス / ナノテクノロジー / CMOS回路 / 量子効果 / 室温動作
Research Abstract

This research aims at a new concept of integrate circuit in which new functional devices utilizing single-electron/quantum effect and conventional CMOS devices are merged operating at room temperature. At first, the fabrication process of single-electron transistors was developed. The world largest peak-to-valley current ratios of Coulomb blockade oscillations and negative differential conductance at room temperature were successfully obtained. Furthermore, the precise control of the peak position of the Coulomb blockade oscillations was achieved for the first time in single-hole transistors which have very small quantum dots. The unique characteristics originate from large quantum energy spacing in the quantum dot. Next, the integration of single-electron transistors operating at room temperature was pursued. The process conditions were finely tuned and finally, the single-electron transistors operating at room temperature were successfully integrated for the first time. Moreover, analog pattern matching circuits were fabricated by integrating single-electron transistors and their operations were demonstrated at room temperature.

Report

(5 results)
  • 2007 Annual Research Report   Final Research Report Summary
  • 2006 Annual Research Report
  • 2005 Annual Research Report
  • 2004 Annual Research Report
  • Research Products

    (191 results)

All 2009 2008 2007 2006 2005 2004 Other

All Journal Article (60 results) (of which Peer Reviewed: 30 results) Presentation (125 results) Book (4 results) Patent(Industrial Property Rights) (2 results)

  • [Journal Article] Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor2008

    • Author(s)
      Sejoon Lee, Kousuke Miyaji, Masaharu Kobayashi, Toshiro Hiramoto
    • Journal Title

      Applied Physics Letters vol. 92, no. 7

      Pages: 73502-73502

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Experimental Study on Quantum Confinement Effects in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors and Single-Electron Transistors2008

    • Author(s)
      Masaharu Kobayashi, Toshiro Hiramoto
    • Journal Title

      Journal of Applied Physics vol. 103, no. 5

      Pages: 53709-53709

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] On the Origin of Negative Differential Conductance in Ultranarrow Wire Channel Silicon Single-Electron and Single-Hole Transistor2008

    • Author(s)
      Masaharu Kobayashi, Kousuke Miyaji, Toshiro Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics vol. 47, no. 3

      Pages: 1813-1817

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Strong dependence of tunneling transport properties on over-driving voltage for room-temperature-operating single electron/hole transistors formed with ultra narrow [100] silicon nanowire channel2008

    • Author(s)
      Sejoon Lee, Toshiro Hiramoto
    • Journal Title

      Applied Physics Letters vol. 93, No. 4

      Pages: 43508-43508

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor2008

    • Author(s)
      Sejoon Lee, Kousuke Miyaji, Masaharu Kobayashi, Toshiro Hiramoto
    • Journal Title

      Applied Physics Letters vol. 92. no. 7, 073502

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Experimental Study on Quantum Confinement Effects in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors and Single-Electron Transistors2008

    • Author(s)
      Masaharu Kobayashi, Toshiro Hiramoto
    • Journal Title

      Journal of Applied Physics vol. 103. no. 5, 053709

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Strong dependence of tunneling transport properties on over-driving voltage for room-temperature-operating single electron/hole transistors formed with ultra narrow [100] silicon nanowire channel2008

    • Author(s)
      Sejoon Lee, Toshiro Hiramoto
    • Journal Title

      Applied Physics Letters vol. 93, No. 4. 043508

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor2008

    • Author(s)
      Sejoon Lee, Kousuke Miyaji, Masaharu Kobayashi, Toshiro Hiramoto
    • Journal Title

      Applied Physics Letters 92

      Pages: 73502-73502

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Experimental Study on Quantum Confinement Effects in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors and Single-Electron Transistors2008

    • Author(s)
      Masaharu Kobayashi, Toshiro Hiramoto
    • Journal Title

      Journal of Applied Physics 103

      Pages: 53709-53709

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Large Coulomb-Blockade Oscillations and Negative Differential Conductance in Silicon Single-Electron Transistors with [100]-and [110]-Directed Channels at Room Temperature2007

    • Author(s)
      M. Kobayashi, T. Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics Vol. 46, No. 1

      Pages: 24-27

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Experimental Study on Breakdown of Mobility Universality in <100>-directed (110)-oriented pMOSFETs2007

    • Author(s)
      K. Shimizu, G. Tsutsui, D. Januar, T. Saraya, T. Hiramoto
    • Journal Title

      IEEE Transactions on Nanotechnology Vol. 6, No. 3

      Pages: 358-361

    • NAID

      10018234140

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Experimental Study on Mobility Universality in (100) Ultra Thin Body nMOSFET with SOI Thickness of 5nm2007

    • Author(s)
      Ken Shimizu, Gen Tsutsui, Toshiro Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics Vol. 46, No. 20

    • NAID

      110006391851

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Control of full width at half maximum of Coulomb oscillation in silicon single-hole transistors at room temperature2007

    • Author(s)
      Kousuke Miyaji, Toshiro Hiramoto
    • Journal Title

      Applied Physics Letters Vol. 91, No. 5

      Pages: 53509-53509

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Experimental Study on Mobility in (110)-Oriented Ultrathin-Body Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field-Effect Transistor with Single-and Double-Gate Operations2007

    • Author(s)
      Gen Tsutsui, Toshiro Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics Vol. 46, No. 9A

      Pages: 5686-5690

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Transport in Ultrathin SOI MOSFETs and Silicon Nanowire Transistors2007

    • Author(s)
      T. Hiramoto (Invited)
    • Journal Title

      ECS Transactions Vol. 11, No. 6

      Pages: 403-411

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Large Coulomb-Blockade Oscillations and Negative Differential Conductance in Silicon Single-Electron Transistors with [100]- and [110]- Directed Channels at Room Temperature2007

    • Author(s)
      M. Kobayashi, T. Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics Vol. 46, No. 1

      Pages: 24-27

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Experimental Study on Breakdown of Mobility Universality in <100>-directed (110)-oriented pMOSFETs2007

    • Author(s)
      K. Shimizu, G Tsutsui, D. Januar, T. Saraya, T. Hiramoto
    • Journal Title

      IEEE Transactions on Nanotechnology Vol. 6, No. 3

      Pages: 358-361

    • NAID

      10018234140

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Experimental Study on Mobility Universality in (100) Ultra Thin Body nMOSFET with SOI Thickness of 5nm2007

    • Author(s)
      Ken Shimizu, Gen Tsutsui, Toshiro Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics Vol. 46. No. 20

    • NAID

      110006391851

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Control of full width at half maximum of Coulomb oscillation in silicon single-hole transistors at room temperature2007

    • Author(s)
      Kousuke Miyaji, Toshiro Hiramoto
    • Journal Title

      Applied Physics Letters Vol. 91, No. 5, 053509

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Experimental Study on Mobility in (110)-Oriented Ultrathin-Body Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field-Effect Transistor with Singleand Double-Gate Operations2007

    • Author(s)
      Gen Tsutsui, Toshiro Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics Vol. 46, No. 9A

      Pages: 5686-5690

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Control of full width at half maximum of Coulomb oscillation in silicon single-hole transistors at room temperature2007

    • Author(s)
      Kousuke Miyaji, Toshiro Hiramoto
    • Journal Title

      Applied Physics Letters 91

      Pages: 53509-53509

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Large Coulomb-Blockade Oscillations and Negative Differential Conductance in Silicon Single-Electron Transistors with [100]- and [110]- Directed Channels at Room Temperature2007

    • Author(s)
      M.Kobayashi, T.Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics Vol.46, No.1

      Pages: 24-27

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Impact of Drain Induced Barrier Lowering on Read Scheme in Silicon Nanocrystal Memory with Two-Bit-per-Cell Operation2006

    • Author(s)
      S. Park, H. Im, I. Kim, T. Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics Vol. 45, No. 2A

      Pages: 638-642

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors2006

    • Author(s)
      K. Miyaji, M. Saitoh, T. Hiramoto
    • Journal Title

      Applied Physics Letters Vol. 88, No. 14

      Pages: 143505-143505

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Compact Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels2006

