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Development of bulk GaN single crystal substrate for high-power ultra-violet laser diodes

Research Project

Project/Area Number 16206009
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied optics/Quantum optical engineering
Research InstitutionOsaka University

Principal Investigator

SASAKI Takatomo  Osaka Univ., Graduate school of engineering, Professor, 大学院工学研究科, 教授 (50029237)

Co-Investigator(Kenkyū-buntansha) MORI Yusuke  Osaka Univ., Graduate school of engineering, Associate Professor, 大学院工学研究科, 助教授 (90252618)
YOSHIMURA Masashi  Osaka Univ., Graduate school of engineering, Assistant Professor, 大学院工学研究科, 助手 (60314382)
川村 史朗  大阪大学, 工学研究科, 日本学術振興会特別研究員
北岡 康夫  松下電器産業(株), 先行デバイス開発センター, 主任研究員
Project Period (FY) 2004 – 2006
Project Status Completed (Fiscal Year 2006)
Budget Amount *help
¥45,500,000 (Direct Cost: ¥35,000,000、Indirect Cost: ¥10,500,000)
Fiscal Year 2006: ¥9,750,000 (Direct Cost: ¥7,500,000、Indirect Cost: ¥2,250,000)
Fiscal Year 2005: ¥9,750,000 (Direct Cost: ¥7,500,000、Indirect Cost: ¥2,250,000)
Fiscal Year 2004: ¥26,000,000 (Direct Cost: ¥20,000,000、Indirect Cost: ¥6,000,000)
KeywordsGaN single crystal / Na flux / low dislocation density / bulk / LPE / liquid phase epitaxy / LED / light emitting diode / GaN / 単結晶 / 基板 / フラックス法 / 発光デバイス / 半導体レーザー
Research Abstract

In this research, we developed a full-fledged apparatus for the growth of a two-inch GaN single crystal substrate. The apparatus was designed based on the following points; 1.the electric furnace was set in a pressure-resistant chamber having a water cooling system for the growth at severe conditions, 2.the solution could be stirred by back and force the chamber. We succeeded in the growth of a two-inch GaN single crystal substrate with the dislocation density of 2.3 × 10^5 com^<-2> using this apparatus for the first time. In addition, the growth rate of 30 μm/h was achieved by optimizing the growth conditions while dislocation density was kept at 3 × 10^5 cm^<-2>.
Impurity concentration in the crystal was measured by the secondary ion mass spectrometer (SIMS). The Na content in the crystal was at an extremely low level of 4.2 × 10^<14> cm^<-3> and oxygen was slightly detected, which is enough low concentration for avoiding giving harmful affect on device performance.
Emission property of LED fabricated on GaN substrate grown by this method was improved in comparison to that fabricated on the other substrates such as sapphire and GaN grown by hydride vapor phase (HVPE) epitaxy method.
These results have been published in many scientific papers as shown on the attached paper and attracted great attention. As mentioned above, this research enabled to produce large-scaled GaN substrate with high quality.

Report

(4 results)
  • 2006 Annual Research Report   Final Research Report Summary
  • 2005 Annual Research Report
  • 2004 Annual Research Report
  • Research Products

    (24 results)

All 2007 2006 2005 2004

All Journal Article (24 results)

  • [Journal Article] Fabrication of a-Plane GaN Substrate Using the Sr-Na Flux Liquid Phase Epitaxy Technique.2007

    • Author(s)
      T.IWAHASHI, Y.KITAOKA, M.KAWAHARA, F.KAWAMURA, M.YOSHIMURA, Y.MORI, T.SASAKI, Rob ARMITAGE, H.HIRAYAMA
    • Journal Title

      Jpn. J. Appl. Phys. 46

    • NAID

      10018867918

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Liquid Phase Epitaxy Growth of m-Plane GaN Substrate Using the Na Flux Method2007

    • Author(s)
      T.IWAHASHI, Y.KITAOKA, F.KAWAMURA, M.YOSHIMURA, Y.MORI, T.SASAKI, Rob ARMITAGE, H.HIRAYAMA
    • Journal Title

