Development of bulk GaN single crystal substrate for high-power ultra-violet laser diodes
| Project/Area Number |
16206009
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (A)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Applied optics/Quantum optical engineering
|
|---|
| Research Institution | Osaka University |
|---|
Principal Investigator |
SASAKI Takatomo Osaka Univ., Graduate school of engineering, Professor, 大学院工学研究科, 教授 (50029237)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
MORI Yusuke Osaka Univ., Graduate school of engineering, Associate Professor, 大学院工学研究科, 助教授 (90252618)
YOSHIMURA Masashi Osaka Univ., Graduate school of engineering, Assistant Professor, 大学院工学研究科, 助手 (60314382)
川村 史朗 大阪大学, 工学研究科, 日本学術振興会特別研究員
北岡 康夫 松下電器産業(株), 先行デバイス開発センター, 主任研究員
|
|---|
| Project Period (FY) |
2004 – 2006
|
| Project Status |
Completed (Fiscal Year 2006)
|
| Budget Amount *help |
¥45,500,000 (Direct Cost: ¥35,000,000、Indirect Cost: ¥10,500,000)
Fiscal Year 2006: ¥9,750,000 (Direct Cost: ¥7,500,000、Indirect Cost: ¥2,250,000)
Fiscal Year 2005: ¥9,750,000 (Direct Cost: ¥7,500,000、Indirect Cost: ¥2,250,000)
Fiscal Year 2004: ¥26,000,000 (Direct Cost: ¥20,000,000、Indirect Cost: ¥6,000,000)
|
|---|
| Keywords | GaN single crystal / Na flux / low dislocation density / bulk / LPE / liquid phase epitaxy / LED / light emitting diode / GaN / 単結晶 / 基板 / フラックス法 / 発光デバイス / 半導体レーザー |
|---|
| Research Abstract |
In this research, we developed a full-fledged apparatus for the growth of a two-inch GaN single crystal substrate. The apparatus was designed based on the following points; 1.the electric furnace was set in a pressure-resistant chamber having a water cooling system for the growth at severe conditions, 2.the solution could be stirred by back and force the chamber. We succeeded in the growth of a two-inch GaN single crystal substrate with the dislocation density of 2.3 × 10^5 com^<-2> using this apparatus for the first time. In addition, the growth rate of 30 μm/h was achieved by optimizing the growth conditions while dislocation density was kept at 3 × 10^5 cm^<-2>.
Impurity concentration in the crystal was measured by the secondary ion mass spectrometer (SIMS). The Na content in the crystal was at an extremely low level of 4.2 × 10^<14> cm^<-3> and oxygen was slightly detected, which is enough low concentration for avoiding giving harmful affect on device performance.
Emission property of LED fabricated on GaN substrate grown by this method was improved in comparison to that fabricated on the other substrates such as sapphire and GaN grown by hydride vapor phase (HVPE) epitaxy method.
These results have been published in many scientific papers as shown on the attached paper and attracted great attention. As mentioned above, this research enabled to produce large-scaled GaN substrate with high quality.
|
Report
(4 results)
Research Products
(24 results)