    • Author(s)
      K. Miyaji, M. Saitoh, T. Hiramoto
    • Journal Title

      IEEE Transactions on Nanotechnology Vol. 5, No. 3

      Pages: 167-173

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature-Operating Silicon Single-Hole Transistor2006

    • Author(s)
      M. Kobayashi, M. Saitoh, T. Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics Vol. 45, No. 8A

      Pages: 6157-6161

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Emerging nanoscale silicon devices taking advantage of nanostructure physics2006

    • Author(s)
      T. Hiramoto, M. Saitoh, G. Tsutsui
    • Journal Title

      IBM Journal of Research and Development Vol. 50, No. 4/5

      Pages: 411-418

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Mobility and Threshold-Voltage Comparison Between (110)- and (100)-Oriented Ultrathin-Body Silicon MOSFETs2006

    • Author(s)
      G. Tsutsui, T. Hiramoto
    • Journal Title

      IEEE Transactions on Electron Devices Vol. 53, No. 10

      Pages: 2582-2588

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors2006

    • Author(s)
      K. Miyaji, M. Saitoh, T. Hiramoto
    • Journal Title

      Applied Physics Letters Vol. 88, No. 14, 143505.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Emerging nanoscale silicon devices taking advantage of nanostructure physics2006

    • Author(s)
      T. Hiramoto, M. Saitoh, G Tsutsui
    • Journal Title

      IBM Journal of Research and Development Vol. 50, No. 4/5

      Pages: 411-418

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Mobility and Threshold-Voltage Comparison Between (110)- and (100)-Oriented Ultrathin-Body Silicon MOSFETs2006

    • Author(s)
      G Tsutsui, T. Hiramoto
    • Journal Title

      IEEE Transactions on Electron Devices Vol. 53, No. 10

      Pages: 2582-2588

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors2006

    • Author(s)
      K.Miyaji, M.Saitoh, T.Hiramoto
    • Journal Title

      Applied Physics Letters Vol.88, No.14

      Pages: 143505-143505

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Compact Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistros with Discrete Quantum Energy Levels2006

    • Author(s)
      K.Miyaji, M.Saitoh, T.Hiramoto
    • Journal Title

      IEEE Transactions on Nanotechnology Vol.5, No.3

      Pages: 167-173

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature-Operating Silicon Single-Hole Transistor2006

    • Author(s)
      M.Kobayashi, M.Saitoh, T.Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics Vol.45, No.8A

      Pages: 6157-6161

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Emergiing nanoscale silicon devices taking advantage of nanostructure physics2006

    • Author(s)
      T.Hiramoto, M.Saitoh, G.Tsutsui
    • Journal Title

      IBM Journal of Research and Development Vol.50, No.4/5

      Pages: 441-418

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Full Width of Half Maximum of Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor Controlled by Voltage Gain2006

    • Author(s)
      K.Miyaji, M.Saitoh, T.Hiramoto
    • Journal Title

      APL (発表予定)

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Compact Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels2006

    • Author(s)
      K.Miyaji, M.Saitoh, T.Hiramoto
    • Journal Title

      IEEE Trans.Nanotechnology (発表予定)

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Room-Temperature Operation of Current Switching Circuit Using Integrated Silicon Single-Hole Transistors2005

    • Author(s)
      M. Saitoh, H. Harata, T. Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics Vol. 44, No. 11

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Effects of Channel Thinning on Threshold Voltage Shift in Ultrathin Body Silicon Nanocrystal Memories2005

    • Author(s)
      K. Yanagidaira, M. Saitoh, T. Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics Vol. 44, Part 1, No. 4B.

      Pages: 2608-2611

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Silicon Single-Hole Transistor with Large Coulomb Blockade Oscillations and High Voltage Gain at Room Temperature2005

    • Author(s)
      H. Harata, M. Saitoh, T. Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics Vol. 44, Part 2, No. 20

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Impact of SOI Thickness Fluctuation on Threshold Voltage Variation in Ultra Thin Body SOI MOSFETs2005

    • Author(s)
      G. Tsutsui, M. Saitoh, T. Nagumo, T. Hiramoto
    • Journal Title

      IEEE Transactions on Nanotechnology Vol. 4, No. 3

      Pages: 369-373

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Channel Width and Length Dependence in Si NanoCrystal Memories with Ultra-NanoScale Channel2005

    • Author(s)
      J. Brault, M. Saitoh, T. Hiramoto
    • Journal Title

      IEEE Transactions on Nanotechnology Vol. 4, No. 3

      Pages: 349-354

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Experimental Study on the Universality of Mobility Behavior in Ultra Thin Body SOI pMOSFETs2005

    • Author(s)
      G. Tsutsui, M. Saitoh, T. Nagumo, T. Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics Vol. 44, No. 6A

      Pages: 3889-3892

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Enhancement of Charge Storage Performance in Double-Gate Silicon Nanocrystal Memories With Ultrathin Body Structure2005

    • Author(s)
      K. Yanagidaira, M. Saitoh, T. Hiramoto
    • Journal Title

      IEEE Electron Devices Letters Vol. 26, No. 7

      Pages: 473-475

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Experimental Study on Superior Mobility in (110)-Oriented UTB SOI pMOSFETs2005

    • Author(s)
      G. Tsutsui, M. Saitoh, T. Hiramoto
    • Journal Title

      IEEE Electron Devices Letters Vol. 26, No. 11

      Pages: 836-838

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Effects of Channel Thinning on Threshold Voltage Shift in Ultrathin Body Silicon Nanocrystal Memories2005

    • Author(s)
      K. Yanagidaira, M. Saitoh, T. Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics Vol. 44, Part 1, No. 4B

      Pages: 2608-2611

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Impact of SOI Thickness Fluctuation on Threshold Voltage Variation in Ultra Thin Body SOI MOSFETs2005

    • Author(s)
      G Tsutsui, M. Saitoh, T. Nagumo, T. Hiramoto
    • Journal Title

      IEEE Transactions on Nanotechnology Vol. 4, No. 3

      Pages: 369-373

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Experimental Study on the Universality of Mobility Behavior in Ultra Thin Body SOI pMOSFETs2005

    • Author(s)
      G Tsutsui, M. Saitoh, T. Nagumo, T. Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics. Vol. 44, No. 6A

      Pages: 3889-3892

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Enhancement of Charge Storage Performance in Double-Gate Silicon Nanocrystal Memories With Ultrath in Body Structure2005

    • Author(s)
      K. Yanagidaira, M. Saitoh, T. Hiramoto
    • Journal Title

      IEEE Electron Devices Letters Vol. 26, No. 7

      Pages: 473-475

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Experimental Study on Superior Mobility in (110)-Oriented UTB SOI pMOSFETs2005

    • Author(s)
      G Tsutsui, M. Saitoh, T. Hiramoto
    • Journal Title

      IEEE Electron Devices Letters Vol. 26, No. 11

      Pages: 836-838

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Silicon Single-Hole Transistor with Large Coulomb Blockade Oscillations and High Voltage Gain at Room Temperature2005

    • Author(s)
      Hidehiro Harata, Masumi Saitoh, Toshiro Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics Vol.44, Part 2, No.20

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Extension of Coulomb Blockade Region by Quantum Confinement in the Ultrasmall Silicon Dot in a Single-Hole Transistor at Room Temperature2004

    • Author(s)
      Masumi Saitoh, Toshiro Hiramoto
    • Journal Title

      Applied Physics Letters Vol. 84, No. 16

      Pages: 3172-3174

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Room-temperature demonstration of highly-functional single-hole transistor logic based on quantum mechanical effect2004

    • Author(s)
      M. Saitoh, T. Hiramoto
    • Journal Title

      IEE Electronics Letters Vol. 40, No. 13

      Pages: 837-838

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Room-Temperature Demonstration of Low-Voltage and Tunable Static Memory Based on Negative Differential Conductance in Silicon Single-Electron Transistors2004

    • Author(s)
      M. Saitoh, H. Harata, T. Hiramoto
    • Journal Title

      Applied Physics Letters Vol. 85, No. 25

      Pages: 6233-6235

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Room-temper ature demonstration of highly-functional single-hole transistor logic based on quantum mechanical effect2004