      Jpn. J. Appl. Phys. 46

    • NAID

      10018903184

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Fabrication of a-Plane GaN Substrate Using the Sr-Na Flux Liquid Phase Epitaxy Technique.2007

    • Author(s)
      Tomoya IWAHASHI, Yasuo KITAOKA, Minoru KAWAHARA, Fumio KAWAMURA, Masashi YOSHIMURA, Yusuke MORI, Takatomo SASAKI, Rob ARMITAGE, Hideki HIRAYAMA
    • Journal Title

      Jpn.J.Appl.Phys. 46, 4

    • NAID

      10018867918

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Liquid Phase Epitaxy Growth of m-Plane GaN Substrate Using the Na Flux Method.2007

    • Author(s)
      Tomoya IWAHASHI, Yasuo KITAOKA, Fumio KAWAMURA, Masashi YOSHIMURA, Yusuke MORI, Takatomo SASAKI, Rob ARMITAGE, Hideki HIRAYAMA
    • Journal Title

      Jpn.J.Appl.Phys. Vol.46 No.10

    • NAID

      10018903184

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Drastic decrease in dislocations during the LPE growth of GaN single crystals using Na flux method without any artificial processes.2006

    • Author(s)
      F.KAWAMURA, H.UMEDA, K.OMAE, M.KAWAHARA, M.YOSHIMURA, Y.MORI, T.SASAKI
    • Journal Title

      Jpn. J. Appl. Phys. 45

      Pages: 2528-2528

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Growth of a two-inch GaN single crystal substrate using the Na flux method.2006

    • Author(s)
      F.KAWAMURA, H.UMEDA, M.MORISHITA, M.KAWAHARA, M.YOSHIMURA, Y.MORI, T.SASAKI, Y.KITAOKA
    • Journal Title

      Jpn. J. Appl. Phys. 45

    • NAID

      10018632234

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Drastic decrease in dislocations during the LPE growth of GaN single crystals using Na flux method without any artificial processes.2006

    • Author(s)
      Fumio KAWAMURA, Hidekazu UMEDA, Kunimichi OMAE, Minoru KAWAHARA, Masashi YOSHIMURA, Yusuke MORI, Takatomo SASAKI
    • Journal Title

      Jpn.J.Appl.Phys. 45, 4A

      Pages: 2528-2528

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Growth of a two-inch GaN single crystal substrate using the Na flux method.2006

    • Author(s)
      Fumio KAWAMURA, Hidekazu UMEDA, Masanori MORISHITA, Minoru KAWAHARA, Masashi YOSHIMURA, Yusuke MORI, Takatomo SASAKI, Yasuo KITAOKA
    • Journal Title

      Jpn.J.Appl.Phys. 45, 43

    • NAID

      10018632234

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Drastic decrease in dislocations during the LPE growth of GaN single crystals using Na flux method without any artificial processes.2006

    • Author(s)
      Fumio Kawamura et al.
    • Journal Title

      Jpn. J. Appl. Phys. 45・4A

      Pages: 2528-2530

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Growth of a two-inch GaN single crystal substrate using the Na flux method.2006

    • Author(s)
      Fumio Kawamura et al.
    • Journal Title

      Jpn. J. Appl. Phys. 45・43

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Drastic decrease in dislocations during the LPE growth of GaN single crystals using Na flux method without any artificial processes.2006

    • Author(s)
      Fumio Kawamura et al.
    • Journal Title

      Jpn.J.Appl.Phys. Vol.45・No.4A(In Press)

    • Related Report
      2005 Annual Research Report
  • [Journal Article] The effects of Na and some additives on nitrogen dissolution in the Ga-Na system : - A growth mechanism of GaN in the Na flux method-2005

    • Author(s)
      F.KAWAMURA, M.MORISHITA, K.OMAE, M.YOSHIMURA, Y.MORI, T.SASAKI
    • Journal Title

      J. Mater. Sci., Mater. Electron 16

      Pages: 29-29

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] LPE法による大面積・透明GaN単結晶の育成2005

    • Author(s)
      川村史朗, 川原実, 森下昌紀, 梅田英和, 下條亮平, 吉村政志, 森勇介, 佐々木孝友
    • Journal Title

