Phase transition of high-dielectric insulating films studied by extremely asymmetric X-ray diffraction and X-ray photoelectron spectroscopy
| Project/Area Number |
16340088
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Condensed matter physics I
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| Research Institution | Nagoya University |
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Principal Investigator |
AKIMOTO Koichi Nagoya University, Graduate School of Engineering, Associate Professor, 大学院工学研究科, 助教授 (40262852)
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| Co-Investigator(Kenkyū-buntansha) |
HIROSE Kazuyuki Japan Aerospace Exploration Agency, Institute of Space and Astronautical Science, Associate Professor, 宇宙科学研究本部, 助教授 (00280553)
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| Project Period (FY) |
2004 – 2006
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| Project Status |
Completed (Fiscal Year 2006)
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| Budget Amount *help |
¥16,100,000 (Direct Cost: ¥16,100,000)
Fiscal Year 2006: ¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 2005: ¥8,700,000 (Direct Cost: ¥8,700,000)
Fiscal Year 2004: ¥5,100,000 (Direct Cost: ¥5,100,000)
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| Keywords | Synchrotron radiation / High-k film / X-ray diffraction / Crystal structure / Phase transition / X-ray photoelectron spectroscopy |
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| Research Abstract |
We have studied the crystallization process of HfO_2 and HfAlOx films using grazing incidence X-ray diffraction (GIXRD) with synchrotron radiation. The HfO_2 and HfA1Ox films were grown by atomic layer deposition (ALD) on a chemical Si02 interfacial layer. X-ray diffraction (XRD) patterns of the HfO_2 film as-deposited contain not only the monoclinic phase but also the orthorhombic or tetragonal phase. With increasing annealing temperature, the orthorhombic or tetragonal phase decreases and disappears. The HfAlOx film crystallized after annealing at 900 ℃. The crystallographic phase was the cubic phase of CaF_2 type.
We studied the effect of post-deposition annealing on a HfO_2/Si interface of by extremely asymmetric X-ray diffraction. Comparing the rocking curves before annealing the sample with those of the annealed sample, it is found that an interfacial layer with a density of 3 g/cm^3 grows at the interface between the HfO_2 layer and the substrate during post-deposition annealing.
… More
The wavelength dependency of the integrated intensities of the rocking curve for the as-deposited sample fluctuated with the observation position. This fluctuation was suppressed by annealing. From these results we concluded that the strain introduced into the substrate becomes homogeneous by annealing. Moreover, a quantitative estimation of the strain by curve fitting reveals the existence of compressive strain under the HfO_2 layer.
We studied HfA10x(N)/SiO_2/Si films which were fabricated by the layer-by-layer deposition and annealing (LL-D＆A) method with different annealing conditions. In this time, in-situ annealing was performed at various temperatures in a NH_3 ambient. In addition, post-deposition annealing (PDA) was performed for some samples. For each sample, the interfacial lattice strain was evaluated using strain-sensitive X-ray diffraction and the local dielectric constant near the Al atoms was measured by X-ray photoelectron spectroscopy (XPS). Observation of the strain field was done by measuring the X-ray rocking curve of the Si 113 reflection of the Si (001) substrate under grazing incidence conditions. It was found that in the case of the samples without PDA, for higher in-situ annealing temperatures compressive strain is introduced and the local dielectric constant becomes lower. For the samples with PDA, the differences of the lattice strain and the local dielectric constant are small for different in-situ annealing temperatures. Less
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Report
(4 results)
Research Products
(19 results)