    • Author(s)
      M. Saitoh, T. Hiramoto
    • Journal Title

      IEE Electronics Letters Vol. 40, No. 13

      Pages: 837-838

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Extension of Coulomb Blockade Region by Quantum Confinement in the Ultrasmall Silicon Dot in a Single-Hole Transistor at Room Temperature2004

    • Author(s)
      Masumi Saitoh, Toshiro Hiramoto
    • Journal Title

      Applied Physics Letters Vol.84 No.16

      Pages: 3172-3174

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Scaling of Nano-Crystal Memory Cell by Direct Tungsten Bitline on Self-Aligned Landing Plug Polysilicon Contact2004

    • Author(s)
      I.Kim, K.Yanagidaira, T.Hiramoto
    • Journal Title

      IEEE Electron Devices Letters Vol.25, No.5

      Pages: 265-267

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Room-temperature demonstration of highly-functional single-hole transistor logic based on quantum mechanical effect2004

    • Author(s)
      Masumi Saitoh, Toshihiro Hiramoto
    • Journal Title

      Applied Physics Letters Vol.85, No.25

      Pages: 6233-6235

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Room-temperature Operation of Current Switching Circuit Using Integrated Sillcon Single-Hole Transistors2004

    • Author(s)
      Masumi Saitoh, Hidehiro Harata, Toshihiro Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics Vol.44, No.11

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Transport in Ultrathin SOI MOSFETs and Silicon Nanowire Transistors

    • Author(s)
      T. Hiramoto (Invited)
    • Journal Title

      ECS Transactions Vol. 11, No. 6, ULSI Process Integration 5

      Pages: 403-411

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Transport in Silicon Nanowire Transistors2009

    • Author(s)
      Toshiro Hiramoto (Invited)
    • Organizer
      International Semiconductor Technology Conference and China Semiconductor Technology International Conference (ISTC/CSTIC 2009)
    • Place of Presentation
      中国上海
    • Year and Date
      2009-03-20
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Transport in Silicon Nanowire Transistors2009

    • Author(s)
      Toshiro Hiramoto (Invited)
    • Organizer
      International Semiconductor Technology Conference and China Semiconductor Technology International Conference (ISTC/CSTIC 2009) (p. 56)
    • Place of Presentation
      Sheraton Shanghai. Shanghai, China
    • Year and Date
      2009-03-20
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Silicon Nanowire FETs and Single-Electron/Hole Transistors under Uniaxial Strain at Room Temperature2009

    • Author(s)
      Toshiro Hiramoto, Jiezhi Chen, Yeon Joo Jeong, Takuya Saraya (Invited)
    • Organizer
      International Symposium on Nanoscale Transport and, Technology (NTT2009)
    • Place of Presentation
      厚木
    • Year and Date
      2009-01-22
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Silicon Nanowire FETs and Single-Electron/Hole Transistors under Uniaxial Strain at Room Temperature2009

    • Author(s)
      Toshiro Hiramoto, Jiezhi Chen, YeonJoo Jeong, Takuya Saraya (Invited)
    • Organizer
      International Symposium on Nanoscale Transport and Technology (NTT2009) (p. 99)
    • Place of Presentation
      NTT Atsugi R&C Center, Kanagawa
    • Year and Date
      2009-01-22
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Electron Mobility in Multiple Silicon Nanowires GAA nMOSFETs on (110) and (100) SOI at Room and Low Temperature2008

    • Author(s)
      Jiezhi Chen, Takuya Saraya, Toshiro Hiramoto
    • Organizer
      IEEE International Electron Devices Meeting (IEDM)
    • Place of Presentation
      米国サンフランシスコ
    • Year and Date
      2008-12-17
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Uniaxial Strain Effects on Silicon Nanowire pMOSFET and Single-Hole Transistor at Room Temperature2008

    • Author(s)
      Yeon Joo Jeong, Jiezhi Chen, Takuya Saraya, Toshiro Hiramoto
    • Organizer
      IEEE International Electron Devices Meeting (IEDM)
    • Place of Presentation
      米国サンフランシスコ
    • Year and Date
      2008-12-17
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Electron Mobility in Multiple Silicon Nanowires GAA nMOSFETs on (110) and (100) SOI at Room and Low Temperature2008

    • Author(s)
      Jiezhi Chen, Takuya Saraya, Toshiro Hiramoto
    • Organizer
      IEEE International Electron Devices Meeting (IEDM) (pp. 757 - 760)
    • Place of Presentation
      San Francisco, CA, USA
    • Year and Date
      2008-12-17
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Uniaxial Strain Effects on Silicon Nanowire pMOSFET and Single-Hole Transistor at Room Temperature2008

    • Author(s)
      YeonJoo Jeong, Jiezhi Chen, Takuya Saraya, Toshiro Hiramoto
    • Organizer
      IEEE International Electron Devices Meeting (IEDM) (pp. 761 - 764)
    • Place of Presentation
      San Francisco, CA. USA
    • Year and Date
      2008-12-17
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Experimental Investigation on the Origin of Direction Dependence of Si (110) Hole Mobility Utilizing Ultra-Thin Body pMOSFETs2008

    • Author(s)
      Ken Shimizu, Takuya Saraya, Toshiro Hiramoto
    • Organizer
      IEEE International Electron Devices Meeting (IEDM)
    • Place of Presentation
      米国サンフランシスコ
    • Year and Date
      2008-12-15
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Experimental Investigation on the Origin of Direction Dependence of Si (110) Hole Mobility Utilizing Ultra-Thin Body pMOSFETs2008

    • Author(s)
      Ken Shimizu, Takuya Saraya, Toshiro Hiramoto
    • Organizer
      IEEE International Electron Devices Meeting (IEDM) (pp. 67 - 70)
    • Place of Presentation
      San Francisco. CA, USA
    • Year and Date
      2008-12-15
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Evolutionary Trend of Silicon Nanoelectronics and Beyond CMOS Devices2008

    • Author(s)
      Toshiro Hiramoto (Invited)
    • Organizer
      Dry Process Symposium (DPS 2008)
    • Place of Presentation
      東京
    • Year and Date
      2008-11-27
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Evolutionary Trend of Silicon Nanoelectronics and Beyond CMOS Devices2008

    • Author(s)
      Toshiro Hiramoto (Invited)
    • Organizer
      Dry Process Symposium (DPS 2008) (pp. 109 - 110)
    • Place of Presentation
      Kokuyo Hall (Tokyo)
    • Year and Date
      2008-11-27
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Nanowire Channel Nanocrystal Memory with P-Doped Silicon Nanocrystals2008

    • Author(s)
      Toshiro Hiramoto, Yuji Takahashi, Kousuke Miyaji, Takuya Saraya
    • Organizer
      IEEE Nanotechnology Materials and Devices Conference
    • Place of Presentation
      京都
    • Year and Date
      2008-10-20
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Nanowire Channel Nanocrystal Memory with P-Doped Silicon Nanocrystals2008

    • Author(s)
      Toshiro Hiramoto, Yuji Takahashi, Kousuke Miyaji, Takuya Saraya
    • Organizer
      IEEE Nanotechnology Materials and Devices Conference (p. 57)
    • Place of Presentation
      Kyoto University
    • Year and Date
      2008-10-20
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Mobility and variability in Silicon Nanowire MOSFETs2008

    • Author(s)
      Toshiro Hiramoto, Masaharu Kobayashi, Jiezhi Chen (Invited)
    • Organizer
      14th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2008)
    • Place of Presentation
      韓国
    • Year and Date
      2008-08-27
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Experimental Study of Mobility in [110]- and[100]-Directed Multiple Silicon Nanowire GAA MOSFETs on (100) SOI2008

    • Author(s)
      Jiezhi Chen, Takuya Saraya, Kousuke Miyaji, Ken Shimizu, Toshiro Hiramoto
    • Organizer
      Symposium on VLSI Technology
    • Place of Presentation
      米国ハワイ
    • Year and Date
      2008-06-17
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Experimental Study of Mobility in [110]- and [100]-Directed Multiple Silicon Nanowire GAA MOSFETs on (100) SOI2008