      日本結晶成長学会誌 32・1

      Pages: 3-3

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Synthesis of AlN grains and LPE growth of AlN films using Sn-Ca mixed flux2005

    • Author(s)
      H.Isobe, F.Kawamura, M.Kawahara, M.Yoshimura, Y.Mori, T.Sasaki
    • Journal Title

      Jpn. J. Appl. Phys. 44・16

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Systematic study on the growth of GaN single crystals using the Na based flux method.2005

    • Author(s)
      M.Kawahara, F.Kawamura, Y.Yamada, H.Umeda, M.Morishita, M.Yoshimura, Y.MORI, T.SASAKI
    • Journal Title

      Journal of Ceramic Processing Research 6・2

      Pages: 146-146

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Promoted nitrogen dissolution due to the addition of Li or Ca to Ga-Na melt; some effects of additives on the growth of GaN single crystals using sodium flux method.2005

    • Author(s)
      Masanori Morishita, Fumio Kawamura, Minoru Kawahara, Masashi Yoshimura, Yusuke Mori, Takatomo Sasaki
    • Journal Title

      J. Cryst. Growth 284

      Pages: 91-91

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] The effects of Na and some additives on nitrogen dissolution in the Ga-Na system : -A growth mechanism of GaN in the Na flux method-2005

    • Author(s)
      F.KAWAMURA, M.MORISHITA, K.OMAE, M.YOSHIMURA, Y.MORI, T.SASAKI
    • Journal Title

      J.Mater.Sci., Mater.Electron 16

      Pages: 29-29

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Growth of a large transparent GaN single crystal using liquid phase epitaxy2005

    • Author(s)
      Fumio KAWAMURA, Minoru KAWAHARA, Masanori MORISHITA, Hidekazu UMEDA, Ryohei GEJO, Masashi YOSHIMURA, Yusuke MORI, Takatomo SASAKI
    • Journal Title

      Journal of Japanese crystal growth 32, 1

      Pages: 3-3

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Synthesis of AlN grains and LPE growth of AlN films using Sn-Ca mixed flux2005

    • Author(s)
      Hiroaki Isobe, Fumio Kawamura, Minoru Kawahara, Masashi Yoshimura, Yusuke Mori, Takatomo Sasaki
    • Journal Title

      Jpn.J.Appl.Phys. 44, 16

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Systematic study on the growth of GaN single crystals using the Na based flux method.2005

    • Author(s)
      Minoru Kawahara, Fumio Kawamura, Yuji Yamada, Hidekazu Umeda, Masanori Morishita, Masashi Yoshimura, Yusuke MORI, Takatomo SASAKI
    • Journal Title

      Journal of Ceramic Processing Research 6, 2

      Pages: 146-146

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Promoted nitrogen dissolution due to the addition of Li or Ca to Ga-Na melt; some effects of additives on the growth of GaN single crystals using sodium flux method.2005

    • Author(s)
      Masanori Morishita, Fumio Kawamura, Minoru Kawahara, Masashi Yoshimura, Yusuke Mori, Takatomo Sasaki
    • Journal Title

      J.Cryst.Growth 284

      Pages: 91-91

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] The effects of Na and some additives on nitrogen dissolution in the Ga-Na system : -A growth mechanism of GaN in the Na flux method2005

    • Author(s)
      Fumio Kawamura et al.
    • Journal Title

      J.Mater.Sci. : Mater.Electron 16

      Pages: 29-34

    • Related Report
      2004 Annual Research Report
  • [Journal Article] LPE法による大面積・透明GaN単結晶の育成2005

    • Author(s)
      川村史朗 et al.
    • Journal Title

      日本結晶成長学会誌 (To be published)(in press)

    • Related Report
      2004 Annual Research Report
  • [Journal Article] The influences of supersaturation on LPE growth of GaN single crystals using Na flux method.2004

    • Author(s)
      Masanori Morishita et al.
    • Journal Title

      J.Crystal Growth 270

      Pages: 402-408

    • Related Report
      2004 Annual Research Report

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Published: 2004-04-01   Modified: 2016-04-21  

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