| Budget Amount *help |
¥50,180,000 (Direct Cost: ¥38,600,000、Indirect Cost: ¥11,580,000)
Fiscal Year 2006: ¥14,690,000 (Direct Cost: ¥11,300,000、Indirect Cost: ¥3,390,000)
Fiscal Year 2005: ¥14,690,000 (Direct Cost: ¥11,300,000、Indirect Cost: ¥3,390,000)
Fiscal Year 2004: ¥20,800,000 (Direct Cost: ¥16,000,000、Indirect Cost: ¥4,800,000)
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| Research Abstract |
It is well known that the grain size of a certain type of steel can be quite large. In this project, we tried to grow pseudo-single crystalline Si on the steel substrates by a newly developed growth technique called "universal heteroepitaxial growth" and fabricate simple semiconductor devices. It should be noted that with this technique, we could fabricate soft semiconductor devices with a large area at low cost. Firstly, we developed a pulsed sputtering deposition technique by which we can grow semiconductor films epitaxially even at room temperature. This technique is quite suitable for the purpose of this project because substrate size can be easily scaled up. With this technique, we tried to grow an insulating AIN buffer layer and a conductive HfN buffer layer on the steel substrates. We have found that high quality single crystalline HfN(111), HfN(100), and AlN(0001) can be grown successfully on the substrates. We also tried to grow Si which are widely used as a material for electron devices and found that high quality single crystalline Si(100) and Si(111) can be grown on them. Schottky diodes were fabricated with the semiconductors and successful rectifying properties were experimentally confirmed. These results indicate that the universal heteroepitaxial growth technique allows us to grow high quality Si films on the steel substrates and to fabricate future large-area flexible devices at low cost.
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