    • Author(s)
      Jiezhi Chen, Takuya Saraya, Kousuke Miyaji, Ken Shimizu, Toshiro Hiramoto
    • Organizer
      Symposium on VLSI Technology (pp. 32 - 33)
    • Place of Presentation
      Hilton Hawaiian Village. HI. USA
    • Year and Date
      2008-06-17
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Experimental Study on Silicon Nanowire nMOSFET and Single-Electron Transistor at Room Temperature under Uniaxial Tensile Strain2008

    • Author(s)
      Yeon Joo Jeong, Kousuke Miyaji, Toshiro Hiramoto
    • Organizer
      IEEE Silicon Nanoelectronics Workshop
    • Place of Presentation
      米国ハワイ
    • Year and Date
      2008-06-16
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Experimental Study on Silicon Nanowire nMOSFET and Single-Electron Transistor at Room Temperature under Uniaxial Tensile Strain2008

    • Author(s)
      Yeon Joo Jeong, Kousuke Miyaji, Toshiro Hiramoto
    • Organizer
      IEEE Silicon Nanoelectronics Workshop, M0930
    • Place of Presentation
      Hilton Hawaiian Village. HI, USA
    • Year and Date
      2008-06-16
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Hole Mobility Enhancement by [110] Uniaxial Compressive Strain in (110) Oriented Ultra-Thin Body pFETs with SOI Thickness of Less Than 4nm2008

    • Author(s)
      Ken Shimizu, Toshiro Hiramoto
    • Organizer
      IEEE Silicon Nanoelectronics Workshop
    • Place of Presentation
      米国ハワイ
    • Year and Date
      2008-06-15
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Hole Mobility Enhancement by [110] Uniaxial Compressive Strain in (110) Oriented Ultra-Thin Body pFETs with SOI Thickness of Less Than 4 nm2008

    • Author(s)
      Ken Shimizu, Toshiro Hiramoto
    • Organizer
      IEEE Silicon NanoelectronicsWorkshop, SI 135.
    • Place of Presentation
      Hilton Hawaiian Village, HI, USA
    • Year and Date
      2008-06-15
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Silicon Nanoelectronics2008

    • Author(s)
      Toshiro Hiramoto (Invited)
    • Organizer
      MRS International Material Research Conference
    • Place of Presentation
      中国
    • Year and Date
      2008-06-11
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Silicon Nanoelectronics2008

    • Author(s)
      Toshiro Hiramoto (Invited)
    • Organizer
      MRS International Material Research Conference, Symposium D: Electronic Materials (p. 140)
    • Place of Presentation
      Chongqing International Convention & Exhibition Center, Chongqing, China
    • Year and Date
      2008-06-11
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Advanced Ultra-Thin-Body SOI and Silicon Nanowire MOSFETs2008

    • Author(s)
      Toshiro Hiramoto, Gen Tsutsui, Masaharu Kobayashi, Ken Shimizu
    • Organizer
      Interntional Symposium on Secure-Life Electronics -Advanced Electronics for Quality Life and Society-
    • Place of Presentation
      東京
    • Year and Date
      2008-03-07
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Advanced Ultra-Thin-Body SOI and Silicon Nanowire MOSFETs2008

    • Author(s)
      Toshiro Hiramoto, Gen Tsutsui, Masaharu Kobayashi, Ken Shimizu
    • Organizer
      International Symposium on Secure-Life Electronics -Advanced Electronics for Quality Life and Society- (pp. 539 - 544)
    • Place of Presentation
      University of Tokyo
    • Year and Date
      2008-03-07
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Mobility and Variability in Silicon Nanowire MOSFETs2008

    • Author(s)
      Toshiro Hiramoto, Masaharu Kobayashi, Jiezhi Chen (Invited)
    • Organizer
      14th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2008) (p. 192)
    • Place of Presentation
      Korea, Ramada Plaza Jeju Hotel. Jeju
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Transport in Ultra-Thin-Body SOI and Silicon Nanowire MOSFETs2007

    • Author(s)
      Toshiro Hiramoto, Gen Tsutsui, Ken Shimizu, Masaharu Kobayashi (Invited)
    • Organizer
      International Semiconductor Device Research Symposium (ISDRS)
    • Place of Presentation
      米国メリーランド
    • Year and Date
      2007-12-13
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Transport in Ultra-Thin-Body SOI and Silicon Nanowire MOSFRTs (TA6-02)2007

    • Author(s)
      Toshiro Hiramoto, Gen Tsutsui, Ken Shimizu, Masaharu Kobayashi (Invited)
    • Organizer
      International Semiconductor Device Research Symposium (ISDRS)
    • Place of Presentation
      University of Maryland. College Park, MD, USA
    • Year and Date
      2007-12-13
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Mobility Enhancement in Uniaxially Strained (110) oriented Ultra-Thin Body Single- and Double-Gate MOSFETs with SOI Thickness of less than 4 nm2007

    • Author(s)
      Ken Shimizu, Toshiro Hiramoto
    • Organizer
      International Electron Devices Meeting (IEDM)
    • Place of Presentation
      米国ワシントンDC
    • Year and Date
      2007-12-12
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Mobility Enhancement in Uniaxially Strained (110) oriented Ultra-Thin Body Single- and Double-Gate MOSFETs with SOI Thickness of less than 4 nm2007

    • Author(s)
      Ken Shimizu, Toshiro Hiramoto
    • Organizer
      International Electron Devices Meeting (IEDM) (pp. 715 - 718)
    • Place of Presentation
      Washington Hilton, Washington D. C, USA
    • Year and Date
      2007-12-12
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Silicon VLSI Device Technology and Nanoelectronics2007

    • Author(s)
      Toshiro Hiramoto (Plenary)
    • Organizer
      20th International Microprocesses and Nanotechnology Conference (MNC)
    • Place of Presentation
      京都
    • Year and Date
      2007-11-06
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Silicon VLSI Device Technology and Nanoe 1 ectron i cs2007

    • Author(s)
      Toshiro Hiramoto (Plenary)
    • Organizer
      20th International Microprocesses and Nanotechnology Conference (MNC) (p. 6 - 7)
    • Place of Presentation
      Kyoto International Conference Center
    • Year and Date
      2007-11-06
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Transport in Ultrathin SOI MOSFETs and Silicon Nanowire Transistors2007

    • Author(s)
      T. Hiramoto (Invited)
    • Organizer
      The Electrochemical Society (ECS) Fall Meeting
    • Place of Presentation
      米国ワシントンDC
    • Year and Date
      2007-10-11
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Transport in Ultrathin SOI MOSFETs and Silicon Nanowire Transistors2007

    • Author(s)
      T. Hiramoto (Invited)
    • Organizer
      The Electrochemical Society (ECS) Fall Meeting, Symposium on ULSI Integration 5
    • Place of Presentation
      Washington Hilton. Washington D. C, USA
    • Year and Date
      2007-10-11
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Suppression of Electron Mobility Degradation in (100)-Oriented Double-Gate Ultra-Thin Body nMOSFETs with SOI Thickness of Less Than 2 nm2007

    • Author(s)
      Ken Shimizu, Toshiro Hiramoto
    • Organizer
      IEEE International SOI Conference
    • Place of Presentation
      米国インディアンウェルズ
    • Year and Date
      2007-10-04
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Suppression of Electron Mobility Degradation in (100)-Oriented Double-Gate Ultra-Thin Body nMOSFETs with SOI Thickness of Less Than 2 nm2007

    • Author(s)
      Ken Shimizu, Toshiro Hiramoto
    • Organizer
      IEEE International SOI Conference, Miramonte Resort & Spa (pp. 145 - 146)
    • Place of Presentation
      Indian Wells, CA, USA
    • Year and Date
      2007-10-04
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Transport in Silicon Nanowire and Single-Electron Transistor2007

    • Author(s)
      Toshiro Hiramoto, Kousuke Miyaji, Masaharu Kobayashi (invited)
    • Organizer
      International Conference on Simulation of Semiconductor Devices and Processes (SISPAD)
    • Place of Presentation
      オーストリア
    • Year and Date
      2007-09-27
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Transport in Silicon Nanowire and Single-Electron Transistor2007

    • Author(s)
      Toshiro Hiramoto, Kousuke Miyaji, Masaharu Kobayashi (Invited)
    • Organizer
      International Conference on Simulation of Semiconductor Devices and Processes (SISPAD) (pp. 209-215)
    • Place of Presentation
      Vienna University of Technology, Vienna, Austria
    • Year and Date
      2007-09-27
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Mobility Degradation in (110)-Oriented Ultra-thin Body Double-Gate pMOSFETs with SOI Thickness of less than 5nm2007

    • Author(s)
      Ken Shimizu, Toshiro Hiramoto
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM)
    • Place of Presentation
      筑波
    • Year and Date
      2007-09-20
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Mobility Degradation 'in (HO)-Oriented Ultra-thin Body Double-Gate pMOSFETs with SOI Thickness of less than 5nm2007

    • Author(s)
      Ken Shimizu, Toshiro Hiramoto
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM) (pp. 732-733)
    • Place of Presentation
      Tsukuba International Congress Center
    • Year and Date
      2007-09-20
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Novel Long-Range-Extension of Coulomb Blockade Region in Room-Temperature Operating Silicon Single-Hole Transistor2007

    • Author(s)
      S. Lee, K. Miyaji, M. Kobayashi, T. Hiramoto
    • Organizer
      Silicon Nanoelectronics Workshop
    • Place of Presentation
      東京
    • Year and Date
      2007-06-10
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Novel Long-Range-Extension of Coulomb Blockade Region in Room-Temperature Operating Silicon Single-Hole Transistor2007

    • Author(s)
      S. Lee, K. Miyaji, M. Kobayashi, T. Hiramoto
    • Organizer
      Silicon Nanoelectronics Workshop (pp. 115 - 116)
    • Place of Presentation
      Rihga Royal Hotel Kyoto
    • Year and Date
      2007-06-10
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Novel Long-Range-Extension of Coulomb Blockade Region in Room-Temperature Operating Silicon Single-Hole Transistor2007

    • Author(s)
      S. Lee, K. Miyaji, M. Kobayashi, T. Hiramoto
    • Organizer
      Silicon Nanoelectronics Workshop
    • Place of Presentation
      京都
    • Year and Date
      2007-06-10
    • Related Report
      2007 Annual Research Report
  • [Presentation] Silicon Single-Electron Transistor operating at Room Temperature2007

    • Author(s)
      Toshiro, Hiramoto
    • Organizer
      The 1st NNL-IIS Workshop on Nanotechnology, Institute of Industrial Science
    • Place of Presentation
      東京
    • Year and Date
      2007-05-16
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Silicon Single-Electron Transistor Operating at Room Temperature2007

    • Author(s)
      Toshiro Hiramoto
    • Organizer
      The 1st NNL-IIS Workshop on Nanotechnology (p. 10)
    • Place of Presentation
      Institute of Industrial Science, University of Tokyo
    • Year and Date
      2007-05-16
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Characteristics Variation in Silicon Nanowire Transistors2007

    • Author(s)
      Toshiro, Hiramoto, Masanaru Kobayashi
    • Organizer
      3rd International Nanotechnology Conference on Communication and Cooperation
    • Place of Presentation
      ベルギー
    • Year and Date
      2007-04-17
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Characteristics Variation in Silicon Nanowire Transistors2007

    • Author(s)
      Toshiro Hiramoto, Masanaru Kobayashi
    • Organizer
      3rd International Nanotechnology Conference on Communication and Cooperation
    • Place of Presentation
      Brussels. Belgium
    • Year and Date
      2007-04-17
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Nanoscale Silicon Devices Using Nanostructure Physics for VLSI Applications2007

    • Author(s)
      Toshiro Hiramoto, Kousuke Miyaji, Masaharu Kobayashi (Invited)
    • Organizer
      Fifth Hiroshima International Workshop on Nanoelectronics for Tera-Bit Information Processing
    • Place of Presentation
      東京
    • Year and Date
      2007-01-29
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Nanoscale Silicon Devices Using Nanostructure Physics for VLSI Applications2007

    • Author(s)
      Toshiro Hiramoto, Kousuke Miyaji, Masaharu Kobayashi (Invited)
    • Organizer
      Fifth Hiroshima International Workshop on Nanoelectronics for Tera-Bit Information Processing (pp. 32 - 35)
    • Place of Presentation
      Campus Innovation Center (Tokyo)
    • Year and Date
      2007-01-29
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Experimental Study on Quantum Structure of Silicon Nano Wire and Its Impact on Nano Wire MOSFET and Single-Electron Transistor2006

    • Author(s)
      Masaharu, Kobayashi, Toshiro Hiramoto
    • Organizer
      IEEE International Electron Devices Meeting (IEDM)
    • Place of Presentation
      米国サンフランシスコ
    • Year and Date
      2006-12-11
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Integrated single-electron transistor circuits on SOI basis2006

    • Author(s)
      Toshiro, Hiramoto, (Invited)
    • Organizer
      NATO Advanced Research Workshop "Nanoscaled Semiconductor-on-Insulator Structures and Devices"
    • Place of Presentation
      ウクライナ
    • Year and Date
      2006-10-19
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Experimental Study on Mobility Universality in (100) Ultra Thin Body nMOSFET with SOI Thickness of 5nm"2006

    • Author(s)
      Ken Shimizu, Gen Tsutsui, Toshiro Hiramoto
    • Organizer
      2006 IEEE International SOI Conference
    • Place of Presentation
      米国ニューヨーク
    • Year and Date
      2006-10-05
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Charge Polarity Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Charge Transistors2006

    • Author(s)
      Masaharu Kobayashi, Kousuke Miyaii, Toshiro Hiramoto
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM)
    • Place of Presentation
      横浜
    • Year and Date
      2006-09-15
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Room Temperature Demonstration of Variable Full Width at Half Maximum of Coulomb Oscillation in Silicon Single-Hole Transistor2006

    • Author(s)
      Kousuke, Miyaji, Toshiro Hiramoto
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM)
    • Place of Presentation
      横浜
    • Year and Date
      2006-09-15
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Experimental Study on Breakdown of Mobility Universality in <100>-Directed (110)-Oriented pMOSFETs2006

    • Author(s)
      K. Shimizu, G. Tsutsui, D. Januar, T. Saraya, T. Hiramoto
    • Organizer
      IEEE Silicon Nanoelectronics Workshop
    • Place of Presentation
      米国ホノルル
    • Year and Date
      2006-06-11
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Mobility Enhancement in (110)-Oriented Ulta-Thin-Body Single-Gate and Double-Gate SOI MOSFETs2006

    • Author(s)
      T. Hiramoto, G. Tsutsui, M. Saitoh, T. Nagumo, T. Saraya
    • Organizer
      International Workshop on Nano CMOS
    • Place of Presentation
      静岡
    • Year and Date
      2006-01-30
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Room-temperature operating Silicon Single-Electron/Hole Transistors and Their Modeling2006

    • Author(s)
      Toshiro Hiramoto, Masumi Saitoh, Kousuke Miyaji, Masaharu Kobayashi (Invited)
    • Organizer
      IEEE Conference on Emerging Technologies -Nanoelectronics (NanoSingapore 2006)
    • Place of Presentation
      シンガポール
    • Year and Date
      2006-01-11
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Room-temperature Operating Silicon Single-Electron/Hole Transistors and Their Modeling2006

    • Author(s)
      Toshiro Hiramoto, Masumi Saitoh, Kousuke Miyaji, Masaharu Kobayashi (Invited)
    • Organizer
      IEEE Conference on Emerging Technologies - Nanoelectronics (NanoSingapore 2006) (pp. 324 - 326)
    • Place of Presentation
      Meritus Mandarin Singapore, Singapore
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Mobility Enhancement in (110)-Oriented Ulta-Thin-Body Single-Gate and Double-Gate SOI MOSFETs2006

    • Author(s)
      T. Hiramoto, G. Tsutsui, M. Saitoh, T. Nagumo, T. Saraya
    • Organizer
      International Workshop on Nano CMOS (pp. 14-15)
    • Place of Presentation
      Toray Sougou Kensyu Center, Mishima, Shizuoka
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Experimental Study on Breakdown of Mobility Universality in <100>-Directed (110)-Oriented pMOSFETs2006

    • Author(s)
      K. Shimizu, G. Tsutsui, D. Januar. T. Saraya, T. Hiramoto
    • Organizer
      IEEE Silicon Nanoelectronics Workshop (pp. 11-12)
    • Place of Presentation
      Hilton Hawaiian Village, Honolulu, HI, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Charge Polarity Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Charge Transistors2006

    • Author(s)
      Masaharu Kobayashi, Kousuke Miyaji, Toshiro Hiramoto
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM) (pp. 806 - 807)
    • Place of Presentation
      Pacificko Yokohama
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Room Temperature Demonstration of Variable Full Width at Half Maximum of Coulomb Oscillation in Silicon Single-Hole Transistor2006

    • Author(s)
      Kousuke Miyaji, Toshiro Hiramoto
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM) (pp. 836 - 837)
    • Place of Presentation
      Pacificko Yokohama
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Experimental Study on Mobility Universality in (100) Ultra Thin Body nMOSFET with SOI Thickness of 5nm2006

    • Author(s)
      Ken Shimizu, Gen Tsutsui, Toshiro Hiramoto
    • Organizer
      2006 IEEE International SOI Conference (pp. 159-160)
    • Place of Presentation
      Niagara Falls, NY, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Integrated single-electron transistor circuits on SOI basis2006

    • Author(s)
      Toshiro Hiramoto (Invited)
    • Organizer
      NATO Advanced Research Workshop "Nanoscaled Semiconductor-on-Insulator Structures and Devices" (pp. 93 - 94)
    • Place of Presentation
      Sudak, Crimea, Ukraine
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Experimental Study on Quantum Structure of Silicon Nano Wire and Its Impact on Nano Wire MOSFET and Single-Electron Transistor2006

    • Author(s)
      Masaharu Kobayashi, Toshiro Hiramoto
    • Organizer
      IEEE International Electron Devices Meeting (IEDM) (pp. 1007 - 1009)
    • Place of Presentation
      San Francisco. CA, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] On the Accuracy of Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels2005

    • Author(s)
      Kousuke Miyaji, Masaharu Kobayashi, Tetsu Ohtou, Toshiro Hiramoto
    • Organizer
      International Semiconductor Device Research Symposium
    • Place of Presentation
      米国ベセスダ
    • Year and Date
      2005-12-08
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Large Temperature Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Electron/Single-Hole Transistor2005

    • Author(s)
      Masaharu Kobayashi, Kousuke Miyaji, Masumi Saitoh, Toshiro Hiramoto
    • Organizer
      International Semiconductor Device Research Symposium
    • Place of Presentation
      米国ベセスダ
    • Year and Date
      2005-12-08
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Mobility Enhancement due to Volume Inversion in (110)-oriented Ultra-thin Body Double-gate nMOSFETs with Body Thickness less than 5 nm2005

    • Author(s)
      Gen Tsutsui, Masumi Saitoh, Takuya Saraya, Toshiharu Nagumo, Toshiro Hiramoto
    • Organizer
      International Electron Devices Meeting (IEDM)
    • Place of Presentation
      米国ワシントン
    • Year and Date
      2005-12-07
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Silicon Nano Devices -Nano-CMOS and Single-Electron Transistors-2005

    • Author(s)
      Toshiro Hiramoto
    • Organizer
      International Symposium on Quantum Dots and Nanoelectronics
    • Place of Presentation
      東京
    • Year and Date
      2005-11-18
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Non-Classical and Nanoscale Silicon Devices for Future VLSI Applications2005

    • Author(s)
      Toshiro Hiramoto, Masumi Saitoh, Gen Tsutsui, Toshiharu Nagumo, Tetsu Ohtou
    • Organizer
      International Symposium on Advanced Electronics for Future Generations-"Secure-Life Electronics"for Quality Life and Society-
    • Place of Presentation
      東京
    • Year and Date
      2005-10-12
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Mobility Increase in High-Ns Region in (110)-Oriented UTB pMOSFET Through Surface Roughness Improvement2005

    • Author(s)
      Doni Januar, Gen Tsutsui, Masumi Saitoh, Toshiro Hiramoto
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM)
    • Place of Presentation
      神戸
    • Year and Date
      2005-09-14
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage Gain2005

    • Author(s)
      Kousuke Miyaji, Masumi Saitoh, Toshiro Hiramoto
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM)
    • Place of Presentation
      神戸
    • Year and Date
      2005-09-13
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature Operating Silicon Single-Hole Transistor2005

    • Author(s)
      Masaharu Kobayashi, Masumi Saitoh, Toshiro Hiramoto
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM)
    • Place of Presentation
      神戸
    • Year and Date
      2005-09-13
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Superior Mobility Characteristics in (110)-Oriented Ultra Thin Body pMOSFETs with SOI Thickness less than 6 nm2005

    • Author(s)
      Gen Tsutsui, Masumi Saitoh, Toshiro Hiramoto
    • Organizer
      Symposium on VLSI Technology
    • Place of Presentation
      京都
    • Year and Date
      2005-06-15
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] FinFET-Type Silicon Nanocrystal Memories with Ultranarrow Channel2005

    • Author(s)
      Kosuke Yanagidaira, Masumi Saitoh, Toshiro Hiramoto
    • Organizer
      Silicon Nanoelectronics Workshop
    • Place of Presentation
      京都
    • Year and Date
      2005-06-13
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels2005

    • Author(s)
      Kousuke Miyaji, Masumi Saitoh, Toshiro Hiramoto
    • Organizer
      Silicon Nanoelectronics Workshop
    • Place of Presentation
      京都
    • Year and Date
      2005-06-13
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Silicon Nano Devices : Taking Full Advantage of Physics in Silicon Nanostructures2005

    • Author(s)
      T. Hiramoto (Invited)
    • Organizer
      First International Nanotechnology Conference on Communication and Cooperation (INC1)
    • Place of Presentation
      米国サンフランシスコ
    • Year and Date
      2005-06-02
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Silicon Nanocrystal Memories and Single Electron Transistors2005

    • Author(s)
      T. Hiramoto (Invited)
    • Organizer
      Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4)
    • Place of Presentation
      淡路島
    • Year and Date
      2005-05-23
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Circuit Applications of Room-Temperature Operating Silicon Single Electron/Hole Transistors2005

    • Author(s)
      T. Hiramoto
    • Organizer
      JSPS-AF Nano Science and Nano Technology Workshop
    • Place of Presentation
      東京
    • Year and Date
      2005-05-13
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Emerging Devices for Post-Classical CMOS - from Memory, Logic to Architectures2005

    • Author(s)
      T. Hiramoto (Plenary)
    • Organizer
      2005 International Symposium on VLSI Technology (VLSI-TSA-TECH)
    • Place of Presentation
      台湾
    • Year and Date
      2005-04-25
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Circuit Applications of Room-Temperature Operating Silicon Single Electron/Hole Transistors2005

    • Author(s)
      Toshiro Hiramoto
    • Organizer
      2005 Sweden-Japan International Workshop on Quantum Nano-Physics and Electronics
    • Place of Presentation
      京都
    • Year and Date
      2005-04-08
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Circuit Applications of Silicon Single Hole Transistors Operating at Room Temperature2005

    • Author(s)
      T. Hiramoto, M. Saitoh
    • Organizer
      International Symposium on Quantum Dots and Photonic Crystals, (ISQDPC)
    • Place of Presentation
      東京
    • Year and Date
      2005-03-07
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Circuit Applications of Silicon Single Hole Transistors Operating at Room Temperature2005

    • Author(s)
      T. Hiramoto, M. Saitoh
    • Organizer
      International Symposium on Quantum Dots and Photonic Crystals, (ISQDPC) (p. 10)
    • Place of Presentation
      Toranomon Pastoral. Tokyo
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Circuit Applications of Room-Temperature Operating Silicon Single Electron/Hole Transistors2005

    • Author(s)
      T. Hiramoto
    • Organizer
      2005 Sweden - Japan International Workshopon Quantum Nano-Physics and Electronics (p. 22)
    • Place of Presentation
      Campus Plaza, Kyoto
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Emerging Devices for Post-Classical CMOS -from Memory, Logic to Architectures2005

    • Author(s)
      T. Hiramoto (Plenary)
    • Organizer
      2005 International Symposium on VLSI Technology (VLSI-TSA-TECH) (pp. 1 -4)
    • Place of Presentation
      Ambassador Hotel, Hsinchu. Taiwan
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Circuit Applications of Room-Temperature Operating Silicon Single Electron/Hole Transistors2005

    • Author(s)
      T. Hiramoto
    • Organizer
      JSPS-AF Nano Science and Nano Technology Workshop
    • Place of Presentation
      JSPS Head Office, Tokyo
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Silicon Nanocrystal Memories and Single Electron Transistors2005

    • Author(s)
      T. Hiramoto (Invited)
    • Organizer
      Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4) (pp. 24 - 25)
    • Place of Presentation
      Awaji Island. Hyogo. Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Silicon Nano Devices: Taking Full Advantage of Physics in Silicon Nanostructures2005

    • Author(s)
      T. Hiramoto (Invited)
    • Organizer
      First International Nanotechnology Conference on Communication and Cooperation (INC1)
    • Place of Presentation
      Marriott Hotel, San Francisco, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] FinFETType Silicon Nanocrystal Memories with Ultranarrow Channel2005

    • Author(s)
      Kosuke Yanagidaira, Masumi Saitoh, Toshiro Hiramoto
    • Organizer
      Silicon Nanoelectronics Workshop (pp. 100 - 101)
    • Place of Presentation
      Rihga Royal Hotel Kyoto
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels2005

    • Author(s)
      Kousuke Miyaji, Masumi Saitoh, Toshiro Hiramoto
    • Organizer
      Silicon Nanoelectronics Workshop (pp. 82 - 83)
    • Place of Presentation
      Rihga Royal Hotel Kyoto
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Superior Mobility Characteristics in (110)-Oriented Ultra Thin Body pMOSFETs with SOI Thickness less than 6nm2005

    • Author(s)
      Gen Tsutsui, Masumi Saitoh, Toshiro Hiramoto
    • Organizer
      Symposium on VLSI Technology (pp. 76 - 77)
    • Place of Presentation
      Rihga Royal Hotel Kyoto
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage Gain2005

    • Author(s)
      Kousuke Miyaji, Masumi Saitoh, Toshiro Hiramoto
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM) (pp. 166 - 167)
    • Place of Presentation
      International Conference Center Kobe, Hyogo
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature Operating Silicon Single-Hole Transistor2005

    • Author(s)
      Masaharu Kobayashi, Masumi Saitoh, Toshiro Hiramoto
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM) (pp. 164 - 165)
    • Place of Presentation
      International Conference Center Kobe, Hyogo
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Mobility Increase in High-Ns Region in (110)-Oriented UTB pMOSFET Through Surface Roughness Improvement2005

    • Author(s)
      Doni Januar, Gen Tsutsui, Masumi Saitoh, Toshiro Hiramoto
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM) (pp. 264 - 265)
    • Place of Presentation
      International Conference Center Kobe, Hyogo
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Non-Classical and Nanoscale Silicon Devices for Future VLSI Applications2005

    • Author(s)
      Toshiro Hiramoto, Masumi Saitoh, Gen Tsutsui, Toshiharu Nagumo, Tetsu Ohtou
    • Organizer
      International Symposium on Advanced Electronics for Future Generations-"Secure-Li fe Electronics'" for Quality Life and Society - (pp. 87 - 91)
    • Place of Presentation
      University of Tokyo
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Silicon Nano Devices -Nano-CMOS and Single-Electron Transistors-2005

    • Author(s)
      Toshiro Hiramoto
    • Organizer
      International Symposium on Quantum Dots and Nanoelectronics
    • Place of Presentation
      Tokyo Garden Palace, Tokyo
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Mobility Enhancement due to Volume Inversion in (110)-oriented Ultra-thin Body Double-gate nMOSFETs with Body Thickness less than 5 nm2005

    • Author(s)
      Gen Tsutsui, Masumi Saitoh, Takuya Saraya, Toshiharu Nagumo, Toshiro Hiramoto
    • Organizer
      International Electron Devices Meeting (1EDM) (pp. 747-750)
    • Place of Presentation
      Washington D. C., USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] On the Accuracy of Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels (WP7-07-06)2005

    • Author(s)
      Kousuke Miyaji, Masaharu Kobayashi, Tetsu Ohtou., Toshiro Hiramoto
    • Organizer
      International Semiconductor Device Research Symposium
    • Place of Presentation
      Bethesda, MD. USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Large Temperature Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Electron/Single-Hole Transistor (TP3-O3)2005

    • Author(s)
      Masaharu Kobayashi, Kousuke Miyaji, Masumi Saitoh, Toshiro Hiramoto
    • Organizer
      International Semiconductor Device Research Symposium
    • Place of Presentation
      Bethesda. MD. USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Room-Temperature Demonstration of Integrated Silicon Single-Electron Transistor Circuits for Current Switching and Analog Pattern Matching2004

    • Author(s)
      Masumi Saitoh, Hidehiro Harata, Toshiro Hiramoto
    • Organizer
      IEEE Electron Devices Meeting (IEDM)
    • Place of Presentation
      米国サンフランシスコ
    • Year and Date
      2004-12-13
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] High Functionality in Room-Temperature Operating Single-Electron Transistors and Silicon Nanocrystal Memories2004

    • Author(s)
      Toshiro Hiramoto (Invited)
    • Organizer
      Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD2004)
    • Place of Presentation
      オーストラリア
    • Year and Date
      2004-12-08
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Si Nanoelectronics - Single-Electron Transistors and Other Nano Devices-2004

    • Author(s)
      T. Hiramoto
    • Organizer
      International Symposium on Frontier of Nanometer Electronics and Optoelectronics
    • Place of Presentation
      台湾
    • Year and Date
      2004-12-03
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Integration and Performance Improvements of Silicon Nanocrystal Memories2004

    • Author(s)
      T. Hiramoto, I. Kim, M. Saitoh, K. Yanagidaira (Invited)
    • Organizer
      Material Research Symposium
    • Place of Presentation
      米国ボストン
    • Year and Date
      2004-11-30
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Circuit Applications of Silicon Single-Electron Transistors Operating at Room Temperature2004

    • Author(s)
      T. Hiramoto, M. Saitoh, H. Harata, T. Sakurai
    • Organizer
      Frontiers in Nanoscale Science and Technology
    • Place of Presentation
      米国ボストン
    • Year and Date
      2004-10-25
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Temperature Dependence of Off-Current in Bulk and FD SOI MOSFETs2004

    • Author(s)
      K. Miyaji, M. Saitoh, T. Nagumo, T. Hiramoto
    • Organizer
      International Conference on Solid State Devices and Materials
    • Place of Presentation
      東京
    • Year and Date
      2004-09-16
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Impact of Drain Induced Barrier Lowering on Read Scheme in Silicon Nanocrystal Memory with Two-Bit-per-Cell Operation2004

    • Author(s)
      S. Park, H. Im, I. Kim, T. Hiramoto
    • Organizer
      International Conference on Solid State Devices and Materials
    • Place of Presentation
      東京
    • Year and Date
      2004-09-16
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Room Temperature Demonstration of Low-Voltage Static Memory Based on Negative Differential Conductance in Silicon Single-Hole Transistors2004

    • Author(s)
      M. Saitoh, H. Harata, T. Hiramoto
    • Organizer
      International Conference on Solid State Devices and Materials
    • Place of Presentation
      東京
    • Year and Date
      2004-09-15
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Large Threshold Voltage Shift and Narrow Threshold Voltage Distribution in Ultra Thin Body Silicon Nanocrystal Memories2004

    • Author(s)
      K. Yanagidaira, M. Saitoh, T. Hiramoto
    • Organizer
      International Conference on Solid State Devices and Materials
    • Place of Presentation
      東京
    • Year and Date
      2004-09-15
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Channel Width and Length Dependence in Si Nano-Crystal Memories with Ultra Nano-Scale Channel2004

    • Author(s)
      Julien Brault, Masumi Saitoh, Toshiro Hiramoto
    • Organizer
      IEEE Silicon Nanoelectronics Workshop
    • Place of Presentation
      米国ホノルル
    • Year and Date
      2004-06-14
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Silicon Single-Hole Transistor with Large Coulomb Blockade Oscillations and High Voltage Gain at Room Temperature2004

    • Author(s)
      Hidehiro Harata, Masumi Saitoh, Toshiro Hiramoto
    • Organizer
      IEEE Silicon Nanoelectronics Workshop
    • Place of Presentation
      米国ホノルル
    • Year and Date
      2004-06-14
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Performance Improvements in Silicon Nanocrystal Memories with Ultra-Thin-Body Double-Gate Structure2004

    • Author(s)
      Kousuke Yanagidaira, Masumi Saitoh, Toshiro Hiramoto
    • Organizer
      IEEE Silicon Nanoelectronics Workshop
    • Place of Presentation
      米国ホノルル
    • Year and Date
      2004-06-14
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Impact of SOI Thickness Fluctuation on Threshold Voltage Variation in Ultra Thin Body SOI MOSFETs2004

    • Author(s)
      Gen Tsutsui, Masumi Saitoh, Toshiharu Nagumo, Toshiro Hiramoto
    • Organizer
      IEEE Silicon Nanoelectronics Workshop
    • Place of Presentation
      米国ホノルル
    • Year and Date
      2004-06-13
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Channel Width and Length Dependence in Si Nano-Crystal Memories with Ultra Nano-Scale Channel2004

    • Author(s)
      Julien Brault, Masumi Saitoh, Toshiro Hiramoto
    • Organizer
      IEEE Silicon Nanoelectronics Workshop (pp. 103 - 104)
    • Place of Presentation
      Hilton Hawaiian Village. Honolulu, HI, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Impact of SOI Thickness Fluctuation on Threshold Voltage Variation in Ultra Thin Body SOI MOSFETs2004

    • Author(s)
      Gen Tsutsui, Masumi Saitoh, Toshiharu Nagumo, Toshiro Hiramoto
    • Organizer
      IEEE Silicon Nanoelectronics Workshop (pp. 25 - 26)
    • Place of Presentation
      Hilton Hawaiian Village, Honolulu. HI, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Silicon Single-Hole Transistor with Large Coulomb Blockade Oscillations and High Voltage Gain at Room Temperature2004

    • Author(s)
      Hidehiro Harata, Masumi Saitoh, Toshiro Hiramoto
    • Organizer
      IEEE Silicon Nanoelectronics Workshop (pp. 81- 82)
    • Place of Presentation
      Hilton Hawaiian Village. Honolulu, HI, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Performance Improvements in Silicon Nanocrystal Memories with Ultra-Thin-Body Double-Gate Structure2004

    • Author(s)
      Kousuke Yanagidaira, Masumi Saitoh, Toshiro Hiramoto
    • Organizer
      (pp. 141-142)
    • Place of Presentation
      Hilton Hawaiian Village. Honolulu. HI. USA.
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Room Temperature Demonstration of Low-Voltage Static Memory Based on Negative Differential Conductance in Silicon Single-Hole Transistors2004

    • Author(s)
      M. Saitoh, H. Harata, T. Hiramoto
    • Organizer
      International Conference on Solid State Devices and Materials (pp. 124 - 125)
    • Place of Presentation
      Tower Hall Funabori, Tokyo
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Temperature Dependence of Off-Current in Bulk and FD SOI MOSFETs2004

    • Author(s)
      K. Miyaji, M. Saitoh, T. Nagumo, T. Hiramoto
    • Organizer
      International Conference on Solid State Devices and Materials (pp. 236 - 237)
    • Place of Presentation
      Tower Hall Funabori, Tokyo
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Large Threshold Voltage Shift and Narrow Threshold Voltage Distribution in Ultra Thin Body Silicon Nanocrystal Memories2004

    • Author(s)
      K. Yanagidaira, M. Saitoh, T. Hiramoto
    • Organizer
      International Conference on Solid State Devices and Materials (pp. 130 - 131)
    • Place of Presentation
      Tower Hall Funabori, Tokyo
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Impact of Drain Induced Barrier Lowering on Read Scheme in Silicon Nanocrystal Memory with Two-Bit-per-Cell Operation2004

    • Author(s)
      S. Park, H. Im, I. Kim, T. Hiramoto
    • Organizer
      International Conference on Solid State Devices and Materials (pp. 610 - 611)
    • Place of Presentation
      Tower Hall Funabori, Tokyo
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Circuit Applications of Silicon Single-Electron Transistors Operating at Room Temperature2004

    • Author(s)
      T. Hiramoto, M. Saitoh, H. Harata, T. Sakurai
    • Organizer
      Frontiers in Nanoscale Science and Technology
    • Place of Presentation
      Harvard University, Boston, MA, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Integration and Performance Improvements of Silicon Nanocrystal Memories2004

    • Author(s)
      T. Hiramoto, I. Kim, M. Saitoh, K. Yanagidaira (Invited)
    • Organizer
      Symposium D "Materials and Processes for Nonvolatile Memories", Material Research Symposium ( p. 81)
    • Place of Presentation
      Hynes Convention Center and Sheraton Boston Hotel, MA, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Si Nanoelectronics - Single-Electron Transistors and Other Nano Devices -2004

    • Author(s)
      T. Hiramoto
    • Organizer
      International Symposium on Frontier of Nanometer Electronics and Optoelectronics
    • Place of Presentation
      National Chiao Tung University, Taiwan
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] High Functionality in Room-Temperature Operating Single-Electron Transistors and Silicon Nanocrystal Memories2004

    • Author(s)
      Toshiro Hiramoto (Invited)
    • Organizer
      Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) (p. 15)
    • Place of Presentation
      The University of Queensland, Brisbane, Australia
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Room-Temperature Demonstration of Integrated Silicon Single-Electron Transistor Circuits for Current Switching and Analog Pattern Matching2004

    • Author(s)
      Masumi Saitoh, Hidehiro Harata, Toshiro Hiramoto
    • Organizer
      IEEE Electron Devices Meeting (IEDM) (pp. 187 - 190)
    • Place of Presentation
      San Francisco, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Book] "Integration of Silicon Single-Electron Transistors Operating at Room Tem perature", NATO Science for Peace and Security Series-B : Physics and Biophysics "Nanoscaled Semiconductor-on-Insulator Structures and Devices2007

    • Author(s)
      Toshiro Hiramoto
    • Total Pages
      16
    • Publisher
      NATO
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Book] Chapter 4 : Quantum Effects in Silicon Nanodevices", Silicon Nanoelectronics2006

    • Author(s)
      Toshiro Hiramoto
    • Total Pages
      20
    • Publisher
      Taylor & Francis
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Book] 「6.1. 電子1個でもトランジスタは動く? 」「6.2. シリコン単電子トランジスタの室温動作」, 科学立国日本を築く : 極限に挑む気鋭の研究者たち2006

    • Author(s)
      平本俊郎
    • Total Pages
      10
    • Publisher
      (財)丸文研究交流財団選考委員会
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Book] "Chapter 6. Room-Temperature Operating Silicon Single-Electron Transistors, " in Handbook of Semiconductor Nanostructures and Devices2006

    • Author(s)
      Masumi Saitoh, Toshiro Hiramoto
    • Total Pages
      41
    • Publisher
      American Scientific Publishers
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Patent(Industrial Property Rights)] 半導体装置2005

    • Inventor(s)
      平本俊郎, 筒井元, 齋藤真澄
    • Industrial Property Rights Holder
      (財)生産技術研究奨励会
    • Industrial Property Number
      2005-170676
    • Filing Date
      2005-06-10
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Patent(Industrial Property Rights)] 不揮発性メモリ2004

    • Inventor(s)
      平本俊郎, 柳平康輔, 齋藤真澄
    • Industrial Property Rights Holder
      (財)生産技術研究奨励会
    • Industrial Property Number
      2004-267143
    • Filing Date
      2004-09-14
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary

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Published: 2004-04-01   Modified: 2016-04-21  

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